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GeneSiC Semiconductor |
TRANS SJT 650V 7A TO-257
- FET Type: -
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc) (165°C)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 35V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 170 mOhm @ 7A
- Operating Temperature: -55°C ~ 225°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-257
- Package / Case: TO-257-3
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package: TO-257-3 |
Voorraad3.536 |
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GeneSiC Semiconductor |
DIODE FAST REC 400V 70A D67
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 90ns
- Current - Reverse Leakage @ Vr: 25µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -55°C ~ 155°C
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package: D-67 |
Voorraad4.944 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 40V 300A D67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 300A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -55°C ~ 150°C
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package: D-67 |
Voorraad6.240 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 20V 300A D67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 300A
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -55°C ~ 150°C
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package: D-67 |
Voorraad4.384 |
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GeneSiC Semiconductor |
DIODE MODULE 45V 150A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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package: D-67 |
Voorraad6.464 |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 1.2KV DO205AB
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 400A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-205AB, DO-9
- Operating Temperature - Junction: -60°C ~ 200°C
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package: DO-205AB, DO-9, Stud |
Voorraad2.224 |
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GeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 320A DO205
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 320A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-205AB, DO-9
- Operating Temperature - Junction: -60°C ~ 180°C
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package: DO-205AB, DO-9, Stud |
Voorraad7.056 |
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GeneSiC Semiconductor |
DIODE GEN REV 400V 150A DO205AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 9mA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -60°C ~ 200°C
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package: DO-205AA, DO-8, Stud |
Voorraad4.960 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 25V 25A DO4
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 25V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 25A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -55°C ~ 150°C
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package: DO-203AA, DO-4, Stud |
Voorraad13.860 |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 70A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -55°C ~ 150°C
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package: DO-203AB, DO-5, Stud |
Voorraad4.704 |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 70A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 70A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 25µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -40°C ~ 125°C
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package: DO-203AB, DO-5, Stud |
Voorraad3.376 |
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GeneSiC Semiconductor |
DIODE GEN PURP 1.4KV 25A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 60A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 1400V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -40°C ~ 180°C
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package: DO-203AA, DO-4, Stud |
Voorraad5.280 |
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GeneSiC Semiconductor |
DIODE GEN PURP 200V 16A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 25µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 150°C
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package: DO-203AA, DO-4, Stud |
Voorraad6.640 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY REV 60V DO4
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 35A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.5mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -55°C ~ 150°C
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package: DO-203AA, DO-4, Stud |
Voorraad7.088 |
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GeneSiC Semiconductor |
DIODE GEN PURP 100V 150A TO244
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 150A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25µA @ 100V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: TO-244AB
- Supplier Device Package: TO-244
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package: TO-244AB |
Voorraad6.912 |
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GeneSiC Semiconductor |
DIODE GEN PURP 100V 150A TO244
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 150A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25µA @ 100V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: TO-244AB
- Supplier Device Package: TO-244
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package: TO-244AB |
Voorraad4.896 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 20V 400A 3TOWER
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io) (per Diode): 400A
- Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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package: Three Tower |
Voorraad7.632 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 20V 300A 3TOWER
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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package: Three Tower |
Voorraad5.072 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 250A TO244AB
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io) (per Diode): 250A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 150V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: TO-244AB
- Supplier Device Package: TO-244AB
|
package: TO-244AB |
Voorraad2.016 |
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GeneSiC Semiconductor |
DIODE GEN 1.2KV 300A 3 TOWER
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 2.6V @ 300A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
|
package: Three Tower |
Voorraad2.912 |
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GeneSiC Semiconductor |
DIODE MODULE 40V 300A 3TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io) (per Diode): 300A (DC)
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
|
package: Three Tower |
Voorraad4.848 |
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GeneSiC Semiconductor |
DIODE MODULE 100V 100A 3TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 100A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
|
package: Three Tower |
Voorraad3.952 |
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GeneSiC Semiconductor |
DIODE MODULE 100V 300A 2TOWER
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 300A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 90ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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package: Twin Tower |
Voorraad7.952 |
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GeneSiC Semiconductor |
DIODE MODULE 1.4KV 200A 3TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io) (per Diode): 200A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
|
package: Three Tower |
Voorraad3.152 |
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GeneSiC Semiconductor |
DIODE MODULE 100V 100A 2TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 100A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
|
package: Twin Tower |
Voorraad6.000 |
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|
|
GeneSiC Semiconductor |
DIODE MODULE 30V 300A 3TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io) (per Diode): 300A (DC)
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
|
package: Three Tower |
Voorraad5.408 |
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GeneSiC Semiconductor |
DIODE MODULE 30V 100A TO249AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io) (per Diode): 100A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 20V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: TO-249AB
- Supplier Device Package: TO-249AB
|
package: TO-249AB |
Voorraad6.384 |
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|
|
GeneSiC Semiconductor |
DIODE BRIDGE 1000V 2A KBPM
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1000V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBPM
- Supplier Device Package: KBPM
|
package: 4-SIP, KBPM |
Voorraad4.720 |
|
|
|
GeneSiC Semiconductor |
DIODE BRIDGE 200V 10A BR-10
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Square, BR-10
- Supplier Device Package: BR-10
|
package: 4-Square, BR-10 |
Voorraad4.080 |
|
|
|
GeneSiC Semiconductor |
DIODE BRIDGE 400V 6A KBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBU
- Supplier Device Package: KBU
|
package: 4-SIP, KBU |
Voorraad2.416 |
|