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Infineon Technologies |
IGBT 600V 80A 306W TO247AC
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 80A
- Current - Collector Pulsed (Icm): 105A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 35A
- Power - Max: 306W
- Switching Energy: 300µJ (on), 630µJ (off)
- Input Type: Standard
- Gate Charge: 75nC
- Td (on/off) @ 25°C: 40ns/105ns
- Test Condition: 400V, 35A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 50ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
|
package: TO-247-3 |
Voorraad2.848 |
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Infineon Technologies |
IGBT 600V 31A 100W TO247AC
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 31A
- Current - Collector Pulsed (Icm): 120A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
- Power - Max: 100W
- Switching Energy: 230µJ (on), 1.18mJ (off)
- Input Type: Standard
- Gate Charge: 51nC
- Td (on/off) @ 25°C: 21ns/200ns
- Test Condition: 480V, 17A, 23 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
|
package: TO-247-3 |
Voorraad23.400 |
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Infineon Technologies |
IGBT 600V 28A 100W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 28A
- Current - Collector Pulsed (Icm): 56A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
- Power - Max: 100W
- Switching Energy: 600µJ (on), 580µJ (off)
- Input Type: Standard
- Gate Charge: 67nC
- Td (on/off) @ 25°C: 60ns/160ns
- Test Condition: 480V, 16A, 23 Ohm, 15V
- Reverse Recovery Time (trr): 42ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad6.800 |
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Infineon Technologies |
MOSFET N-CH 75V 13A 8-PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2474pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 105W (Tc)
- Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 43A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (5x6)
- Package / Case: 8-PowerVDFN
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package: 8-PowerVDFN |
Voorraad367.128 |
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Infineon Technologies |
MOSFET N-CH 30V 22A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 31W (Tc)
- Rds On (Max) @ Id, Vgs: 14.9 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad3.296 |
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Infineon Technologies |
MOSFET N-CH 100V 35A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 91W (Tc)
- Rds On (Max) @ Id, Vgs: 28.5 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad7.760 |
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Infineon Technologies |
MOSFET N-CH 55V 33A TO220-5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Temperature Sensing Diode
- Power Dissipation (Max): 120W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 12A, 10V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: P-TO220-5
- Package / Case: TO-220-5
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package: TO-220-5 |
Voorraad6.016 |
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Infineon Technologies |
MOSFET N-CH 25V 29A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4260pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 29A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MX
- Package / Case: DirectFET? Isometric MX
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package: DirectFET? Isometric MX |
Voorraad15.600 |
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Infineon Technologies |
MOSFET N-CH 75V 130A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad7.104 |
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Infineon Technologies |
MOSFET N-CH 25V 50A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: P-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad6.848 |
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Infineon Technologies |
MOSFET N-CH 60V 31A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 255W (Tc)
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 18A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad3.504 |
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Infineon Technologies |
MOSFET N-CH TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 290µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 400V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 72W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad2.304 |
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Infineon Technologies |
IC AMP RF LDMOS
- Transistor Type: LDMOS
- Frequency: 2.2GHz
- Gain: 17dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 240mA
- Power - Output: 16W
- Voltage - Rated: 65V
- Package / Case: H-37248-4
- Supplier Device Package: H-37248-4
|
package: H-37248-4 |
Voorraad6.720 |
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Infineon Technologies |
MOSFET 2N-CH 30V 15A DIRECTFET
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A
- Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
- Power - Max: 2.7W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DirectFET? Isometric MA
- Supplier Device Package: DIRECTFET? MA
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package: DirectFET? Isometric MA |
Voorraad2.160 |
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Infineon Technologies |
MOSFET 2N-CH 20V 1.5A 6TSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: PG-TSOP6-6
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package: SOT-23-6 Thin, TSOT-23-6 |
Voorraad5.568 |
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Infineon Technologies |
TRANS NPN 45V 1A SOT-223
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 2W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
|
package: TO-261-4, TO-261AA |
Voorraad12.864 |
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Infineon Technologies |
IC PWR HYBRID 600V 20A SIP3
- Type: IGBT
- Configuration: 3 Phase
- Current: 20A
- Voltage: 600V
- Voltage - Isolation: 2000Vrms
- Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
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package: 22-PowerSIP Module, 18 Leads, Formed Leads |
Voorraad17.472 |
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Infineon Technologies |
DIODE GEN PURPOSE SAWN WAFER
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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package: - |
Voorraad4.832 |
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Infineon Technologies |
IC SWITCH HISIDE SMART TO220-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 4.7 V ~ 42 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 1.8A
- Rds On (Typ): 190 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart, Status Flag
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -30°C ~ 85°C (TA)
- Package / Case: TO-220-5 Formed Leads
- Supplier Device Package: PG-TO220-5-3
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package: TO-220-5 Formed Leads |
Voorraad3.664 |
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Infineon Technologies |
IC HIGH SIDE PWR SWITCH PDSO-14
- Switch Type: General Purpose
- Number of Outputs: 2
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 4.5 V ~ 28 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 1.8A
- Rds On (Typ): 140 mOhm (Max)
- Input Type: Non-Inverting
- Features: Auto Restart, Status Flag
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: P-DSO-14
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package: 14-SOIC (0.154", 3.90mm Width) |
Voorraad207.252 |
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Infineon Technologies |
IC SW SMART LOW SIDE TO252-3-11
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 60V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 3.6A
- Rds On (Typ): 46 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3-11
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad5.104 |
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Infineon Technologies |
IC SWITCH HISIDE 70VQFN
- Switch Type: General Purpose
- Number of Outputs: 8
- Ratio - Input:Output: 1:8
- Output Configuration: High Side
- Output Type: P-Channel
- Interface: SPI, Parallel
- Voltage - Load: 11 V ~ 35 V
- Voltage - Supply (Vcc/Vdd): 2.75 V ~ 3.6 V
- Current - Output (Max): -
- Rds On (Typ): 210 mOhm
- Input Type: -
- Features: -
- Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 70-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-70-2
|
package: 70-VFQFN Exposed Pad |
Voorraad6.864 |
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Infineon Technologies |
IC HIGH SIDE PWR SWITCH T0263-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 4.75 V ~ 41 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 8.8A
- Rds On (Typ): 35 mOhm
- Input Type: -
- Features: -
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
- Supplier Device Package: PG-TO263-5-2
|
package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
Voorraad13.800 |
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Infineon Technologies |
IC MCU 16BIT 320KB FLASH 100LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 80MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 75
- Program Memory Size: 320KB (320K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 34K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-100-8
|
package: 100-LQFP Exposed Pad |
Voorraad5.472 |
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Infineon Technologies |
IC MCU 16BIT 64KB OTP 80MQFP
- Core Processor: C166
- Core Size: 16-Bit
- Speed: 25MHz
- Connectivity: CAN, EBI/EMI, SPI, SSC, UART/USART
- Peripherals: POR, PWM, WDT
- Number of I/O: 59
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: OTP
- EEPROM Size: -
- RAM Size: 4K x 8
- Voltage - Supply (Vcc/Vdd): 4.75 V ~ 5.5 V
- Data Converters: A/D 8x10b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 80-QFP
- Supplier Device Package: 80-MQFP (14x14)
|
package: 80-QFP |
Voorraad3.664 |
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|
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Infineon Technologies |
IC TIRE PRESSURE SENSOR PDSO-14
- Sensor Type: -
- Output Type: -
- Operating Temperature: -
|
package: - |
Voorraad8.964 |
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Infineon Technologies |
SPEED SENSORS 2SSO
- Function: -
- Technology: -
- Polarization: -
- Sensing Range: -
- Test Condition: -
- Voltage - Supply: -
- Current - Supply (Max): -
- Current - Output (Max): -
- Output Type: -
- Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
|
package: - |
Voorraad5.886 |
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|
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Infineon Technologies |
IC SWITCH RF 20TSNP
- Frequency - Lower: -
- Frequency - Upper: -
- Isolation @ Frequency: -
- Insertion Loss @ Frequency: -
- IIP3: -
- Topology: -
- Circuit: -
- P1dB: -
- Features: -
- Impedance: -
- Operating Temperature: -
- Voltage - Supply: -
- RF Type: -
- Package / Case: -
- Supplier Device Package: -
|
package: - |
Voorraad8.946 |
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|
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Infineon Technologies |
IC REGULATOR PG-VQFN-56-901
- Applications: -
- Voltage - Input: -
- Number of Outputs: -
- Voltage - Output: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
package: - |
Voorraad7.008 |
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|
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Infineon Technologies |
IC MCU 32BIT 512KB FLASH 100TQFP
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
package: - |
Voorraad3.120 |
|