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IXYS |
IGBT 600V 56A 190W TO247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 56A
- Current - Collector Pulsed (Icm): 130A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
- Power - Max: 190W
- Switching Energy: 400µJ (on), 300µJ (off)
- Input Type: Standard
- Gate Charge: 64nC
- Td (on/off) @ 25°C: 21ns/143ns
- Test Condition: 360V, 24A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 25ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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package: TO-247-3 |
Voorraad3.344 |
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IXYS |
IGBT 600V 60A 150W TO247AD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 80A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 31A
- Power - Max: 150W
- Switching Energy: 6mJ (off)
- Input Type: Standard
- Gate Charge: 80nC
- Td (on/off) @ 25°C: 15ns/400ns
- Test Condition: 480V, 31A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 25ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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package: TO-247-3 |
Voorraad390.000 |
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IXYS |
IGBT 900V 40A 100W ISOPLUS247
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 900V
- Current - Collector (Ic) (Max): 40A
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 50A
- Power - Max: 100W
- Switching Energy: 4.7mJ (off)
- Input Type: Standard
- Gate Charge: 135nC
- Td (on/off) @ 25°C: 20ns/350ns
- Test Condition: 720V, 50A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 200ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247?
- Supplier Device Package: ISOPLUS247?
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package: ISOPLUS247? |
Voorraad6.032 |
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IXYS |
IGBT 600V 460W TO247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 400A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
- Power - Max: 460W
- Switching Energy: 1.5mJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 168nC
- Td (on/off) @ 25°C: 25ns/138ns
- Test Condition: 480V, 50A, 3 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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package: TO-247-3 |
Voorraad5.104 |
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IXYS |
IGBT 1200V 5A 25W TO252AA
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 5A
- Current - Collector Pulsed (Icm): 8A
- Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 5A
- Power - Max: 25W
- Switching Energy: 600µJ (off)
- Input Type: Standard
- Gate Charge: 9nC
- Td (on/off) @ 25°C: 15ns/300ns
- Test Condition: 960V, 2A, 150 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
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package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad5.136 |
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IXYS |
IGBT 1600V 5.7A 68W TO220AB
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1600V
- Current - Collector (Ic) (Max): 5.7A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 7.2V @ 15V, 3A
- Power - Max: 68W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 26nC
- Td (on/off) @ 25°C: -
- Test Condition: 960V, 3A, 47 Ohm, 10V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-247AD
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package: TO-220-3 |
Voorraad4.336 |
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IXYS |
IGBT 1200V 86A 480W TO247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 86A
- Current - Collector Pulsed (Icm): 180A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
- Power - Max: 480W
- Switching Energy: 2.7mJ (on), 1.6mJ (off)
- Input Type: Standard
- Gate Charge: 87nC
- Td (on/off) @ 25°C: 22ns/177ns
- Test Condition: 600V, 40A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 100ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXYH)
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package: TO-247-3 |
Voorraad7.584 |
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IXYS |
MOSFET N-CH 500V 40A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 560W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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package: TO-247-3 |
Voorraad434.760 |
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IXYS |
MOSFET N-CH 600V 30A PLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 540W (Tc)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS220
- Package / Case: TO-220-3, Short Tab
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package: TO-220-3, Short Tab |
Voorraad7.056 |
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IXYS |
MOSFET N-CH 1000V 30A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8200pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 735W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
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package: TO-264-3, TO-264AA |
Voorraad3.872 |
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IXYS |
MOSFET N-CH 500V 44A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 44A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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package: SOT-227-4, miniBLOC |
Voorraad6.592 |
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IXYS |
MOSFET P-CH 150V 36A TO-247
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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package: TO-247-3 |
Voorraad2.544 |
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IXYS |
MOSFET N-CH 200V 50A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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package: TO-3P-3, SC-65-3 |
Voorraad3.520 |
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IXYS |
MOSFET N-CH 75V 70A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2725pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad103.464 |
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IXYS |
MOSFET N-CH TO-251
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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package: TO-251-3 Short Leads, IPak, TO-251AA |
Voorraad2.912 |
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IXYS |
MOSFET N-CH 500V 26A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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package: TO-3P-3, SC-65-3 |
Voorraad43.152 |
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IXYS |
850V/90A ULT JUNC X-C HIPERFET P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 850V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13300pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1200W (Tc)
- Rds On (Max) @ Id, Vgs: 41 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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package: SOT-227-4, miniBLOC |
Voorraad4.992 |
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IXYS |
MOSFET N-CH 100V 180A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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package: TO-3P-3, SC-65-3 |
Voorraad6.876 |
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IXYS |
MOSFET P-CH 100V 90A TO-247
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 462W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 45A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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package: TO-247-3 |
Voorraad14.856 |
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IXYS |
SCR THRYRISTOR CA 1400V WC-500
- Structure: Common Anode - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 545A
- Current - On State (It (RMS)) (Max): 1294A
- Voltage - Gate Trigger (Vgt) (Max): 3V
- Current - Gate Trigger (Igt) (Max): 300mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
- Current - Hold (Ih) (Max): 1A
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: WC-500
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package: WC-500 |
Voorraad5.152 |
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IXYS |
RECT BRIDGE 1PH 1600V FO-F-A
- Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
- Number of SCRs, Diodes: 2 SCRs, 2 Diodes
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 36A
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): 1V
- Current - Gate Trigger (Igt) (Max): 65mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 320A, 350A
- Current - Hold (Ih) (Max): 100mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-F-A
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package: FO-F-A |
Voorraad6.272 |
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IXYS |
DIODE GEN PURP 800V 10A TO252
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
- Operating Temperature - Junction: -55°C ~ 175°C
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package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad5.280 |
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IXYS |
DIODE MODULE 1.2KV 36A TO240AA
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 36A
- Voltage - Forward (Vf) (Max) @ If: 1.38V @ 80A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 1200V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
- Supplier Device Package: TO-240AA
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package: TO-240AA |
Voorraad7.888 |
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IXYS |
RECT BRIDGE 3PH 140A 1600V PWS-C
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 140A
- Voltage - Forward (Vf) (Max) @ If: 1.09V @ 40A
- Current - Reverse Leakage @ Vr: 100µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-C
- Supplier Device Package: PWS-C
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package: PWS-C |
Voorraad3.632 |
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IXYS |
RECT BRIDGE 3PH 38A 800V PWS-A
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 38A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
- Current - Reverse Leakage @ Vr: 40µA @ 800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-A
- Supplier Device Package: PWS-A
|
package: PWS-A |
Voorraad3.392 |
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IXYS |
RECT BRIDGE 3PH 1200V ECO-PAC1
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 68A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
- Current - Reverse Leakage @ Vr: 40µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC1
- Supplier Device Package: ECO-PAC1
|
package: ECO-PAC1 |
Voorraad5.136 |
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IXYS |
RECT BRIDGE 3PH 38A 1800V PWS-A
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1800V
- Current - Average Rectified (Io): 38A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
- Current - Reverse Leakage @ Vr: 40µA @ 1800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-A
- Supplier Device Package: PWS-A
|
package: PWS-A |
Voorraad5.968 |
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IXYS |
IC GATE DRIVER SGL 14A 8-DIP
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 1V, 2.5V
- Current - Peak Output (Source, Sink): 14A, 14A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 22ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
|
package: 8-DIP (0.300", 7.62mm) |
Voorraad3.424 |
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IXYS |
IC DRVR MOSF/IGBT 30A TO220-5
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 8.5 V ~ 35 V
- Logic Voltage - VIL, VIH: 0.8V, 3.5V
- Current - Peak Output (Source, Sink): 30A, 30A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 18ns, 16ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-5
- Supplier Device Package: TO-220-5
|
package: TO-220-5 |
Voorraad7.872 |
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IXYS |
IC CURRENT MONITOR 0.7% 8SOIC
- Function: Current Monitor
- Sensing Method: High-Side
- Accuracy: ±0.7%
- Voltage - Input: 2.7 V ~ 40 V
- Current - Output: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad4.800 |
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