Afbeelding |
Onderdeelnummer |
Fabrikant |
Omschrijving |
package |
Voorraad |
Aantal |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 43A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad3.408 |
|
MOSFET (Metal Oxide) | 30V | 43A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 780pF @ 15V | ±20V | - | 40W (Tc) | 13.8 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 100V 1.1A SOT-223
|
package: TO-261-4, TO-261AA |
Voorraad5.472 |
|
MOSFET (Metal Oxide) | 100V | 1.1A (Ta) | 4.5V, 10V | 1.8V @ 400µA | 17.2nC @ 10V | 364pF @ 25V | ±20V | - | 1.79W (Ta) | 700 mOhm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 55V 80A TO-220
|
package: TO-220-3 |
Voorraad64.380 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 2V @ 150µA | 130nC @ 10V | 4210pF @ 25V | ±20V | - | 210W (Tc) | 7 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 32A DIRECTFET
|
package: DirectFET? Isometric MX |
Voorraad7.320 |
|
MOSFET (Metal Oxide) | 30V | 32A (Ta), 150A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 56nC @ 4.5V | 4860pF @ 15V | ±20V | - | 3.9W (Ta), 89W (Tc) | 2.6 mOhm @ 27A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
||
Infineon Technologies |
MOSFET N-CH 30V 13.6A 8-SOIC
|
package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad221.688 |
|
MOSFET (Metal Oxide) | 30V | 13.6A (Ta) | 4.5V, 10V | 1V @ 250µA | 14nC @ 4.5V | 1010pF @ 15V | ±20V | - | 2.5W (Ta) | 9.1 mOhm @ 13A, 10V | -55°C ~ 155°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 150V 41A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad3.184 |
|
MOSFET (Metal Oxide) | 150V | 41A (Tc) | 10V | 4.5V @ 250µA | 107nC @ 10V | 2260pF @ 25V | ±30V | - | 200W (Tc) | 45 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 7A TO-220F
|
package: TO-220-3 Full Pack |
Voorraad5.968 |
|
MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 5V @ 250µA | 30nC @ 10V | 920pF @ 25V | ±30V | - | 31W (Tc) | 600 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET N-CH 500V 8A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad6.592 |
|
MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1300pF @ 25V | ±20V | - | 3.1W (Ta), 125W (Tc) | 850 mOhm @ 4.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 300V 35A TO-247AD
|
package: TO-247-3 |
Voorraad11.148 |
|
MOSFET (Metal Oxide) | 300V | 35A (Tc) | 10V | 4V @ 4mA | 200nC @ 10V | 4800pF @ 25V | ±20V | - | 300W (Tc) | 100 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 75A TO-262
|
package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad18.996 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 3V @ 250µA | 60nC @ 5V | 2880pF @ 25V | ±16V | - | 130W (Tc) | 8 mOhm @ 52A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 25V 18A 8SON
|
package: 8-PowerTDFN |
Voorraad7.328 |
|
MOSFET (Metal Oxide) | 25V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 18.3nC @ 10V | 1230pF @ 12V | ±16V | - | 2.1W (Ta), 30W (Tc) | 3.3 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 1000V 21A TO-264
|
package: TO-264-3, TO-264AA |
Voorraad80.400 |
|
MOSFET (Metal Oxide) | 1000V | 21A (Tc) | 10V | 5.5V @ 4mA | 170nC @ 10V | 6900pF @ 25V | ±20V | - | 500W (Tc) | 500 mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
||
IXYS |
MOSFET N-CH 800V 16A TO-268
|
package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Voorraad3.184 |
|
MOSFET (Metal Oxide) | 800V | 16A (Tc) | 10V | 5V @ 4mA | 71nC @ 10V | 4600pF @ 25V | ±30V | - | 460W (Tc) | 600 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
IXYS |
MOSFET N-CH 55V 110A TO-220
|
package: TO-220-3 |
Voorraad4.720 |
|
MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 5.5V @ 250µA | 76nC @ 10V | 2210pF @ 25V | ±20V | - | 390W (Tc) | 13.5 mOhm @ 500mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 300V 6.1A TO-220AB
|
package: TO-220-3 |
Voorraad222.300 |
|
MOSFET (Metal Oxide) | 300V | 6.1A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 430pF @ 25V | ±30V | - | 74W (Tc) | 750 mOhm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 30V 46A SO8FL
|
package: 8-PowerTDFN |
Voorraad7.680 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 8TDSON
|
package: 8-PowerTDFN |
Voorraad2.416 |
|
MOSFET (Metal Oxide) | 40V | 40A (Tc) | 4.5V, 10V | 2V @ 17µA | 29nC @ 10V | 1560pF @ 25V | ±16V | - | 48W (Tc) | 4.8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 120V 8MLP
|
package: 8-PowerTDFN |
Voorraad6.688 |
|
MOSFET (Metal Oxide) | 120V | 13.5A (Ta) | 6V, 10V | 4V @ 250µA | 64nC @ 10V | 4250pF @ 60V | ±20V | - | 2.7W (Ta), 156W (Tc) | 7.2 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N-CH 600V 20A TO-220
|
package: TO-220-3 |
Voorraad157.944 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 5V @ 250µA | 54nC @ 10V | 1500pF @ 25V | ±30V | - | 192W (Tc) | 290 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 20V 80A TDSON-8
|
package: 8-PowerTDFN |
Voorraad324.060 |
|
MOSFET (Metal Oxide) | 20V | 19A (Ta), 80A (Tc) | 2.5V, 4.5V | 1.2V @ 110µA | 27.6nC @ 4.5V | 4100pF @ 10V | ±12V | - | 2.8W (Ta), 48W (Tc) | 4.6 mOhm @ 50A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 30V 13A 8SOIC
|
package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad9.693.804 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 3V @ 250µA | 100nC @ 10V | 3939pF @ 15V | ±25V | - | 2.5W (Ta) | 9 mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Microchip Technology |
MOSFET P-CH 30V 650MA TO92-3
|
package: TO-226-3, TO-92-3 (TO-226AA) |
Voorraad10.560 |
|
MOSFET (Metal Oxide) | 30V | 650mA (Tj) | 4.5V, 10V | 3.5V @ 10mA | - | 300pF @ 25V | ±20V | - | 740mW (Ta) | 600 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Infineon Technologies |
MOSFET N-CH 55V 75A TO-262
|
package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad10.284 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 4780pF @ 25V | ±20V | - | 230W (Tc) | 4.9 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Rohm Semiconductor |
MOSFET P-CH 100V 13A SOT428
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad10.296 |
|
MOSFET (Metal Oxide) | 100V | 13A (Ta) | 4V, 10V | - | - | - | ±20V | - | 20W (Ta) | - | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
NCH 30V 9.5A MIDDLE POWER MOSFET
|
package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad6.112 |
|
MOSFET (Metal Oxide) | 30V | 9.5A (Ta) | 10V | 2.5V @ 1mA | 8.3nC @ 4.5V | 680pF @ 15V | ±20V | - | 2W (Tc) | 14.6 mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Diodes Incorporated |
MOSFET N-CH 30V 8A 8-SO
|
package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad359.760 |
|
MOSFET (Metal Oxide) | 30V | 8A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 18.5nC @ 10V | 1849pF @ 15V | ±12V | Schottky Diode (Body) | 1.54W (Ta) | 15 mOhm @ 10.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
IXYS |
MOSFET N-CH 800V 53A SOT-227B
|
package: SOT-227-4, miniBLOC |
Voorraad4.304 |
|
MOSFET (Metal Oxide) | 800V | 53A | 10V | 5V @ 8mA | 250nC @ 10V | 18000pF @ 25V | ±30V | - | 1040W (Tc) | 140 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 40V 14.9A 8SOIC
|
package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad30.000 |
|
MOSFET (Metal Oxide) | 40V | 14.9A (Ta) | 4.5V, 10V | 3V @ 250µA | 73nC @ 10V | 3845pF @ 15V | ±20V | - | 2.5W (Ta) | 7 mOhm @ 14.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Nexperia USA Inc. |
MOSFET N-CH 60V 44A LFPAK
|
package: SC-100, SOT-669 |
Voorraad5.232 |
|
MOSFET (Metal Oxide) | 60V | 44A (Tc) | 10V | 4V @ 1mA | 20nC @ 10V | 1172pF @ 30V | ±20V | - | 74W (Tc) | 15.7 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Nexperia USA Inc. |
MOSFET N-CH 20V 1.05A SOT23
|
package: TO-236-3, SC-59, SOT-23-3 |
Voorraad369.936 |
|
MOSFET (Metal Oxide) | 20V | 1.05A (Ta) | 1.8V, 4.5V | 570mV @ 1mA | 3.9nC @ 4.5V | 152pF @ 16V | ±8V | - | 417mW (Ta) | 200 mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |