Afbeelding |
Onderdeelnummer |
Fabrikant |
Omschrijving |
package |
Voorraad |
Aantal |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 63A WDSON-2
|
package: 3-WDSON |
Voorraad6.416 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta), 63A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 34nC @ 10V | 2600pF @ 15V | ±20V | - | - | 4.5 mOhm @ 20A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M? | 3-WDSON |
||
Infineon Technologies |
MOSFET N-CH 30V 105A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad405.168 |
|
MOSFET (Metal Oxide) | 30V | 105A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 35nC @ 4.5V | 2840pF @ 15V | ±20V | - | 110W (Tc) | 6 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 30V 8A 8-TSSOP
|
package: 8-TSSOP (0.173", 4.40mm Width) |
Voorraad33.492 |
|
MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 88nC @ 10V | 2774pF @ 25V | ±20V | - | 1.5W (Tc) | 18 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
||
ON Semiconductor |
MOSFET N-CH 60V 75A ATPAK
|
package: ATPAK (2 leads+tab) |
Voorraad6.624 |
|
MOSFET (Metal Oxide) | 60V | 75A (Ta) | 4V, 10V | - | 96nC @ 10V | 4850pF @ 20V | ±20V | - | 60W (Tc) | 8.1 mOhm @ 38A, 10V | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
||
NXP |
MOSFET N-CH 40V 75A LFPAK
|
package: SC-100, SOT-669 |
Voorraad6.576 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 1mA | 36.3nC @ 10V | 2040pF @ 25V | ±20V | - | 105W (Tc) | 8 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH TO-92
|
package: TO-226-3, TO-92-3 (TO-226AA) |
Voorraad6.976 |
|
MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
ON Semiconductor |
MOSFET N-CH 30V 14.5A IPAK
|
package: TO-251-3 Stub Leads, IPak |
Voorraad7.312 |
|
MOSFET (Metal Oxide) | 30V | 14.5A (Ta), 124A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 40nC @ 4.5V | 4490pF @ 12V | ±20V | - | 1.43W (Ta), 93.75W (Tc) | 4 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 12A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad3.024 |
|
MOSFET (Metal Oxide) | 60V | 12A (Tc) | 4.5V, 10V | 3V @ 250µA | 11.3nC @ 10V | 350pF @ 25V | ±16V | - | 38W (Tc) | 92 mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad6.416 |
|
MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 4V, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | ±10V | - | 2.5W (Ta), 25W (Tc) | 200 mOhm @ 4.6A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 200V 2.6A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad4.496 |
|
MOSFET (Metal Oxide) | 200V | 2.6A (Tc) | 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 1.5 Ohm @ 1.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7P
|
package: TO-263-7, D2Pak (6 Leads + Tab) |
Voorraad7.472 |
|
MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 4V @ 250µA | 240nC @ 10V | 9130pF @ 25V | ±20V | - | 380W (Tc) | 1.25 mOhm @ 195A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab) |
||
IXYS |
MOSFET N-CH 900V 13A TO-247
|
package: TO-247-3 |
Voorraad2.384 |
|
MOSFET (Metal Oxide) | 900V | 13A (Tc) | 10V | 4.5V @ 4mA | 155nC @ 10V | 4200pF @ 25V | ±20V | - | 300W (Tc) | 800 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
Transphorm |
650V, 150M
|
package: - |
Voorraad3.024 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 600V 17A TO-220AB
|
package: TO-220-3 |
Voorraad7.504 |
|
MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 5V @ 250µA | 90nC @ 10V | 1780pF @ 100V | ±30V | - | 277.8W (Tc) | 340 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Texas Instruments |
CHANNEL NEXFET POWER MOSFET
|
package: 4-UFBGA, DSBGA |
Voorraad3.248 |
|
MOSFET (Metal Oxide) | 12V | 1.6A (Ta) | 2.5V, 4.5V | 1.3V @ 250µA | 7.8nC @ 4.5V | 862pF @ 6V | ±10V | - | 1.8W (Ta) | 17.1 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-DSBGA (1x1) | 4-UFBGA, DSBGA |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.17A
|
package: SC-75, SOT-416 |
Voorraad7.360 |
|
MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 4.5V, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | 17pF @ 10V | ±20V | - | 150mW (Ta) | 3.9 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 12A TO220SIS
|
package: TO-220-3 Full Pack |
Voorraad4.720 |
|
MOSFET (Metal Oxide) | 600V | 12A (Ta) | 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | ±30V | - | 35W (Tc) | 400 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Panasonic Electronic Components |
MOSFET N-CH 500V 7A TO-220D
|
package: TO-220-3 Full Pack |
Voorraad8.628 |
|
MOSFET (Metal Oxide) | 500V | 7A (Tc) | 10V | 5V @ 1mA | - | 1200pF @ 20V | ±30V | - | 2W (Ta), 40W (Tc) | 1 Ohm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-220D-A1 | TO-220-3 Full Pack |
||
Texas Instruments |
MOSFET N-CH 100V 100A VSONP
|
package: 8-PowerTDFN |
Voorraad16.416 |
|
MOSFET (Metal Oxide) | 100V | 100A (Ta) | 6V, 10V | 3.4V @ 250µA | 35nC @ 10V | 2670pF @ 50V | ±20V | - | 3.2W (Ta), 96W (Tc) | 9.4 mOhm @ 13A, 6V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
||
IXYS |
MOSFET P-CH 150V 44A TO-3P
|
package: TO-3P-3, SC-65-3 |
Voorraad103.464 |
|
MOSFET (Metal Oxide) | 150V | 44A (Tc) | 10V | 4V @ 250µA | 175nC @ 10V | 13400pF @ 25V | ±15V | - | 298W (Tc) | 65 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 75A TO-247
|
package: TO-247-3 |
Voorraad13.128 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 210nC @ 20V | 3200pF @ 25V | ±20V | - | 285W (Tc) | 8 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 100V 40A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad12.408 |
|
MOSFET (Metal Oxide) | 100V | 40A (Tc) | 5V, 10V | 2.5V @ 250µA | 64nC @ 4.5V | 2300pF @ 25V | ±15V | - | 150W (Tc) | 33 mOhm @ 20A, 10V | -65°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
package: 8-PowerVDFN |
Voorraad3.152 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 10V @ 10µA | 41nC @ 10V | 3900pF @ 15V | ±20V | - | 104W (Tc) | 1.2 mOhm @ 80A, 10V | 175°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
||
Diodes Incorporated |
MOSFET P-CH 12V 2.6A 4-UFCSP
|
package: 4-UFBGA, WLBGA |
Voorraad3.712 |
|
MOSFET (Metal Oxide) | 12V | 2.6A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 3.7nC @ 4.5V | 251pF @ 6V | -5V | - | 820mW (Ta) | 102 mOhm @ 500mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-WLB1010-4 | 4-UFBGA, WLBGA |
||
Infineon Technologies |
MOSFET N-CH 600V 25A TO-247
|
package: TO-247-3 |
Voorraad269.736 |
|
MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 3.5V @ 1.1mA | 70nC @ 10V | 2500pF @ 100V | ±20V | - | 208W (Tc) | 125 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 20V 4.2A SOT-23-3
|
package: TO-236-3, SC-59, SOT-23-3 |
Voorraad939.084 |
|
MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 740pF @ 15V | ±12V | - | 1.25W (Ta) | 45 mOhm @ 4.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET P-CH 100V 13A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad576.936 |
|
MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | ±20V | - | 66W (Tc) | 205 mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 400V 1.7A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad642.672 |
|
MOSFET (Metal Oxide) | 400V | 1.7A (Tc) | 10V | 4V @ 250µA | 12nC @ 10V | 170pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 3.6 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET P CH 20V 4.3A SOT23
|
package: TO-236-3, SC-59, SOT-23-3 |
Voorraad345.990 |
|
MOSFET (Metal Oxide) | 20V | 4.3A (Ta) | 1.8V, 10V | 1.4V @ 250µA | 9.1nC @ 4.5V | 216pF @ 15V | ±10V | - | 800mW (Ta) | 38 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Texas Instruments |
MOSFET N-CH 25V 100A 8-SON
|
package: 8-PowerTDFN |
Voorraad486.192 |
|
MOSFET (Metal Oxide) | 25V | 31A (Ta), 100A (Tc) | 3V, 8V | 1.4V @ 250µA | 19nC @ 4.5V | 3100pF @ 12.5V | +10V, -8V | - | 3.1W (Ta) | 2.4 mOhm @ 25A, 8V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |