GeneSiC Semiconductor Producten - Transistors - FET's, MOSFET's - Single

GA50JT06-258

GeneSiC Semiconductor

TRANS SJT 600V 100A

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 769W (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A
Operating Temperature: -55°C ~ 225°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-258
Package / Case: TO-258-3, TO-258AA

package: TO-258-3, TO-258AA

Voorraad4.272

SiC (Silicon Carbide Junction Transistor)

600V

100A (Tc)

-

769W (Tc)

25 mOhm @ 50A

-55°C ~ 225°C (TJ)

Through Hole

TO-258

TO-258-3, TO-258AA

2N7639-GA

GeneSiC Semiconductor

TRANS SJT 650V 15A TO-257

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc) (155°C)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 1534pF @ 35V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 105 mOhm @ 15A
Operating Temperature: -55°C ~ 225°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-257
Package / Case: TO-257-3

package: TO-257-3

Voorraad2.736

SiC (Silicon Carbide Junction Transistor)

650V

15A (Tc) (155°C)

-

1534pF @ 35V

-

172W (Tc)

105 mOhm @ 15A

-55°C ~ 225°C (TJ)

Through Hole

TO-257

TO-257-3

2N7640-GA

GeneSiC Semiconductor

TRANS SJT 650V 16A TO276

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (155°C)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 1534pF @ 35V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 105 mOhm @ 16A
Operating Temperature: -55°C ~ 225°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-276
Package / Case: TO-276AA

package: TO-276AA

Voorraad2.368

SiC (Silicon Carbide Junction Transistor)

650V

16A (Tc) (155°C)

-

1534pF @ 35V

-

330W (Tc)

105 mOhm @ 16A

-55°C ~ 225°C (TJ)

Surface Mount

TO-276

TO-276AA

2N7637-GA

GeneSiC Semiconductor

TRANS SJT 650V 7A TO-257

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 35V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 170 mOhm @ 7A
Operating Temperature: -55°C ~ 225°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-257
Package / Case: TO-257-3

package: TO-257-3

Voorraad3.536

SiC (Silicon Carbide Junction Transistor)

650V

7A (Tc) (165°C)

-

720pF @ 35V

-

80W (Tc)

170 mOhm @ 7A

-55°C ~ 225°C (TJ)

Through Hole

TO-257

TO-257-3

2N7638-GA

GeneSiC Semiconductor

TRANS SJT 650V 8A TO276

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (158°C)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 35V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 170 mOhm @ 8A
Operating Temperature: -55°C ~ 225°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-276
Package / Case: TO-276AA

package: TO-276AA

Voorraad5.328

SiC (Silicon Carbide Junction Transistor)

650V

8A (Tc) (158°C)

-

720pF @ 35V

-

200W (Tc)

170 mOhm @ 8A

-55°C ~ 225°C (TJ)

Surface Mount

TO-276

TO-276AA

2N7635-GA

GeneSiC Semiconductor

TRANS SJT 650V 4A TO-257

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 35V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A
Operating Temperature: -55°C ~ 225°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-257
Package / Case: TO-257-3

package: TO-257-3

Voorraad4.944

SiC (Silicon Carbide Junction Transistor)

650V

4A (Tc) (165°C)

-

324pF @ 35V

-

47W (Tc)

415 mOhm @ 4A

-55°C ~ 225°C (TJ)

Through Hole

TO-257

TO-257-3

2N7636-GA

GeneSiC Semiconductor

TRANS SJT 650V 4A TO276

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 35V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A
Operating Temperature: -55°C ~ 225°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-276
Package / Case: TO-276AA

package: TO-276AA

Voorraad6.816

SiC (Silicon Carbide Junction Transistor)

650V

4A (Tc) (165°C)

-

324pF @ 35V

-

125W (Tc)

415 mOhm @ 4A

-55°C ~ 225°C (TJ)

Surface Mount

TO-276

TO-276AA

GA50JT17-247

GeneSiC Semiconductor

TRANS SJT 1.7KV 100A

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 583W (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

package: TO-247-3

Voorraad6.864

SiC (Silicon Carbide Junction Transistor)

1700V

100A (Tc)

-

583W (Tc)

25 mOhm @ 50A

175°C (TJ)

