Afbeelding |
Onderdeelnummer |
Fabrikant |
Omschrijving |
package |
Voorraad |
Aantal |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 120A TO220-3
|
package: TO-220-3 |
Voorraad4.560 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 118µA | 165nC @ 10V | 13000pF @ 30V | ±20V | - | 188W (Tc) | 3.2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3
|
package: TO-220-3 |
Voorraad5.440 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 2V @ 93µA | 80nC @ 10V | 2075pF @ 25V | ±20V | - | 158W (Tc) | 11 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 47A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad419.028 |
|
MOSFET (Metal Oxide) | 100V | 47A (Tc) | 10V | 4V @ 2mA | 105nC @ 10V | 2500pF @ 25V | ±20V | - | 175W (Tc) | 33 mOhm @ 33A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 12V 8.9A 8-SOIC
|
package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad82.200 |
|
MOSFET (Metal Oxide) | 12V | 8.9A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 20nC @ 4.5V | 1877pF @ 10V | ±8V | - | 2.5W (Ta) | 24 mOhm @ 8.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET N-CH 40V 7.5A 8SOIC
|
package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad465.648 |
|
MOSFET (Metal Oxide) | 40V | 5.8A (Ta) | 4.5V, 10V | 3V @ 250µA | 17nC @ 10V | 785pF @ 20V | ±20V | - | 1.5W (Ta) | 25 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 30V 8.5A PPAK 1212-8
|
package: PowerPAK? 1212-8 |
Voorraad19.536 |
|
MOSFET (Metal Oxide) | 30V | 8.5A (Ta) | 2.5V, 10V | 1.5V @ 250µA | 30nC @ 4.5V | - | ±12V | - | 1.5W (Ta) | 13 mOhm @ 13.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Vishay Siliconix |
MOSFET N-CH 30V 36A 8-SOIC
|
package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad3.440 |
|
MOSFET (Metal Oxide) | 30V | 36A (Tc) | 4.5V, 10V | 2.6V @ 250µA | 126nC @ 10V | 4645pF @ 15V | ±20V | - | 3.5W (Ta), 7.8W (Tc) | 2.7 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
NXP |
MOSFET N-CH 40V 75A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad2.112 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.5V, 10V | 2V @ 1mA | 32.7nC @ 5V | 2700pF @ 25V | ±15V | - | 157W (Tc) | 7 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 60V 30A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad8.448 |
|
MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 4V @ 250µA | 46nC @ 10V | 1200pF @ 25V | ±20V | - | 3.7W (Ta), 88W (Tc) | 50 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 50V 18A TO-220AB
|
package: TO-220-3 |
Voorraad397.584 |
|
MOSFET (Metal Oxide) | 50V | 18A (Tc) | 10V | 4V @ 250µA | 39nC @ 10V | 900pF @ 25V | ±20V | - | 74W (Tc) | 140 mOhm @ 9.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
NXP |
MOSFET N-CH 30V 4.9A SOT-23
|
package: TO-236-3, SC-59, SOT-23-3 |
Voorraad4.288 |
|
MOSFET (Metal Oxide) | 30V | 4.9A (Tc) | 1.8V, 4.5V | 700mV @ 1mA | 9.3nC @ 4.5V | 445pF @ 30V | ±8V | - | 1.9W (Tc) | 47 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH BARE DIE
|
package: - |
Voorraad5.744 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 40V 80A TO262-3
|
package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad3.056 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 65µA | 60nC @ 10V | 3900pF @ 25V | ±20V | - | 115W (Tc) | 4.8 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 400V 0.21A SOT-223
|
package: TO-261-4, TO-261AA |
Voorraad5.936 |
|
MOSFET (Metal Oxide) | 400V | 210mA (Ta) | 0V, 10V | 1V @ 94µA | 6.8nC @ 5V | 135pF @ 25V | ±20V | Depletion Mode | 1.8W (Ta) | 18 Ohm @ 210mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 100V 0.19A SOT-23
|
package: TO-236-3, SC-59, SOT-23-3 |
Voorraad6.944 |
|
MOSFET (Metal Oxide) | 100V | 190mA (Ta) | 4.5V, 10V | 2.3V @ 13µA | 0.6nC @ 10V | 20.9pF @ 25V | ±20V | - | 500mW (Ta) | 6 Ohm @ 190mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Rohm Semiconductor |
MOSFET N-CH 30V 12.5A 8SOIC
|
package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad4.448 |
|
MOSFET (Metal Oxide) | 30V | 12.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 28nC @ 5V | 1670pF @ 10V | 20V | - | 2W (Ta) | 8.9 mOhm @ 12.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET P-CH 100V 3.1A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad7.600 |
|
MOSFET (Metal Oxide) | 100V | 3.1A (Tc) | 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 1.2 Ohm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 600V 21A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad5.696 |
|
MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 5V @ 250µA | 80nC @ 10V | 2400pF @ 50V | ±25V | - | 160W (Tc) | 160 mOhm @ 10.5A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Micro Commercial Co |
N-CHANNEL MOSFET, SOP-8 PACKAGE
|
package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad3.216 |
|
MOSFET (Metal Oxide) | 60V | 8.2A | 10V | 3V @ 250µA | 58nC @ 10V | 2300pF @ 30V | ±20V | - | 1.25W | 36 mOhm @ 7.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
TSC America Inc. |
MOSFET, SINGLE, P-CHANNEL, -30V,
|
package: TO-236-3, SC-59, SOT-23-3 |
Voorraad4.112 |
|
MOSFET (Metal Oxide) | 30V | 3A (Tc) | 4.5V, 10V | 3V @ 250µA | 10nC @ 10V | 565pF @ 30V | ±20V | - | 1.25W (Ta) | 95 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 150V 24A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad221.352 |
|
MOSFET (Metal Oxide) | 150V | 24A (Tc) | 10V | 5V @ 250µA | 45nC @ 10V | 890pF @ 25V | ±30V | - | 140W (Tc) | 95 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N CH 40V 195A TO-262
|
package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad7.200 |
|
MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 3.9V @ 150µA | 225nC @ 10V | 7330pF @ 25V | ±20V | - | 230W (Tc) | 1.8 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Nexperia USA Inc. |
MOSFET N-CH 100V I2PAK
|
package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad17.412 |
|
MOSFET (Metal Oxide) | 100V | 68A (Tc) | 10V | 4V @ 1mA | 59nC @ 10V | 3195pF @ 50V | ±20V | - | 170W (Tc) | 13.9 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 100V 5.4A 8-SOIC
|
package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad60.480 |
|
MOSFET (Metal Oxide) | 100V | 5.4A (Ta) | 10V | 4V @ 250µA | 56nC @ 10V | 1720pF @ 25V | ±20V | - | 2.5W (Ta) | 39 mOhm @ 3.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Rohm Semiconductor |
MOSFET N-CH 30V 7A 8-HUML
|
package: 8-PowerUDFN |
Voorraad2.816 |
|
MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 2V @ 250µA | 8.9nC @ 10V | 410pF @ 15V | ±20V | - | 2W (Ta) | 28.6 mOhm @ 7A, 10V | 150°C (TJ) | Surface Mount | 6-HUML2020L8 (2x2) | 8-PowerUDFN |
||
ON Semiconductor |
MOSFET N-CH 24V 6A EFCP
|
package: 4-XFBGA |
Voorraad28.800 |
|
MOSFET (Metal Oxide) | 24V | 6A (Ta) | - | 1.3V @ 1mA | 7nC @ 4.5V | - | ±12V | - | 1.6W (Ta) | 45 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | EFCP1313-4CC-037 | 4-XFBGA |
||
Diodes Incorporated |
MOSFET N-CHA 40V 17.6A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad21.222 |
|
MOSFET (Metal Oxide) | 40V | 17.6A (Ta), 76A (Tc) | 10V | 4V @ 250µA | 41.9nC @ 10V | 2082pF @ 25V | ±20V | - | 3.1W (Ta) | 6 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 60V 120A TO-220
|
package: TO-220-3 |
Voorraad19.920 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 250µA | 100nC @ 10V | 6400pF @ 25V | ±20V | - | 237W (Tc) | 2 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 25V 39A TDSON-8
|
package: 8-PowerTDFN |
Voorraad738.408 |
|
MOSFET (Metal Oxide) | 25V | 39A (Ta), 58A (Tc) | 4.5V, 10V | 2V @ 250µA | 10.4nC @ 10V | 760pF @ 12V | ±20V | - | 2.5W (Ta), 28W (Tc) | 5 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET N-CH 20V 2A SOT23-3
|
package: TO-236-3, SC-59, SOT-23-3 |
Voorraad26.406 |
|
MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.8V, 4.5V | 1V @ 250µA | - | 188pF @ 10V | ±12V | - | 600mW (Ta) | 110 mOhm @ 2.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |