Pagina 82 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 3.259
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Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF9910PBF
Infineon Technologies

MOSFET 2N-CH 20V 10A/12A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A, 12A
  • Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad5.952
Logic Level Gate
20V
10A, 12A
13.4 mOhm @ 10A, 10V
2.55V @ 250µA
11nC @ 4.5V
900pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BSO204PNTMA1
Infineon Technologies

MOSFET 2P-CH 20V 7A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 35.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1513pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: P-DSO-8
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad5.296
Logic Level Gate
20V
7A
30 mOhm @ 7A, 4.5V
1.2V @ 60µA
35.8nC @ 4.5V
1513pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
P-DSO-8
hot IRF7757TR
Infineon Technologies

MOSFET 2N-CH 20V 4.8A TSSOP-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 15V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: 8-TSSOP (0.173", 4.40mm Width)
Voorraad45.300
Logic Level Gate
20V
4.8A
35 mOhm @ 4.8A, 4.5V
1.2V @ 250µA
23nC @ 4.5V
1340pF @ 15V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
TMC1620-TO
Trinamic Motion Control GmbH

MOSFET N/P-CH 60V TO252-4

  • FET Type: N and P-Channel, Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A, 4.7A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
  • Power - Max: 3.13W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
  • Supplier Device Package: TO-252-4L
package: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Voorraad7.808
Standard
60V
6.6A, 4.7A
36 mOhm @ 6A, 10V
3V @ 250µA
19.2nC @ 4.5V
1560pF @ 25V
3.13W
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-5, DPak (4 Leads + Tab), TO-252AD
TO-252-4L
hot EMH2412-TL-H
ON Semiconductor

MOSFET 2N-CH 24V 6A EMH8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-EMH
package: 8-SMD, Flat Lead
Voorraad72.000
Logic Level Gate
24V
6A
27 mOhm @ 3A, 4.5V
-
6.3nC @ 4.5V
-
1.4W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-EMH
hot SI6933DQ-T1-E3
Vishay Siliconix

MOSFET 2P-CH 30V 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: 8-TSSOP (0.173", 4.40mm Width)
Voorraad85.152
Logic Level Gate
30V
-
45 mOhm @ 3.5A, 10V
1V @ 250µA (Min)
30nC @ 10V
-
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
FD6M016N03
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 80A EPM15

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A
  • Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 295nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 15V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: EPM15
  • Supplier Device Package: EPM15
package: EPM15
Voorraad7.680
Standard
30V
80A
1.6 mOhm @ 40A, 10V
3V @ 250µA
295nC @ 10V
11535pF @ 15V
-
-40°C ~ 150°C (TJ)
Through Hole
EPM15
EPM15
hot AO4932
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 11A/8A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A, 8A
  • Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad808.692
Logic Level Gate
30V
11A, 8A
12.5 mOhm @ 11A, 10V
2.1V @ 250µA
24nC @ 10V
1400pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
FMM150-0075P
IXYS

MOSFET 2N-CH 75V 150A I4-PAC-5

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 120A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
package: i4-Pac?-5
Voorraad3.504
Standard
75V
150A
4.2 mOhm @ 120A, 10V
4V @ 1mA
225nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
IRF7316PBF
Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad5.696
Logic Level Gate
30V
4.9A
58 mOhm @ 4.9A, 10V
1V @ 250µA
34nC @ 10V
710pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTM20HM08FG
Microsemi Corporation

MOSFET 4N-CH 200V 208A SP6

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 208A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Power - Max: 781W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
package: SP6
Voorraad5.248
Standard
200V
208A
10 mOhm @ 104A, 10V
5V @ 5mA
280nC @ 10V
14400pF @ 25V
781W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
SMA5112
Sanken

MOSFET 6N-CH 250V 7A 12-SIP

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
  • Power - Max: 4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 12-SIP, Exposed Tab
  • Supplier Device Package: 12-SIP
package: 12-SIP, Exposed Tab
Voorraad3.744
Standard
250V
7A
500 mOhm @ 3.5A, 10V
4V @ 1mA
-
450pF @ 10V
4W
150°C (TJ)
Through Hole
12-SIP, Exposed Tab
12-SIP
ALD114835PCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Depletion Mode
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
  • Rds On (Max) @ Id, Vgs: 540 Ohm @ 0V
  • Vgs(th) (Max) @ Id: 3.45V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
package: 16-DIP (0.300", 7.62mm)
Voorraad4.960
Depletion Mode
10.6V
12mA, 3mA
540 Ohm @ 0V
3.45V @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
ALD210804PCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16DIP

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 80mA
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 20mV @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
package: 16-DIP (0.300", 7.62mm)
Voorraad3.808
Logic Level Gate
10.6V
80mA
-
20mV @ 10µA
-
-
500mW
0°C ~ 70°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
hot SI7872DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 6.4A PPAK SO-8

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
package: PowerPAK? SO-8 Dual
Voorraad1.314.228
Logic Level Gate
30V
6.4A
22 mOhm @ 7.5A, 10V
3V @ 250µA
11nC @ 4.5V
-
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot SI7872DP-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 6.4A PPAK SO-8

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
package: PowerPAK? SO-8 Dual
Voorraad1.201.320
Logic Level Gate
30V
6.4A
22 mOhm @ 7.5A, 10V
3V @ 250µA
11nC @ 4.5V
-
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
TPC8407,LQ(S
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 9A/7.4A 8SOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A, 7.4A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad7.168
Logic Level Gate
30V
9A, 7.4A
17 mOhm @ 4.5A, 10V
2.3V @ 100µA
17nC @ 10V
1190pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMN2008LFU-13
Diodes Incorporated

MOSFET 2NCH 20V 14.5A UDFN2030

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 14.5A
  • Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6 (Type B)
package: 6-UFDFN Exposed Pad
Voorraad3.536
Standard
20V
14.5A
5.4 mOhm @ 5.5A, 4.5V
1.5V @ 250µA
42.3nC @ 10V
1418pF @ 10V
1W
-55°C ~ 150°C (TJ)
Surface Mount
6-UFDFN Exposed Pad
U-DFN2030-6 (Type B)
ECH8655R-R-TL-H
ON Semiconductor

MOSFET 2N-CH 24V 9A ECH8

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
package: 8-SMD, Flat Lead
Voorraad5.792
-
-
-
-
-
-
-
-
-
Surface Mount
8-SMD, Flat Lead
8-ECH
hot EFC4619R-TR
ON Semiconductor

MOSFET 2N-CH EFCP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.6W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA
  • Supplier Device Package: 4-EFCP (1.61x1.61)
package: 4-XFBGA
Voorraad161.100
Logic Level Gate, 2.5V Drive
-
-
-
-
21.7nC @ 4.5V
-
1.6W
150°C (TJ)
Surface Mount
4-XFBGA
4-EFCP (1.61x1.61)
DMN32D4SDW-13
Diodes Incorporated

MOSFET 2N-CH 30V 0.65A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 650mA
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
  • Power - Max: 290mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: 6-TSSOP, SC-88, SOT-363
Voorraad2.720
Standard
30V
650mA
400 mOhm @ 250mA, 10V
1.6V @ 250µA
1.3nC @ 10V
50pF @ 15V
290mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
APTM10AM02FG
Microsemi Corporation

MOSFET 2N-CH 100V 495A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 495A
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
package: SP6
Voorraad4.144
Standard
100V
495A
2.5 mOhm @ 200A, 10V
4V @ 10mA
1360nC @ 10V
40000pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
PMDXB950UPELZ
Nexperia USA Inc.

20 V, DUAL P-CHANNEL TRENCH MOSF

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
  • Power - Max: 380mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
package: 6-XFDFN Exposed Pad
Voorraad6.400
Standard
20V
500mA
1.4 Ohm @ 500mA, 4.5V
950mV @ 250µA
2.1nC @ 4.5V
43pF @ 10V
380mW
-55°C ~ 150°C (TJ)
Surface Mount
6-XFDFN Exposed Pad
DFN1010B-6
FDPC8016S
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 8PWRCLIP

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 20A, 35A
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V
  • Power - Max: 2.1W, 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: Power Clip 56
package: 8-PowerWDFN
Voorraad4.160
Logic Level Gate
25V
20A, 35A
3.8 mOhm @ 20A, 10V
2.5V @ 250µA
35nC @ 10V
2375pF @ 13V
2.1W, 2.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
Power Clip 56
hot NTLUD3A50PZTAG
ON Semiconductor

MOSFET 2P-CH 20V 2.8A UDFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
package: 6-UDFN Exposed Pad
Voorraad54.024
Logic Level Gate
20V
2.8A
50 mOhm @ 4A, 4.5V
1V @ 250µA
10.4nC @ 4.5V
920pF @ 15V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
6-UDFN (2x2)
hot DMN5010VAK-7
Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT-563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: SOT-563, SOT-666
Voorraad36.000
Logic Level Gate
50V
280mA
2 Ohm @ 50mA, 5V
1V @ 250µA
-
50pF @ 25V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
IRF7329PBF
Infineon Technologies

MOSFET 2P-CH 12V 9.2A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 9.2A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad29.730
Logic Level Gate
12V
9.2A
17 mOhm @ 9.2A, 4.5V
900mV @ 250µA
57nC @ 4.5V
3450pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot DMG1016V-7
Diodes Incorporated

MOSFET N/P-CH 20V SOT563

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
  • Power - Max: 530mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: SOT-563, SOT-666
Voorraad49.912.500
Logic Level Gate
20V
870mA, 640mA
400 mOhm @ 600mA, 4.5V
1V @ 250µA
0.74nC @ 4.5V
60.67pF @ 16V
530mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot DMN63D8LDW-7
Diodes Incorporated

MOSFET 2N-CH 30V 0.22A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 220mA
  • Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 870nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: 6-TSSOP, SC-88, SOT-363
Voorraad88.800
Logic Level Gate
30V
220mA
2.8 Ohm @ 250mA, 10V
1.5V @ 250µA
870nC @ 10V
22pF @ 25V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot FDC6506P
Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 1.8A SSOT6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A
  • Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: SuperSOT?-6
package: SOT-23-6 Thin, TSOT-23-6
Voorraad3.992.724
Logic Level Gate
30V
1.8A
170 mOhm @ 1.8A, 10V
3V @ 250µA
3.5nC @ 10V
190pF @ 15V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT?-6