Through Hole

TO-247

TO-247-3

GA50JT12-263

GeneSiC Semiconductor

TRANSISTOR 1200V 100A TO263-7

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

package: -

Voorraad3.024

-

GA16JT17-247

GeneSiC Semiconductor

TRANS SJT 1700V 16A TO-247AB

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (90°C)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 282W (Tc)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 16A
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AB
Package / Case: TO-247-3

package: TO-247-3

Voorraad2.896

SiC (Silicon Carbide Junction Transistor)

1700V

16A (Tc) (90°C)

-

282W (Tc)

110 mOhm @ 16A

175°C (TJ)

Through Hole

TO-247AB

TO-247-3

GA20SICP12-247

GeneSiC Semiconductor

TRANS SJT 1200V 45A TO247

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 3091pF @ 800V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 282W (Tc)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 20A
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AB
Package / Case: TO-247-3

package: TO-247-3

Voorraad3.184

SiC (Silicon Carbide Junction Transistor)

1200V

45A (Tc)

-

3091pF @ 800V

-

282W (Tc)

50 mOhm @ 20A

-55°C ~ 175°C (TJ)

Through Hole

TO-247AB

TO-247-3

GA20JT12-247

GeneSiC Semiconductor

TRANS SJT 1.2KV 20A

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 282W (Tc)
Rds On (Max) @ Id, Vgs: 70 mOhm @ 20A
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AB
Package / Case: TO-247-3

package: TO-247-3

Voorraad7.728

SiC (Silicon Carbide Junction Transistor)

1200V

20A (Tc)

-

282W (Tc)

70 mOhm @ 20A

175°C (TJ)

Through Hole

TO-247AB

TO-247-3

GA06JT12-247

GeneSiC Semiconductor

TRANS SJT 1200V 6A TO-247AB

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc) (90°C)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 220 mOhm @ 6A
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AB
Package / Case: TO-247-3

package: TO-247-3

Voorraad6.240

SiC (Silicon Carbide Junction Transistor)

1200V

6A (Tc) (90°C)

-

220 mOhm @ 6A

175°C (TJ)

Through Hole

TO-247AB

TO-247-3

GA05JT12-247

GeneSiC Semiconductor

TRANS SJT 1200V 5A

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 280 mOhm @ 5A
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AB
Package / Case: TO-247-3

package: TO-247-3

Voorraad4.432

SiC (Silicon Carbide Junction Transistor)

1200V

5A (Tc)

-

106W (Tc)

280 mOhm @ 5A

175°C (TJ)

Through Hole

TO-247AB

TO-247-3

GA10JT12-247

GeneSiC Semiconductor

TRANS SJT 1.2KV 10A

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 140 mOhm @ 10A
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AB
Package / Case: TO-247-3

package: TO-247-3

Voorraad3.248

SiC (Silicon Carbide Junction Transistor)

1200V

10A (Tc)

-

170W (Tc)

140 mOhm @ 10A

175°C (TJ)

Through Hole

TO-247AB

TO-247-3

GA100JT17-227

GeneSiC Semiconductor

TRANS SJT 1700V 160A SOT227

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 160A
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 800V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 535W (Tc)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 100A
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC

package: SOT-227-4, miniBLOC

Voorraad2.064

SiC (Silicon Carbide Junction Transistor)

1700V

160A

-

14400pF @ 800V

-

535W (Tc)

10 mOhm @ 100A

-55°C ~ 175°C (TJ)

Chassis Mount

SOT-227

SOT-227-4, miniBLOC

GA05JT03-46

GeneSiC Semiconductor

TRANS SJT 300V 9A

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 240 mOhm @ 5A
Operating Temperature: -55°C ~ 225°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-46
Package / Case: TO-46-3

package: TO-46-3

Voorraad6.768

SiC (Silicon Carbide Junction Transistor)

300V

9A (Tc)

-

20W (Tc)

240 mOhm @ 5A

-55°C ~ 225°C (TJ)

Through Hole

TO-46

TO-46-3

GA05JT01-46

GeneSiC Semiconductor

TRANS SJT 100V 9A

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 240 mOhm @ 5A
Operating Temperature: -55°C ~ 225°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-46
Package / Case: TO-46-3

package: TO-46-3

Voorraad6.804

SiC (Silicon Carbide Junction Transistor)

