Cree/Wolfspeed Producten

CPMF-1200-S160B

Cree/Wolfspeed

MOSFET N-CH SICFET 1200V 28A DIE

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 28A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 928pF @ 800V
• Vgs (Max): +25V, -5V
• FET Feature: -
• Power Dissipation (Max): 202W (Tj)
• Rds On (Max) @ Id, Vgs: 220 mOhm @ 10A, 20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

package: Die

C2M1000170J-TR

Cree/Wolfspeed

MOSFET N-CH 1700V 5.3A TO247

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1700V
• Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 78W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK-7
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

C3M0280090J-TR

Cree/Wolfspeed

MOSFET N-CH 900V 11A

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
• Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
• Vgs (Max): +18V, -8V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK-7
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

CRF24010FE

Cree/Wolfspeed

FET RF 120V 1.95GHZ 440166

• Transistor Type: Silicon Carbide MESFET
• Frequency: 1.95GHz
• Gain: 15dB
• Voltage - Test: 48V
• Current Rating: 1.8A
• Noise Figure: 3.1dB
• Current - Test: 500mA
• Power - Output: 12W
• Voltage - Rated: 120V
• Package / Case: 440166
• Supplier Device Package: 440166

package: 440166

CGHV59070F

Cree/Wolfspeed

RF MOSFET HEMT 50V 440224

• Transistor Type: HEMT
• Frequency: 4.4GHz ~ 5.9GHz
• Gain: 13.3dB
• Voltage - Test: 50V
• Current Rating: -
• Noise Figure: -
• Current - Test: 150mA
• Power - Output: 76W
• Voltage - Rated: 150V
• Package / Case: 440224
• Supplier Device Package: 440224

package: 440224

CGHV60170D

Cree/Wolfspeed

RF MOSFET HEMT 50V DIE

• Transistor Type: HEMT
• Frequency: 6GHz
• Gain: 17dB
• Voltage - Test: 50V
• Current Rating: -
• Noise Figure: -
• Current - Test: 260mA
• Power - Output: 170W
• Voltage - Rated: 150V
• Package / Case: Die
• Supplier Device Package: Die

package: Die

CGH40180PP

Cree/Wolfspeed

FET RF 84V 2.5GHZ 440199

• Transistor Type: HEMT
• Frequency: 0Hz ~ 2.5GHz
• Gain: 19dB
• Voltage - Test: 28V
• Current Rating: 56A
• Noise Figure: -
• Current - Test: 2A
• Power - Output: 220W
• Voltage - Rated: 84V
• Package / Case: 440199
• Supplier Device Package: 440199

package: 440199

CGH40045F

Cree/Wolfspeed

FET RF 84V 4GHZ 440193

• Transistor Type: HEMT
• Frequency: 0Hz ~ 4GHz
• Gain: 14dB
• Voltage - Test: 28V
• Current Rating: 14A
• Noise Figure: -
• Current - Test: 400mA
• Power - Output: 55W
• Voltage - Rated: 84V
• Package / Case: 440193
• Supplier Device Package: 440193

package: 440193

CGH27060F

Cree/Wolfspeed

RF MOSFET HEMT 28V 440193

• Transistor Type: HEMT
• Frequency: 3GHz
• Gain: 13dB
• Voltage - Test: 28V
• Current Rating: -
• Noise Figure: -
• Current - Test: 300mA
• Power - Output: 60W
• Voltage - Rated: 84V
• Package / Case: 440193
• Supplier Device Package: 440193

package: 440193

CGH40035F

Cree/Wolfspeed

FET RF 84V 4GHZ 440193

• Transistor Type: HEMT
• Frequency: 0Hz ~ 4GHz
• Gain: 14dB
• Voltage - Test: 28V
• Current Rating: 10.5A
• Noise Figure: -
• Current - Test: 500mA
• Power - Output: 45W
• Voltage - Rated: 84V
• Package / Case: 440193
• Supplier Device Package: 440193

package: 440193

CGHV1J070D-GP4

Cree/Wolfspeed

RF MOSFET HEMT 40V DIE

• Transistor Type: HEMT
• Frequency: 18GHz
• Gain: 17dB
• Voltage - Test: 40V
• Current Rating: -
• Noise Figure: -
• Current - Test: 360mA
• Power - Output: 70W
• Voltage - Rated: 100V
• Package / Case: Die
• Supplier Device Package: Die

package: Die

CAS120M12BM2

Cree/Wolfspeed

MOSFET 2N-CH 1200V 193A MODULE

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 193A
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 120A, 20V
• Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 1000V
• Power - Max: 925W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

package: Module

CSD06060G

Cree/Wolfspeed

DIODE SCHOTTKY 600V 10A TO263-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Capacitance @ Vr, F: 340pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263-2
• Operating Temperature - Junction: -55°C ~ 175°C

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

CSD04060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 7A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 7A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Capacitance @ Vr, F: 220pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

package: TO-220-2

C4D10120E

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 10A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 250µA @ 1200V
• Capacitance @ Vr, F: 754pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

package: TO-252-3, DPak (2 Leads + Tab), SC-63

C3D06060G

Cree/Wolfspeed

DIODE SCHOTTKY 600V 6A TO263-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 6A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 295pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263-2
• Operating Temperature - Junction: -55°C ~ 175°C

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

C3D03060F

Cree/Wolfspeed

DIODE SCHOTTKY 600V 3A TO220-F2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 155pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: TO-220-F2
• Operating Temperature - Junction: -55°C ~ 175°C

package: TO-220-2 Full Pack, Isolated Tab

C3D02060F

Cree/Wolfspeed

DIODE SCHOTTKY 600V 4A TO220-F2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 4A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 120pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: TO-220-F2
• Operating Temperature - Junction: -55°C ~ 175°C

package: TO-220-2 Full Pack, Isolated Tab

CSD01060E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 600V 1A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Capacitance @ Vr, F: 80pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

package: TO-252-3, DPak (2 Leads + Tab), SC-63

C3D06065A

Cree/Wolfspeed

DIODE SCHOTTKY 650V 6A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 6A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 60µA @ 650V
• Capacitance @ Vr, F: 294pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

package: TO-220-2

C2D10120A

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 10A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Capacitance @ Vr, F: 1000pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

package: TO-220-2

CMPA601C025F-TB

Cree/Wolfspeed

EVAL BOARD FOR CMPA601C025F

• Type: Amplifier
• Frequency: 6GHz ~ 12GHz
• For Use With/Related Products: CMPA601C025F
• Supplied Contents: Partially Populated Board - Main IC Not Included

package: -

CGHV22100-TB

Cree/Wolfspeed

EVAL BOARD FOR CGHV22100

• Type: HEMT
• Frequency: 1.8GHz ~ 2.2GHz
• For Use With/Related Products: CGHV22100
• Supplied Contents: Partially Populated Board - Main IC Not Included

package: -

CGHV50200F-AMP

Cree/Wolfspeed

EVAL BOARD FOR CGHV50200

• Type: HEMT
• Frequency: 4.4GHz ~ 5GHz
• For Use With/Related Products: CGHV50200
• Supplied Contents: Board

package: -

CGHV35400F-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV35400F

• Type: FET
• Frequency: 2.9GHz ~ 3.5GHz
• For Use With/Related Products: CGHV35400
• Supplied Contents: Partially Populated Board - Main IC Not Included

package: -

CGHV35150-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV35150F

• Type: FET
• Frequency: 2.9GHz ~ 3.5GHz
• For Use With/Related Products: CGHV35150
• Supplied Contents: Partially Populated Board - Main IC Not Included

package: -

CGHV14250F-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV14250

• Type: FET
• Frequency: 1.2GHz ~ 1.4GHz
• For Use With/Related Products: CGHV14250
• Supplied Contents: Partially Populated Board - Main IC Not Included

package: -

CMPA2560025F

Cree/Wolfspeed

IC AMP GAN HEMT MMIC 780019

• Frequency: 2.5GHz ~ 6GHz
• P1dB: -
• Gain: 24dB
• Noise Figure: -
• RF Type: -
• Voltage - Supply: 6 V ~ 28 V
• Current - Supply: 20mA ~ 10A
• Test Frequency: 2.5GHz ~ 6GHz
• Package / Case: 780019
• Supplier Device Package: 780019

package: 780019

CMPA801B025F

Cree/Wolfspeed

IC AMP GAN HEMT MMIC 440208

• Frequency: 8.5GHz ~ 11GHz
• P1dB: -
• Gain: 24dB
• Noise Figure: -
• RF Type: -
• Voltage - Supply: -
• Current - Supply: -
• Test Frequency: -
• Package / Case: 440208
• Supplier Device Package: 440208

package: 440208

CMPA0060002F

Cree/Wolfspeed

IC AMP GAN HEMT MMIC 780019

• Frequency: 20MHz ~ 6GHz
• P1dB: -
• Gain: 18.8dB
• Noise Figure: -
• RF Type: -
• Voltage - Supply: 2 V ~ 28 V
• Current - Supply: -
• Test Frequency: 500MHz
• Package / Case: 780019
• Supplier Device Package: 780019

package: 780019