Pagina 1563 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  1.563/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
ESH3CHE3/9AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-214AB, SMC
Voorraad5.360
150V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
5µA @ 150V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 175°C
hot 10TQ040
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 10A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 760mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 6mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-220-2
Voorraad6.928
40V
10A
760mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
6mA @ 40V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
A399PE
Powerex Inc.

DIODE FAST 400A 1500V DO-200AA

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad3.328
-
-
-
-
-
-
-
-
-
-
-
VS-50PF120W
Vishay Semiconductor Diodes Division

DIODE STD REC 1200V 50A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 125A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -55°C ~ 180°C
package: DO-203AB, DO-5, Stud
Voorraad4.208
1200V
50A
1.4V @ 125A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Stud Mount
DO-203AB, DO-5, Stud
DO-203AB (DO-5)
-55°C ~ 180°C
RM 2
Sanken

DIODE GEN PURP 400V 1.2A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 910mV @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -40°C ~ 150°C
package: Axial
Voorraad3.072
400V
1.2A
910mV @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Through Hole
Axial
Axial
-40°C ~ 150°C
ES 1V
Sanken

DIODE GEN PURP 400V 700MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 700mA
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 800mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
package: Axial
Voorraad6.464
400V
700mA
2.5V @ 800mA
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 400V
-
Through Hole
Axial
-
-40°C ~ 150°C
S3ABHM4G
TSC America Inc.

DIODE, 3A, 50V, AEC-Q101, DO-214

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AA, SMB
Voorraad7.152
50V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 50V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
UF4007HR1G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 1000V

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-204AL, DO-41, Axial
Voorraad6.480
-
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
2A06G R0G
TSC America Inc.

DIODE, 2A, 800V, DO-15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-204AC, DO-15, Axial
Voorraad5.536
800V
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SL13TR
SMC Diode Solutions

DIODE SCHOTTKY 30V 1A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 380mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -65°C ~ 125°C
package: DO-214AC, SMA
Voorraad5.488
30V
1A
380mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-65°C ~ 125°C
V35PW45HM3/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 35A SLIMDPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2.5mA @ 45V
  • Capacitance @ Vr, F: 4230pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -40°C ~ 150°C
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad7.232
45V
35A
620mV @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
-
2.5mA @ 45V
4230pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
SlimDPAK
-40°C ~ 150°C
hot SS2H10-E3/5BT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 2A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 790mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-214AA, SMB
Voorraad192.000
100V
2A
790mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 100V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 175°C
IDH10G120C5XKSA1
Infineon Technologies

DIODE SCHOTTKY 1200V 10A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 62µA @ 1200V
  • Capacitance @ Vr, F: 525pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
package: TO-220-2
Voorraad15.888
1200V
10A (DC)
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
62µA @ 1200V
525pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
PMEG2010EH,115
Nexperia USA Inc.

DIODE SCHOTTKY 20V 1A SOD123F

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 20V
  • Capacitance @ Vr, F: 80pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: 150°C (Max)
package: SOD-123F
Voorraad237.960
20V
1A (DC)
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 20V
80pF @ 1V, 1MHz
Surface Mount
SOD-123F
SOD-123F
150°C (Max)
1N5820G
ON Semiconductor

DIODE SCHOTTKY 20V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 125°C
package: DO-201AA, DO-27, Axial
Voorraad21.792
20V
3A
475mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 20V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 125°C
hot MUR160RLG
ON Semiconductor

DIODE GEN PURP 600V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-204AL, DO-41, Axial
Voorraad2.135.208
600V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 175°C
1N5817-T
Diodes Incorporated

DIODE SCHOTTKY 20V 1A DO41

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 125°C
package: DO-204AL, DO-41, Axial
Voorraad233.334
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 125°C
UFR72100
Microchip Technology

DIODE GEN PURP 1KV 70A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 70 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
  • Capacitance @ Vr, F: 150pF @ 10V, 1MHz
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
1000 V
70A
1.35 V @ 70 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
25 µA @ 1000 V
150pF @ 10V, 1MHz
Stud Mount
DO-203AB, DO-5, Stud
DO-203AB (DO-5)
-65°C ~ 175°C
RB520S-30T9TE61
Rohm Semiconductor

DIODE SCHOTTKY SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SR805-AP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 50 V
  • Capacitance @ Vr, F: 380pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 125°C
package: -
Request a Quote
50 V
8A
700 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 50 V
380pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
W6672TE350
IXYS

DIODE GEN PURP 1.9KV 6672A -

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1900 V
  • Current - Average Rectified (Io): 6672A
  • Voltage - Forward (Vf) (Max) @ If: 1.37 V @ 5000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 52 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 1900 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: TO-200AF
  • Supplier Device Package: TO-200AF
  • Operating Temperature - Junction: -40°C ~ 160°C
package: -
Request a Quote
1900 V
6672A
1.37 V @ 5000 A
Standard Recovery >500ns, > 200mA (Io)
52 µs
100 mA @ 1900 V
-
Chassis Mount
TO-200AF
TO-200AF
-40°C ~ 160°C
SS22-LTP
Micro Commercial Co

DIODE SCHOTTKY 20V 2A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 20 V
  • Capacitance @ Vr, F: 230pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 125°C
package: -
Voorraad15.000
20 V
2A
550 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 20 V
230pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
D452N18EVFXPSA1
Infineon Technologies

DIODE GEN PURP 1.8KV 450A FL54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 450A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Screw Mount
  • Package / Case: Nonstandard
  • Supplier Device Package: FL54
  • Operating Temperature - Junction: -40°C ~ 180°C
package: -
Request a Quote
1800 V
450A
-
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 1800 V
-
Screw Mount
Nonstandard
FL54
-40°C ~ 180°C
PCDP1665G1_T0_00001
Panjit International Inc.

DIODE SIL CARB 650V 16A TO220AC

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 650 V
  • Capacitance @ Vr, F: 618pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad12.000
650 V
16A
1.7 V @ 16 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 650 V
618pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
NXPSC086506Q
WeEn Semiconductors

DIODE SIL CARB 650V 8A TO220AC

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 230 µA @ 650 V
  • Capacitance @ Vr, F: 260pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 175°C (Max)
package: -
Voorraad9.000
650 V
8A
1.7 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
230 µA @ 650 V
260pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
175°C (Max)
HS1AL
Taiwan Semiconductor Corporation

50NS, 1A, 50V, HIGH EFFICIENT RE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad60.000
50 V
1A
950 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 50 V
20pF @ 4V, 1MHz
Surface Mount
SOD-123
Sub SMA
-55°C ~ 150°C
VS-90EPS12L-M3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 90A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 90A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 90 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
package: -
Voorraad7.557
1200 V
90A
1.2 V @ 90 A
Standard Recovery >500ns, > 200mA (Io)
-
100 µA @ 1200 V
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
SF31-AP
Micro Commercial Co

DIODE GEN PURP 50V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 125°C
package: -
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50 V
3A
950 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 50 V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C