Afbeelding |
Onderdeelnummer |
Fabrikant |
Omschrijving |
package |
Voorraad |
Aantal |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 40V 100A TO220-3
|
package: TO-220-3 |
Voorraad4.912 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4V @ 250µA | 172nC @ 10V | 5300pF @ 25V | ±20V | - | 300W (Tc) | 3.6 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 20V 36A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad3.520 |
|
MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 3V @ 250µA | 9.7nC @ 4.5V | 670pF @ 10V | ±20V | - | 47W (Tc) | 20 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 64A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad401.916 |
|
MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 31nC @ 4.5V | 2260pF @ 15V | ±12V | - | 71W (Tc) | 10.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET NCH 150V 106A TO262
|
package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad6.400 |
|
MOSFET (Metal Oxide) | 150V | 16A (Ta), 106A (Tc) | 10V | 5.1V @ 250µA | 60nC @ 10V | 3010pF @ 75V | ±20V | - | 6.2W (Ta), 277W (Tc) | 10.7 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Global Power Technologies Group |
MOSFET N-CH 250V 8A TO220F
|
package: TO-220-3 Full Pack |
Voorraad7.280 |
|
MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 5V @ 250µA | 8.4nC @ 10V | 423pF @ 25V | ±30V | - | 17.3W (Tc) | 600 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
ON Semiconductor |
MOSFET P-CH 20V 8.4A WDFN6
|
package: 6-WDFN Exposed Pad |
Voorraad4.336 |
|
MOSFET (Metal Oxide) | 20V | 5A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 28nC @ 4.5V | 2240pF @ 15V | ±8V | - | 700mW (Ta) | 18 mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
||
Vishay Siliconix |
MOSFET N-CH 55V 35A TO252
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad127.560 |
|
MOSFET (Metal Oxide) | 55V | 35A (Tc) | 4.5V, 10V | 1V @ 250µA (Min) | 13nC @ 5V | 885pF @ 25V | ±20V | - | 7.5W (Ta), 50W (Tc) | 20 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 60V 45A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad6.320 |
|
MOSFET (Metal Oxide) | 60V | 45A (Ta) | - | 4V @ 250µA | 46nC @ 10V | 1725pF @ 25V | - | - | - | 26 mOhm @ 22.5A, 10V | - | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 30V 60A POLARPAK
|
package: 10-PolarPAK? (L) |
Voorraad20.436 |
|
MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 138nC @ 10V | 6100pF @ 15V | ±20V | - | 5.2W (Ta), 125W (Tc) | 1.6 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK? (L) | 10-PolarPAK? (L) |
||
Vishay Siliconix |
MOSFET P-CH 20V 4.5A 8-SOIC
|
package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad371.460 |
|
MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 18nC @ 4.5V | - | ±8V | - | 1.3W (Ta) | 40 mOhm @ 6.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET P-CH 8V 5.2A 1206-8
|
package: 8-SMD, Flat Lead |
Voorraad410.016 |
|
MOSFET (Metal Oxide) | 8V | 5.2A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 21nC @ 4.5V | - | ±8V | - | 1.3W (Ta) | 33 mOhm @ 5.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
||
Vishay Siliconix |
MOSFET P-CH 60V 1.25A SOT23-3
|
package: TO-236-3, SC-59, SOT-23-3 |
Voorraad66.144 |
|
MOSFET (Metal Oxide) | 60V | - | 4.5V, 10V | 1V @ 250µA (Min) | 12nC @ 10V | - | ±20V | - | 1.25W (Ta) | 340 mOhm @ 1.25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 6A 8SOIC
|
package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad217.236 |
|
MOSFET (Metal Oxide) | 100V | 6A (Ta) | 6V, 10V | 4V @ 250µA | 25nC @ 10V | 1300pF @ 25V | ±20V | - | 2.5W (Ta) | 35 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 50A D-PAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad125.136 |
|
MOSFET (Metal Oxide) | 60V | 9.5A (Ta), 50A (Tc) | 5V, 10V | 3V @ 250µA | 32nC @ 5V | 2810pF @ 25V | ±20V | - | 125W (Tc) | 11.6 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 250V 2.7A TO-262
|
package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad5.264 |
|
MOSFET (Metal Oxide) | 250V | 2.7A (Tc) | 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | ±20V | - | - | 2 Ohm @ 1.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO251-3
