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GeneSiC Semiconductor |
DIODE SCHOTTKY 20V 300A D67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 300A
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -55°C ~ 150°C
|
package: D-67 |
Voorraad5.472 |
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GeneSiC Semiconductor |
DIODE MODULE 200V 200A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -55°C ~ 150°C
|
package: D-67 |
Voorraad2.640 |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 1KV DO205AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -65°C ~ 200°C
|
package: DO-205AA, DO-8, Stud |
Voorraad3.152 |
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GeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 100A DO205
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 9mA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -40°C ~ 200°C
|
package: DO-205AA, DO-8, Stud |
Voorraad3.920 |
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|
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GeneSiC Semiconductor |
DIODE SCHOTTKY REV 30V DO5
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 75A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 75A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -55°C ~ 150°C
|
package: DO-203AB, DO-5, Stud |
Voorraad4.640 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 30V 15A DO5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 470mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 150°C
|
package: DO-203AB, DO-5, Stud |
Voorraad6.672 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 20V 15A DO5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 440mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 150°C
|
package: DO-203AB, DO-5, Stud |
Voorraad3.616 |
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GeneSiC Semiconductor |
DIODE GEN PURP 1.4KV 85A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 150°C
|
package: DO-203AB, DO-5, Stud |
Voorraad3.200 |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 500V 15A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 500V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 175°C
|
package: DO-203AB, DO-5, Stud |
Voorraad4.944 |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 35A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 190°C
|
package: DO-203AB, DO-5, Stud |
Voorraad5.680 |
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GeneSiC Semiconductor |
DIODE GEN PURP 800V 95A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 95A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -40°C ~ 180°C
|
package: DO-203AB, DO-5, Stud |
Voorraad2.992 |
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GeneSiC Semiconductor |
DIODE GEN PURP 800V 6A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 150°C
|
package: DO-203AA, DO-4, Stud |
Voorraad6.912 |
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GeneSiC Semiconductor |
DIODE GEN PURP 1000V 12A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 175°C
|
package: DO-203AA, DO-4, Stud |
Voorraad3.296 |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 200V 12A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 200°C
|
package: DO-203AB, DO-5, Stud |
Voorraad5.728 |
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GeneSiC Semiconductor |
DIODE GEN PURP 400V 70A TO249AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io) (per Diode): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 85ns
- Current - Reverse Leakage @ Vr: 25µA @ 400V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: TO-249AB
- Supplier Device Package: TO-249AB
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package: TO-249AB |
Voorraad4.640 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 35V 250A TO244AB
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io) (per Diode): 250A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 35V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: TO-244AB
- Supplier Device Package: TO-244AB
|
package: TO-244AB |
Voorraad4.048 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 100V 200A TO244AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 200A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 100V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: TO-244AB
- Supplier Device Package: TO-244AB
|
package: TO-244AB |
Voorraad2.672 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 35V 300A 3 TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 35V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
|
package: Three Tower |
Voorraad3.008 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 150A 3 TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io) (per Diode): 150A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 45V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
|
package: Three Tower |
Voorraad6.016 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 40V 150A 3 TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io) (per Diode): 150A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 40V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
|
package: Three Tower |
Voorraad7.168 |
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|
GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 300A 2 TOWER
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 150V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
|
package: Twin Tower |
Voorraad2.784 |
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|
|
GeneSiC Semiconductor |
DIODE MODULE 600V 600A 3TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io) (per Diode): 600A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 280ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
|
package: Three Tower |
Voorraad3.088 |
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|
|
GeneSiC Semiconductor |
DIODE MODULE 100V 300A 2TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
|
package: Twin Tower |
Voorraad3.088 |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 80V 500A 2TOWER
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 500A (DC)
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
|
package: Twin Tower |
Voorraad7.328 |
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|
|
GeneSiC Semiconductor |
DIODE MODULE 60V 400A 3TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io) (per Diode): 400A (DC)
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
|
package: Three Tower |
Voorraad2.896 |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 80V 200A 2TOWER
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 200A (DC)
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
|
package: Twin Tower |
Voorraad5.984 |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 60A 3 TOWER
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io) (per Diode): 60A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 150V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
|
package: Three Tower |
Voorraad3.280 |
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|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 80V 160A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 160A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 160A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 80V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
|
package: SOT-227-4, miniBLOC |
Voorraad3.872 |
|
|
|
GeneSiC Semiconductor |
DIODE BRIDGE 1000V 50A GBPC-T/W
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1000V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 4-Square, GBPC
- Supplier Device Package: GBPC
|
package: 4-Square, GBPC |
Voorraad5.984 |
|
|
|
GeneSiC Semiconductor |
DIODE BRIDGE 100V 8A BR-8
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 100V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Operating Temperature: -65°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Square, BR-8
- Supplier Device Package: BR-8
|
package: 4-Square, BR-8 |
Voorraad16.704 |
|