Transistors - FET's, MOSFET's - Single

IRF7464TR

Infineon Technologies

MOSFET N-CH 200V 1.2A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 730 mOhm @ 720mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

package: 8-SOIC (0.154", 3.90mm Width)

IRL3705NL

Infineon Technologies

MOSFET N-CH 55V 89A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 98nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 46A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

package: TO-262-3 Long Leads, I2Pak, TO-262AA

IRL1004

Infineon Technologies

MOSFET N-CH 40V 130A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

package: TO-220-3

PMT21EN,135

NXP

MOSFET N-CH 30V 7.4A SC-73

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 820mW (Ta), 8.33W (Tc)
• Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

package: TO-261-4, TO-261AA

BUK7C2R2-60EJ

NXP

MOSFET N-CH 60V 200A D2PAK-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: 7-DDPAK
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

PMR280UN,115

NXP

MOSFET N-CH 20V 0.98A SOT416

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 20V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 530mW (Tc)
• Rds On (Max) @ Id, Vgs: 340 mOhm @ 200mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-75
• Package / Case: SC-75, SOT-416

package: SC-75, SOT-416

ZVN4306GTC

Diodes Incorporated

MOSFET N-CH 60V 2.1A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta)
• Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

package: TO-261-4, TO-261AA

IPB50R250CPATMA1

Infineon Technologies

MOSFET N-CH 550V 13A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 550V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 520µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 114W (Tc)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDMS2D4N03S

Fairchild/ON Semiconductor

PT9 30V/16V NCH POWERTRENCH MOSF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 75W (Tc)
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PQFN (5x6), Power56
• Package / Case: 8-PowerSMD, Flat Leads

package: 8-PowerSMD, Flat Leads

DMN1004UFV-7

Diodes Incorporated

MOSFET BVDSS: 8V 24V POWERDI3333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 47nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 2385pF @ 6V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta)
• Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 15A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8
• Package / Case: 8-PowerVDFN

package: 8-PowerVDFN

DMN2046U-13

Diodes Incorporated

MOSFET N-CH 20V 3.4A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 292pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 760mW (Ta)
• Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

DMG3401LSN-7

Diodes Incorporated

MOSFET P-CH 30V 3A SC59

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1326pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-59
• Package / Case: TO-236-3, SC-59, SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

STU95N2LH5

STMicroelectronics

MOSFET N-CH 25V 80A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1817pF @ 25V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 70W (Tc)
• Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

package: TO-251-3 Short Leads, IPak, TO-251AA

RCJ300N20TL

Rohm Semiconductor

MOSFET N-CH 200V 30A LPTS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
• Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LPTS
• Package / Case: SC-83

package: SC-83

DMG4710SSS-13

Diodes Incorporated

MOSFET N-CH 30V 12.7A 8SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1849pF @ 15V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 1.54W (Ta)
• Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 11.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

package: 8-SOIC (0.154", 3.90mm Width)

IRFB7437PBF

Infineon Technologies

MOSFET N CH 40V 195A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7330pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

package: TO-220-3

FDMA7670

Fairchild/ON Semiconductor

MOSFET N-CH 30V 6-MLP 2X2

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.4W (Ta)
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-MicroFET (2x2)
• Package / Case: 6-VDFN Exposed Pad

package: 6-VDFN Exposed Pad

STW48N60M2

STMicroelectronics

MOSFET N-CH 600V 42A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3060pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 21A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

package: TO-247-3

STP36NF06L

STMicroelectronics

MOSFET N-CH 60V 30A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
• Vgs (Max): ±18V
• FET Feature: -
• Power Dissipation (Max): 70W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

package: TO-220-3

IRFR9024PBF-BE3

Vishay Siliconix

P-CHANNEL 60V

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

package: -

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STF7N65M6

STMicroelectronics

MOSFET N-CH 650V 5A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.75V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 20W (Tc)
• Rds On (Max) @ Id, Vgs: 990mOhm @ 2.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

package: -

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MCU45P04A-TP

Micro Commercial Co

Interface

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 45A
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 57.1 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2539 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 65W
• Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

package: -

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PJA3402_R1_00001

Panjit International Inc.

SOT-23, MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.25W (Ta)
• Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

package: -

STF24N60M6

STMicroelectronics

MOSFET N-CH 600V TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.75V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

package: -

SIR104LDP-T1-RE3

Vishay Siliconix

MOSFET N-CH 100V 18.8A/81A PPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
• Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

package: -

DMP31D1UFB4Q-7B

Diodes Incorporated

MOSFET BVDSS: 8V~24V X2-DFN1006-

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 15 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN1006-3
• Package / Case: 3-XFDFN

package: -

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DMP2037U-13

Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 1

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds: 803 pF @ 10 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 800mW
• Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

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EPC2207

EPC

TRANS GAN 200V DIE .022OHM

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

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IXFT15N100Q3-TRL

IXYS

MOSFET N-CH 1000V 15A TO268

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 690W (Tc)
• Rds On (Max) @ Id, Vgs: 1.05Ohm @ 7.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

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XP10TN135H

YAGEO XSEMI

MOSFET N-CH 100V 8.1A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 20.8W (Tc)
• Rds On (Max) @ Id, Vgs: 135mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

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