|
package: TO-251-3 Stub Leads, IPak |
Voorraad3.776 |
|
MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 3.5V @ 110µA | 15nC @ 10V | 350pF @ 500V | ±20V | - | 45W (Tc) | 900 mOhm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
||
Vishay Siliconix |
MOSFET N-CH 250V 450MA 4-DIP
|
package: 4-DIP (0.300", 7.62mm) |
Voorraad53.700 |
|
MOSFET (Metal Oxide) | 250V | 450mA (Ta) | 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | ±20V | - | 1W (Ta) | 2 Ohm @ 270mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Toshiba Semiconductor and Storage |
SMALL LOW ON RESISTANCE MOSFET
|
package: - |
Voorraad3.728 |
|
MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.2V, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | ±10V | - | 500mW (Ta) | 1.1 Ohm @ 150mA, 4.5V | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | - |
||
Infineon Technologies |
MOSFET N-CH 500V 10A TO220-3
|
package: TO-220-3 Full Pack |
Voorraad8.184 |
|
MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 3.5V @ 370µA | 25nC @ 10V | 1020pF @ 100V | ±20V | - | 32W (Tc) | 350 mOhm @ 5.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 800V 11A TO220
|
package: TO-220-3 |
Voorraad10.284 |
|
MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 3.5V @ 220µA | 24nC @ 10V | 770pF @ 500V | ±20V | Super Junction | 73W (Tc) | 450 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 200V 5.2A TO-220AB
|
package: TO-220-3 |
Voorraad22.704 |
|
MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 4V, 5V | 2V @ 250µA | 16nC @ 5V | 360pF @ 25V | ±10V | - | 50W (Tc) | 800 mOhm @ 3.1A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 28A TO247
|
package: TO-247-3 |
Voorraad103.464 |
|
MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 3.5V @ 250µA | 70nC @ 10V | 3590pF @ 380V | ±20V | - | 278W (Tc) | 130 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Diodes Incorporated |
MOSFET P-CH 100V 2.4A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad363.372 |
|
MOSFET (Metal Oxide) | 100V | 2.4A (Ta) | 6V, 10V | 4V @ 250µA | 10.7nC @ 10V | 424pF @ 50V | ±20V | - | 2W (Ta) | 350 mOhm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 12V 6A SSOT-6
|
package: SOT-23-6 Thin, TSOT-23-6 |
Voorraad468.528 |
|
MOSFET (Metal Oxide) | 12V | 6A (Ta) | 1.8V, 4.5V | 1.5V @ 250µA | 25nC @ 4.5V | 1699pF @ 6V | ±8V | - | 1.6W (Ta) | 26 mOhm @ 6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
||
Rohm Semiconductor |
MOSFET P-CH 20V 1.5A TUMT3
|
package: 3-SMD, Flat Leads |
Voorraad405.360 |
|
MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 2.5V, 4.5V | 2V @ 1mA | 5.2nC @ 4.5V | 560pF @ 10V | ±12V | - | 800mW (Ta) | 135 mOhm @ 1.5A, 4.5V | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2.3A TSM
|
package: TO-236-3, SC-59, SOT-23-3 |
Voorraad27.306 |
|
MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 1.8V, 4V | - | 6.1nC @ 4V | 335pF @ 10V | ±8V | - | 700mW (Ta) | 127 mOhm @ 1A, 4V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
||
ON Semiconductor |
MOSFET N-CH 1700V 2.5A
|
package: TO-3P-3 Full Pack |
Voorraad6.516 |
|
MOSFET (Metal Oxide) | 1700V | 2.5A (Tc) | 10V | - | 48nC @ 10V | 850pF @ 30V | ±30V | - | 3W (Ta), 55W (Tc) | 10.5 Ohm @ 1.5A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 7A 8SOIC
|
package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad379.728 |
|
MOSFET (Metal Oxide) | 60V | 7A (Ta) | 6V, 10V | 4V @ 250µA | 32nC @ 10V | 1107pF @ 30V | ±20V | - | 2.5W (Ta) | 28 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 40V 37A 8TDSON
|
package: 8-PowerTDFN |
Voorraad153.774 |
|
MOSFET (Metal Oxide) | 40V | 37A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 87nC @ 10V | 6200pF @ 20V | ±20V | Schottky Diode (Body) | 2.5W (Ta), 139W (Tc) | 1.05 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
||
Microchip Technology |
MOSFET N-CH 40V 700MA TO92-3
|
package: TO-226-3, TO-92-3 (TO-226AA) |
Voorraad20.574 |
|
MOSFET (Metal Oxide) | 40V | 700mA (Tj) | 5V, 10V | 1.6V @ 1mA | - | 190pF @ 20V | ±20V | - | 740mW (Ta) | 750 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |