Pagina 293 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten

Onderdeelnummer	Fabrikant	Omschrijving	package	Voorraad	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
E0714D	Diodes Incorporated	DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	package: -	Voorraad3.152	-	-	-	-	-	-	-	-	-	-	-
VS-SDE270M12MPBF	Vishay Semiconductor Diodes Division	MOD DIODE MAP COMPRESSED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	package: -	Voorraad3.504	-	-	-	-	-	-	-	-	-	-	-
CDBMH230-HF	Comchip Technology	DIODE SCHOTTKY 30V 2A SOD123T Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123T Supplier Device Package: SOD-123T Operating Temperature - Junction: -55°C ~ 125°C	package: SOD-123T	Voorraad5.520	30V	2A (DC)	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	160pF @ 4V, 1MHz	Surface Mount	SOD-123T	SOD-123T	-55°C ~ 125°C
GP20G-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 2A GP20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C	package: DO-201AA, DO-27, Axial	Voorraad5.552	400V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	5µs	5µA @ 400V	-	Through Hole	DO-201AA, DO-27, Axial	GP20	-65°C ~ 150°C
MR752RL	ON Semiconductor	DIODE GP 200V 6A MICRODE BUTTON Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Button, Axial Supplier Device Package: Microde Button Operating Temperature - Junction: -65°C ~ 175°C	package: Button, Axial	Voorraad6.288	200V	6A	900mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	25µA @ 200V	-	Through Hole	Button, Axial	Microde Button	-65°C ~ 175°C
30WQ03FN	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 3.5A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Operating Temperature - Junction: -40°C ~ 150°C	package: TO-252-3, DPak (2 Leads + Tab), SC-63	Voorraad555.312	30V	3.5A	450mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 30V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	-40°C ~ 150°C
MS108/TR8	Microsemi Corporation	DIODE SCHOTTKY 80V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 810mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 80V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 175°C	package: DO-204AL, DO-41, Axial	Voorraad5.872	80V	1A	810mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 80V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
FESB16ATHE3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 16A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 975mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Voorraad5.616	50V	16A	975mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	175pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
VS-6TQ045S-M3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 6A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 600mV @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 45V Capacitance @ Vr, F: 400pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C	package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Voorraad5.008	45V	6A	600mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 45V	400pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-55°C ~ 175°C
VS-4ECU06-M3/9AT	Vishay Semiconductor Diodes Division	DIODE FRED 600V 4A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 41ns Current - Reverse Leakage @ Vr: 3µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 175°C	package: DO-214AB, SMC	Voorraad6.704	600V	4A	1.3V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	41ns	3µA @ 600V	-	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 175°C
NSVR0320XV6T1G	ON Semiconductor	DIODE SCHOTTKY 23V 1A SOT563 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 23V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 270mV @ 10mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 15V Capacitance @ Vr, F: 35pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563-6 Operating Temperature - Junction: -55°C ~ 150°C	package: SOT-563, SOT-666	Voorraad3.904	23V	1A (DC)	270mV @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 15V	35pF @ 5V, 1MHz	Surface Mount	SOT-563, SOT-666	SOT-563-6	-55°C ~ 150°C
SSB44HE3_A/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 4A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 490mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C	package: DO-214AA, SMB	Voorraad2.448	40V	4A	490mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 150°C
BYW33-TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 300V 2A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	package: SOD-57, Axial	Voorraad4.608	300V	2A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 300V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
SFT17GHA1G	TSC America Inc.	DIODE, SUPER FAST, 1A, 500V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 500V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	package: T-18, Axial	Voorraad7.216	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT110 A1G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	package: T-18, Axial	Voorraad4.288	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
RSFBLHMQG	TSC America Inc.	DIODE, FAST, 0.5A, 100V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	package: DO-219AB	Voorraad5.168	100V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RN 1ZV1	Sanken	DIODE GEN PURP 200V 1.5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 20µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	package: Axial	Voorraad3.648	200V	1.5A	920mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	20µA @ 200V	-	Through Hole	Axial	-	-40°C ~ 150°C
EU02AV1	Sanken	DIODE GEN PURP 600V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	package: Axial	Voorraad3.344	600V	1A	1.4V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	10µA @ 600V	-	Through Hole	Axial	-	-40°C ~ 150°C
S8M	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -50°C ~ 150°C	package: -	Request a Quote	1000 V	8A	980 mV @ 8 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 1000 V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-50°C ~ 150°C
B2100-13-F-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 7 µA @ 100 V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	package: -	Request a Quote	100 V	2A	790 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	7 µA @ 100 V	75pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
SEG10FG-M3-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 400V 1A DO219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C	package: -	Voorraad25.230	400 V	1A	1.1 V @ 700 mA	Standard Recovery >500ns, > 200mA (Io)	1.2 µs	5 µA @ 400 V	7.3pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
MBR5U45-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 470 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277 Operating Temperature - Junction: -55°C ~ 150°C	package: -	Request a Quote	45 V	5A	470 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 45 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277	-55°C ~ 150°C
MURSD860B-TP	Micro Commercial Co	DIODE GEN PURP 600V 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 150°C	package: -	Voorraad12.537	600 V	8A	3.6 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	10 µA @ 600 V	40pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)	-55°C ~ 150°C
MA10XA10-TE12L	KYOCERA AVX	SCHOTTKY BARRIER DIODE, 1A, 100V Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 730 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Supplier Device Package: MA (DO-221BC) Operating Temperature - Junction: -55°C ~ 150°C	package: -	Voorraad8.664	100 V	10A	730 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 100 V	-	Surface Mount	DO-221BC, SMA Flat Leads Exposed Pad	MA (DO-221BC)	-55°C ~ 150°C
D2450N06TXPSA1	Infineon Technologies	DIODE GEN PURP 600V 2450A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2450A Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 180°C	package: -	Request a Quote	600 V	2450A	880 mV @ 2000 A	Standard Recovery >500ns, > 200mA (Io)	-	50 mA @ 600 V	-	Clamp On	DO-200AB, B-PUK	-	-40°C ~ 180°C
US1NWFQ-7	Diodes Incorporated	ULTRAFAST RECOVERY RECTIFIER SOD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 5 µA @ 1.2 kV Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	package: -	Request a Quote	1200 V	1A	2 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	5 µA @ 1.2 kV	5pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-55°C ~ 150°C
PMEG3020BER-QX	Nexperia USA Inc.	DIODE SCHOTTKY 30V 2A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 30 V Capacitance @ Vr, F: 170pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: 150°C	package: -	Voorraad8.580	30 V	2A	520 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 30 V	170pF @ 1V, 1MHz	Surface Mount	SOD-123W	SOD-123W	150°C
S15MC-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 15A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 93pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	package: -	Request a Quote	1000 V	15A	1.1 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 1000 V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
VSSAF512HM3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 120V 5A DO221AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 120 V Capacitance @ Vr, F: 360pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C	package: -	Request a Quote	120 V	5A	880 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 120 V	360pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-40°C ~ 150°C
VS-100BGQ045-N4	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 45V 100A POWIRTAB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 45 V Capacitance @ Vr, F: 2700pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: PowerTab® Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 150°C	package: -	Request a Quote	45 V	100A	770 mV @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	2700pF @ 5V, 1MHz	Through Hole	PowerTab®	PowerTab®	-55°C ~ 150°C