100V

9A (Tc)

-

20W (Tc)

240 mOhm @ 5A

-55°C ~ 225°C (TJ)

Through Hole

TO-46

TO-46-3

GA04JT17-247

GeneSiC Semiconductor

TRANS SJT 1700V 4A TO-247AB

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (95°C)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AB
Package / Case: TO-247-3

package: TO-247-3

Voorraad5.216

SiC (Silicon Carbide Junction Transistor)

1700V

4A (Tc) (95°C)

-

106W (Tc)

480 mOhm @ 4A

175°C (TJ)

Through Hole

TO-247AB

TO-247-3

GA100JT12-227

GeneSiC Semiconductor

TRANS SJT 1200V 160A SOT227

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 160A
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 800V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 535W (Tc)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 100A
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC

package: SOT-227-4, miniBLOC

Voorraad6.432

SiC (Silicon Carbide Junction Transistor)

1200V

160A

-

14400pF @ 800V

-

535W (Tc)

10 mOhm @ 100A

-55°C ~ 175°C (TJ)

Chassis Mount

SOT-227

SOT-227-4, miniBLOC

GA10SICP12-263

GeneSiC Semiconductor

TRANS SJT 1200V 25A TO263-7

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 1403pF @ 800V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (7-Lead)
Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Voorraad8.640

SiC (Silicon Carbide Junction Transistor)

1200V

25A (Tc)

-

1403pF @ 800V

-

170W (Tc)

100 mOhm @ 10A

175°C (TJ)

Surface Mount

D2PAK (7-Lead)

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

GA10JT12-263

GeneSiC Semiconductor

TRANS SJT 1200V 25A

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 1403pF @ 800V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 120 mOhm @ 10A
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: -
Package / Case: -

package: -

Voorraad18.264

SiC (Silicon Carbide Junction Transistor)

1200V

25A (Tc)

-

1403pF @ 800V

-

170W (Tc)

120 mOhm @ 10A

175°C (TJ)

Surface Mount

-

GA05JT12-263

GeneSiC Semiconductor

TRANS SJT 1200V 15A

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: 175°C (TJ)
Mounting Type: -
Supplier Device Package: -
Package / Case: -

package: -

Voorraad21.036

SiC (Silicon Carbide Junction Transistor)

1200V

15A (Tc)

-

106W (Tc)

-

175°C (TJ)

-

GA08JT17-247

GeneSiC Semiconductor

TRANS SJT 1700V 8A TO-247AB

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 250 mOhm @ 8A
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AB
Package / Case: TO-247-3

package: TO-247-3

Voorraad19.104

SiC (Silicon Carbide Junction Transistor)

1700V

8A (Tc) (90°C)

-

48W (Tc)

250 mOhm @ 8A

175°C (TJ)

Through Hole

TO-247AB

TO-247-3

GA20JT12-263

GeneSiC Semiconductor

TRANS SJT 1200V 45A

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 3091pF @ 800V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 282W (Tc)
Rds On (Max) @ Id, Vgs: 60 mOhm @ 20A
Operating Temperature: 175°C (TJ)
Mounting Type: -
Supplier Device Package: -
Package / Case: -

package: -

Voorraad7.776

SiC (Silicon Carbide Junction Transistor)

1200V

45A (Tc)

-

3091pF @ 800V

-

282W (Tc)

60 mOhm @ 20A

175°C (TJ)

-

GA03JT12-247

GeneSiC Semiconductor

TRANS SJT 1200V 3A TO-247AB

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc) (95°C)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 460 mOhm @ 3A
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AB
Package / Case: TO-247-3

package: TO-247-3

Voorraad7.620

SiC (Silicon Carbide Junction Transistor)

1200V

3A (Tc) (95°C)

-

15W (Tc)

460 mOhm @ 3A

175°C (TJ)

Through Hole

TO-247AB

TO-247-3

GA50JT12-247

GeneSiC Semiconductor

TRANS SJT 1.2KV 50A

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 7209pF @ 800V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 583W (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AB
Package / Case: TO-247-3

package: TO-247-3

Voorraad6.160

SiC (Silicon Carbide Junction Transistor)

1200V

100A (Tc)

-

7209pF @ 800V

-

583W (Tc)

25 mOhm @ 50A

175°C (TJ)

Through Hole

TO-247AB

TO-247-3

Onderdeelnummer	Fabrikant	Omschrijving	package	Voorraad	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
GA50JT06-258	GeneSiC Semiconductor	TRANS SJT 600V 100A FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 769W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A Operating Temperature: -55°C ~ 225°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-258 Package / Case: TO-258-3, TO-258AA	package: TO-258-3, TO-258AA	Voorraad4.272	SiC (Silicon Carbide Junction Transistor)	600V	100A (Tc)	-	-	-	-	-	-	769W (Tc)	25 mOhm @ 50A	-55°C ~ 225°C (TJ)	Through Hole	TO-258	TO-258-3, TO-258AA
2N7639-GA	GeneSiC Semiconductor	TRANS SJT 650V 15A TO-257 FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) (155°C) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1534pF @ 35V Vgs (Max): - FET Feature: - Power Dissipation (Max): 172W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 15A Operating Temperature: -55°C ~ 225°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-257 Package / Case: TO-257-3	package: TO-257-3	Voorraad2.736	SiC (Silicon Carbide Junction Transistor)	650V	15A (Tc) (155°C)	-	-	-	1534pF @ 35V	-	-	172W (Tc)	105 mOhm @ 15A	-55°C ~ 225°C (TJ)	Through Hole	TO-257	TO-257-3
2N7640-GA	GeneSiC Semiconductor	TRANS SJT 650V 16A TO276 FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (155°C) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1534pF @ 35V Vgs (Max): - FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 16A Operating Temperature: -55°C ~ 225°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-276 Package / Case: TO-276AA	package: TO-276AA	Voorraad2.368	SiC (Silicon Carbide Junction Transistor)	650V	16A (Tc) (155°C)	-	-	-	1534pF @ 35V	-	-	330W (Tc)	105 mOhm @ 16A	-55°C ~ 225°C (TJ)	Surface Mount	TO-276	TO-276AA
2N7637-GA	GeneSiC Semiconductor	TRANS SJT 650V 7A TO-257 FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) (165°C) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 35V Vgs (Max): - FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 7A Operating Temperature: -55°C ~ 225°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-257 Package / Case: TO-257-3	package: TO-257-3	Voorraad3.536	SiC (Silicon Carbide Junction Transistor)	650V	7A (Tc) (165°C)	-	-	-	720pF @ 35V	-	-	80W (Tc)	170 mOhm @ 7A	-55°C ~ 225°C (TJ)	Through Hole	TO-257	TO-257-3
2N7638-GA	GeneSiC Semiconductor	TRANS SJT 650V 8A TO276 FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (158°C) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 35V Vgs (Max): - FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 8A Operating Temperature: -55°C ~ 225°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-276 Package / Case: TO-276AA	package: TO-276AA	Voorraad5.328	SiC (Silicon Carbide Junction Transistor)	650V	8A (Tc) (158°C)	-	-	-	720pF @ 35V	-	-	200W (Tc)	170 mOhm @ 8A	-55°C ~ 225°C (TJ)	Surface Mount	TO-276	TO-276AA
2N7635-GA	GeneSiC Semiconductor	TRANS SJT 650V 4A TO-257 FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 35V Vgs (Max): - FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A Operating Temperature: -55°C ~ 225°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-257 Package / Case: TO-257-3	package: TO-257-3	Voorraad4.944	SiC (Silicon Carbide Junction Transistor)	650V	4A (Tc) (165°C)	-	-	-	324pF @ 35V	-	-	47W (Tc)	415 mOhm @ 4A	-55°C ~ 225°C (TJ)	Through Hole	TO-257	TO-257-3
2N7636-GA	GeneSiC Semiconductor	TRANS SJT 650V 4A TO276 FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 35V Vgs (Max): - FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A Operating Temperature: -55°C ~ 225°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-276 Package / Case: TO-276AA	package: TO-276AA	Voorraad6.816	SiC (Silicon Carbide Junction Transistor)	650V	4A (Tc) (165°C)	-	-	-	324pF @ 35V	-	-	125W (Tc)	415 mOhm @ 4A	-55°C ~ 225°C (TJ)	Surface Mount	TO-276	TO-276AA
GA50JT17-247	GeneSiC Semiconductor	TRANS SJT 1.7KV 100A FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 583W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	package: TO-247-3	Voorraad6.864	SiC (Silicon Carbide Junction Transistor)	1700V	100A (Tc)	-	-	-	-	-	-	583W (Tc)	25 mOhm @ 50A	175°C (TJ)	Through Hole	TO-247	TO-247-3
GA50JT12-263	GeneSiC Semiconductor	TRANSISTOR 1200V 100A TO263-7 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	package: -	Voorraad3.024	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GA16JT17-247	GeneSiC Semiconductor	TRANS SJT 1700V 16A TO-247AB FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (90°C) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 282W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 16A Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	package: TO-247-3	Voorraad2.896	SiC (Silicon Carbide Junction Transistor)	1700V	16A (Tc) (90°C)	-	-	-	-	-	-	282W (Tc)	110 mOhm @ 16A	175°C (TJ)	Through Hole	TO-247AB	TO-247-3
GA20SICP12-247	GeneSiC Semiconductor	TRANS SJT 1200V 45A TO247 FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3091pF @ 800V Vgs (Max): - FET Feature: - Power Dissipation (Max): 282W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 20A Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	package: TO-247-3	Voorraad3.184	SiC (Silicon Carbide Junction Transistor)	1200V	45A (Tc)	-	-	-	3091pF @ 800V	-	-	282W (Tc)	50 mOhm @ 20A	-55°C ~ 175°C (TJ)	Through Hole	TO-247AB	TO-247-3
GA20JT12-247	GeneSiC Semiconductor	TRANS SJT 1.2KV 20A FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 282W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 20A Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	package: TO-247-3	Voorraad7.728	SiC (Silicon Carbide Junction Transistor)	1200V	20A (Tc)	-	-	-	-	-	-	282W (Tc)	70 mOhm @ 20A	175°C (TJ)	Through Hole	TO-247AB	TO-247-3
GA06JT12-247	GeneSiC Semiconductor	TRANS SJT 1200V 6A TO-247AB FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) (90°C) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 220 mOhm @ 6A Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	package: TO-247-3	Voorraad6.240	SiC (Silicon Carbide Junction Transistor)	1200V	6A (Tc) (90°C)	-	-	-	-	-	-	-	220 mOhm @ 6A	175°C (TJ)	Through Hole	TO-247AB	TO-247-3
GA05JT12-247	GeneSiC Semiconductor	TRANS SJT 1200V 5A FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 5A Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	package: TO-247-3	Voorraad4.432	SiC (Silicon Carbide Junction Transistor)	1200V	5A (Tc)	-	-	-	-	-	-	106W (Tc)	280 mOhm @ 5A	175°C (TJ)	Through Hole	TO-247AB	TO-247-3
GA10JT12-247	GeneSiC Semiconductor	TRANS SJT 1.2KV 10A FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 10A Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	package: TO-247-3	Voorraad3.248	SiC (Silicon Carbide Junction Transistor)	1200V	10A (Tc)	-	-	-	-	-	-	170W (Tc)	140 mOhm @ 10A	175°C (TJ)	Through Hole	TO-247AB	TO-247-3
GA100JT17-227	GeneSiC Semiconductor	TRANS SJT 1700V 160A SOT227 FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 160A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 800V Vgs (Max): - FET Feature: - Power Dissipation (Max): 535W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 100A Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	package: SOT-227-4, miniBLOC	Voorraad2.064	SiC (Silicon Carbide Junction Transistor)	1700V	160A	-	-	-	14400pF @ 800V	-	-	535W (Tc)	10 mOhm @ 100A	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
GA05JT03-46	GeneSiC Semiconductor	TRANS SJT 300V 9A FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 5A Operating Temperature: -55°C ~ 225°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-46 Package / Case: TO-46-3	package: TO-46-3	Voorraad6.768	SiC (Silicon Carbide Junction Transistor)	300V	9A (Tc)	-	-	-	-	-	-	20W (Tc)	240 mOhm @ 5A	-55°C ~ 225°C (TJ)	Through Hole	TO-46	TO-46-3