E0714D

Diodes Incorporated

DIODE

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Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
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Capacitance @ Vr, F: -
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package: -

Voorraad3.152

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VS-SDE270M12MPBF

Vishay Semiconductor Diodes Division

MOD DIODE MAP COMPRESSED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
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Operating Temperature - Junction: -

package: -

Voorraad3.504

-

CDBMH230-HF

Comchip Technology

DIODE SCHOTTKY 30V 2A SOD123T

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: 160pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123T
Supplier Device Package: SOD-123T
Operating Temperature - Junction: -55°C ~ 125°C

package: SOD-123T

Voorraad5.520

30V

2A (DC)

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

160pF @ 4V, 1MHz

Surface Mount

SOD-123T

-55°C ~ 125°C

GP20G-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 2A GP20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C

package: DO-201AA, DO-27, Axial

Voorraad5.552

400V

2A

1.1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

5µs

5µA @ 400V

-

Through Hole

DO-201AA, DO-27, Axial

GP20

-65°C ~ 150°C

MR752RL

ON Semiconductor

DIODE GP 200V 6A MICRODE BUTTON

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Button, Axial
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C

package: Button, Axial

Voorraad6.288

200V

6A

900mV @ 6A

Standard Recovery >500ns, > 200mA (Io)

-

25µA @ 200V

-

Through Hole

Button, Axial

Microde Button

-65°C ~ 175°C

30WQ03FN

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 3.5A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Operating Temperature - Junction: -40°C ~ 150°C

package: TO-252-3, DPak (2 Leads + Tab), SC-63

Voorraad555.312

30V

3.5A

450mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 30V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

-40°C ~ 150°C

MS108/TR8

Microsemi Corporation

DIODE SCHOTTKY 80V 1A DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 810mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 80V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 175°C

package: DO-204AL, DO-41, Axial

Voorraad5.872

80V

1A

810mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 80V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 175°C

FESB16ATHE3/81

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 16A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Voorraad5.616

50V

16A

975mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 50V

175pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

VS-6TQ045S-M3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 6A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 45V
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Voorraad5.008

45V

6A

600mV @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

-

800µA @ 45V

400pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263 (D2Pak)

-55°C ~ 175°C

VS-4ECU06-M3/9AT

Vishay Semiconductor Diodes Division

DIODE FRED 600V 4A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41ns
Current - Reverse Leakage @ Vr: 3µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 175°C

package: DO-214AB, SMC

Voorraad6.704

600V

4A

1.3V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

41ns

3µA @ 600V

-

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 175°C

NSVR0320XV6T1G

ON Semiconductor

DIODE SCHOTTKY 23V 1A SOT563

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 23V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 270mV @ 10mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 15V
Capacitance @ Vr, F: 35pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563-6
Operating Temperature - Junction: -55°C ~ 150°C

package: SOT-563, SOT-666

Voorraad3.904

23V

1A (DC)

270mV @ 10mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 15V

35pF @ 5V, 1MHz

Surface Mount

SOT-563, SOT-666

SOT-563-6

-55°C ~ 150°C

SSB44HE3_A/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 4A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C

package: DO-214AA, SMB

Voorraad2.448

40V

4A

490mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 40V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-65°C ~ 150°C

BYW33-TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 300V 2A SOD57

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C

package: SOD-57, Axial

Voorraad4.608

300V

2A

1.1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

5µA @ 300V

-

Through Hole

SOD-57, Axial

SOD-57

-55°C ~ 175°C

SFT17GHA1G

TSC America Inc.

DIODE, SUPER FAST, 1A, 500V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 500V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

package: T-18, Axial

Voorraad7.216

500V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 500V

10pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

SRT110 A1G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

package: T-18, Axial

Voorraad4.288

100V

1A

800mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

RSFBLHMQG

TSC America Inc.

DIODE, FAST, 0.5A, 100V, 150NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

package: DO-219AB

Voorraad5.168

100V

500mA

1.3V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 100V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

RN 1ZV1

Sanken

DIODE GEN PURP 200V 1.5A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 20µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

package: Axial

Voorraad3.648

200V

1.5A

920mV @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

20µA @ 200V

-

Through Hole

Axial

-

-40°C ~ 150°C

EU02AV1

Sanken

DIODE GEN PURP 600V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

package: Axial

Voorraad3.344

600V

1A

1.4V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

400ns

10µA @ 600V

-

Through Hole

Axial

-

-40°C ~ 150°C

S8M

Diotec Semiconductor

IC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -50°C ~ 150°C

package: -

Request a Quote

1000 V

8A

980 mV @ 8 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

10 µA @ 1000 V

-

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-50°C ~ 150°C

B2100-13-F-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 7 µA @ 100 V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

package: -

Request a Quote

100 V

2A

790 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

7 µA @ 100 V

75pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

SEG10FG-M3-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 1A DO219AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C

package: -

Voorraad25.230

400 V

1A

1.1 V @ 700 mA

Standard Recovery >500ns, > 200mA (Io)

1.2 µs

5 µA @ 400 V

7.3pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 175°C

MBR5U45-TP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C

package: -

Request a Quote

45 V

5A

470 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 45 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277

-55°C ~ 150°C

MURSD860B-TP

Micro Commercial Co

DIODE GEN PURP 600V 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C

package: -

Voorraad12.537

600 V

8A

3.6 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

40 ns

10 µA @ 600 V

40pF @ 4V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

-55°C ~ 150°C

MA10XA10-TE12L

KYOCERA AVX

SCHOTTKY BARRIER DIODE, 1A, 100V

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Supplier Device Package: MA (DO-221BC)
Operating Temperature - Junction: -55°C ~ 150°C

package: -

Voorraad8.664

100 V

10A

730 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 100 V

-

Surface Mount

DO-221BC, SMA Flat Leads Exposed Pad

MA (DO-221BC)

-55°C ~ 150°C

D2450N06TXPSA1

Infineon Technologies

DIODE GEN PURP 600V 2450A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2450A
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 180°C

package: -

Request a Quote

600 V

2450A

880 mV @ 2000 A

Standard Recovery >500ns, > 200mA (Io)

-

50 mA @ 600 V

-

Clamp On

DO-200AB, B-PUK

-

-40°C ~ 180°C

US1NWFQ-7

Diodes Incorporated

ULTRAFAST RECOVERY RECTIFIER SOD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1.2 kV
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C

package: -

Request a Quote

1200 V

1A

2 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

80 ns

5 µA @ 1.2 kV

5pF @ 4V, 1MHz

Surface Mount

SOD-123F

-55°C ~ 150°C

PMEG3020BER-QX

Nexperia USA Inc.

DIODE SCHOTTKY 30V 2A SOD123W

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 150°C

package: -

Voorraad8.580

30 V

2A

520 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 30 V

170pF @ 1V, 1MHz

Surface Mount

SOD-123W

150°C

S15MC-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 15A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

package: -

Request a Quote

1000 V

15A

1.1 V @ 15 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 1000 V

93pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

VSSAF512HM3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 120V 5A DO221AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 µA @ 120 V
Capacitance @ Vr, F: 360pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C

package: -

Request a Quote

120 V

5A

880 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

400 µA @ 120 V

360pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-40°C ~ 150°C

VS-100BGQ045-N4

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 100A POWIRTAB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: PowerTab®
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C

package: -

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45 V

100A

770 mV @ 100 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 45 V

2700pF @ 5V, 1MHz

Through Hole

PowerTab®

-55°C ~ 150°C