GA05JT01-46	GeneSiC Semiconductor	TRANS SJT 100V 9A FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 5A Operating Temperature: -55°C ~ 225°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-46 Package / Case: TO-46-3	package: TO-46-3	Voorraad6.804	SiC (Silicon Carbide Junction Transistor)	100V	9A (Tc)	-	-	-	-	-	-	20W (Tc)	240 mOhm @ 5A	-55°C ~ 225°C (TJ)	Through Hole	TO-46	TO-46-3
GA04JT17-247	GeneSiC Semiconductor	TRANS SJT 1700V 4A TO-247AB FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (95°C) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	package: TO-247-3	Voorraad5.216	SiC (Silicon Carbide Junction Transistor)	1700V	4A (Tc) (95°C)	-	-	-	-	-	-	106W (Tc)	480 mOhm @ 4A	175°C (TJ)	Through Hole	TO-247AB	TO-247-3
GA100JT12-227	GeneSiC Semiconductor	TRANS SJT 1200V 160A SOT227 FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 160A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 800V Vgs (Max): - FET Feature: - Power Dissipation (Max): 535W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 100A Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	package: SOT-227-4, miniBLOC	Voorraad6.432	SiC (Silicon Carbide Junction Transistor)	1200V	160A	-	-	-	14400pF @ 800V	-	-	535W (Tc)	10 mOhm @ 100A	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
GA10SICP12-263	GeneSiC Semiconductor	TRANS SJT 1200V 25A TO263-7 FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1403pF @ 800V Vgs (Max): - FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Voorraad8.640	SiC (Silicon Carbide Junction Transistor)	1200V	25A (Tc)	-	-	-	1403pF @ 800V	-	-	170W (Tc)	100 mOhm @ 10A	175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
GA10JT12-263	GeneSiC Semiconductor	TRANS SJT 1200V 25A FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1403pF @ 800V Vgs (Max): - FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 10A Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: -	package: -	Voorraad18.264	SiC (Silicon Carbide Junction Transistor)	1200V	25A (Tc)	-	-	-	1403pF @ 800V	-	-	170W (Tc)	120 mOhm @ 10A	175°C (TJ)	Surface Mount	-	-
GA05JT12-263	GeneSiC Semiconductor	TRANS SJT 1200V 15A FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 175°C (TJ) Mounting Type: - Supplier Device Package: - Package / Case: -	package: -	Voorraad21.036	SiC (Silicon Carbide Junction Transistor)	1200V	15A (Tc)	-	-	-	-	-	-	106W (Tc)	-	175°C (TJ)	-	-	-
GA08JT17-247	GeneSiC Semiconductor	TRANS SJT 1700V 8A TO-247AB FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 8A Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	package: TO-247-3	Voorraad19.104	SiC (Silicon Carbide Junction Transistor)	1700V	8A (Tc) (90°C)	-	-	-	-	-	-	48W (Tc)	250 mOhm @ 8A	175°C (TJ)	Through Hole	TO-247AB	TO-247-3
GA20JT12-263	GeneSiC Semiconductor	TRANS SJT 1200V 45A FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3091pF @ 800V Vgs (Max): - FET Feature: - Power Dissipation (Max): 282W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 20A Operating Temperature: 175°C (TJ) Mounting Type: - Supplier Device Package: - Package / Case: -	package: -	Voorraad7.776	SiC (Silicon Carbide Junction Transistor)	1200V	45A (Tc)	-	-	-	3091pF @ 800V	-	-	282W (Tc)	60 mOhm @ 20A	175°C (TJ)	-	-	-
GA03JT12-247	GeneSiC Semiconductor	TRANS SJT 1200V 3A TO-247AB FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) (95°C) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 460 mOhm @ 3A Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	package: TO-247-3	Voorraad7.620	SiC (Silicon Carbide Junction Transistor)	1200V	3A (Tc) (95°C)	-	-	-	-	-	-	15W (Tc)	460 mOhm @ 3A	175°C (TJ)	Through Hole	TO-247AB	TO-247-3
GA50JT12-247	GeneSiC Semiconductor	TRANS SJT 1.2KV 50A FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7209pF @ 800V Vgs (Max): - FET Feature: - Power Dissipation (Max): 583W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	package: TO-247-3	Voorraad6.160	SiC (Silicon Carbide Junction Transistor)	1200V	100A (Tc)	-	-	-	7209pF @ 800V	-	-	583W (Tc)	25 mOhm @ 50A	175°C (TJ)	Through Hole	TO-247AB	TO-247-3