Infineon Technologies Producten

IRGS4620DTRRPBF

Infineon Technologies

IGBT 600V 32A 140W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 32A
• Current - Collector Pulsed (Icm): 36A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
• Power - Max: 140W
• Switching Energy: 75µJ (on), 225µJ (off)
• Input Type: Standard
• Gate Charge: 25nC
• Td (on/off) @ 25°C: 31ns/83ns
• Test Condition: 400V, 12A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 68ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IGP01N120H2XKSA1

Infineon Technologies

IGBT 1200V 3.2A 28W TO220-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 3.2A
• Current - Collector Pulsed (Icm): 3.5A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
• Power - Max: 28W
• Switching Energy: 140µJ
• Input Type: Standard
• Gate Charge: 8.6nC
• Td (on/off) @ 25°C: 13ns/370ns
• Test Condition: 800V, 1A, 241 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3

package: TO-220-3

IRG7PH46UD-EP

Infineon Technologies

IGBT 1200V 108A COPAK247

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
• Power - Max: 390W
• Switching Energy: 2.61mJ (on), 1.85mJ (off)
• Input Type: Standard
• Gate Charge: 220nC
• Td (on/off) @ 25°C: 45ns/410ns
• Test Condition: 600V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 140ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

package: TO-247-3

IRF7523D1TRPBF

Infineon Technologies

MOSFET N-CH 30V 2.7A MICRO8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 1.25W (Ta)
• Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Micro8?
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

IRF5305LPBF

Infineon Technologies

MOSFET P-CH 55V 31A TO-262

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

package: TO-262-3 Long Leads, I2Pak, TO-262AA

64-2092PBF

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 170W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRLZ44ZLPBF

Infineon Technologies

MOSFET N-CH 55V 51A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 80W (Tc)
• Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 31A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

package: TO-262-3 Long Leads, I2Pak, TO-262AA

BSZ017NE2LS5IATMA1

Infineon Technologies

MOSFET N-CH 25V 27A 8SON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 12V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
• Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSDSON-8-FL
• Package / Case: 8-PowerTDFN

package: 8-PowerTDFN

IPN60R600P7SATMA1

Infineon Technologies

CONSUMER

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

package: -

BCR185WH6327XTSA1

Infineon Technologies

TRANS PREBIAS PNP 0.25W SOT323-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

package: SC-70, SOT-323

BAV70WH6433XTMA1

Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT323

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 150nA @ 70V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

package: SC-70, SOT-323

IR2161PBF

Infineon Technologies

IC HALOGEN CONVERTER CTLR 8-DIP

• Type: Halogen Controller
• Frequency: 34kHz ~ 70kHz
• Voltage - Supply: 11.5 V ~ 16.5 V
• Current - Supply: 10mA
• Current - Output Source/Sink: -
• Dimming: Yes
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

package: 8-DIP (0.300", 7.62mm)

IRS21956STRPBF

Infineon Technologies

IC DVR HI/LOW SIDE 600V 20SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 3.5V
• Current - Peak Output (Source, Sink): 500mA, 500mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 25ns, 15ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SOIC

package: 20-SOIC (0.295", 7.50mm Width)

ADM6996MX-AD-T-1

Infineon Technologies

IC SWITCH ETHER 5PORT 128-FQFP

• Protocol: Ethernet
• Function: Switch
• Interface: Parallel
• Standards: 10/100 Base-T/TX PHY
• Voltage - Supply: 2.8 V ~ 3.465 V
• Current - Supply: -
• Operating Temperature: 0°C ~ 115°C
• Package / Case: 128-BFQFP
• Supplier Device Package: PG-BFQFP-128

package: 128-BFQFP

BGA711L7E6327XTSA1

Infineon Technologies

IC AMP MMIC LNA LP TSLP7-1

• Frequency: 1.9GHz, 2.1GHz
• P1dB: -8dBm (0.2mW)
• Gain: 17dB
• Noise Figure: 1.1dB
• RF Type: UMTS
• Voltage - Supply: 2.6 V ~ 3 V
• Current - Supply: 3.6mA
• Test Frequency: 2.1GHz
• Package / Case: 6-XFDFN Exposed Pad
• Supplier Device Package: TSLP-7-1

package: 6-XFDFN Exposed Pad

PVAZ172NS-TPBF

Infineon Technologies

IC RELAY PHOTOVO 60V 1.0A 8-SMD

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 500 mOhm
• Load Current: 1A
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 60 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 8-SMD (0.300", 7.62mm) 4 Leads
• Supplier Device Package: 8-SMT Modified
• Relay Type: Relay

package: 8-SMD (0.300", 7.62mm) 4 Leads

FZ1600R17KF6CB2NOSA1

Infineon Technologies

FZ1600R17KF6C_B2 - 1700V IGBT MO

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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PEB3264FV1-4

Infineon Technologies

SLIC FILTER

• Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
• Interface: IOM-2, PCM
• Number of Circuits: 2
• Voltage - Supply: 3.3V
• Current - Supply: 105mA
• Power (Watts): -
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: PG-TQFP-64-1

package: -

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BTG7007A1EPWXUMA1

Infineon Technologies

PROFET

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: Logic
• Voltage - Load: 5V ~ 28V
• Voltage - Supply (Vcc/Vdd): 5V ~ 28V
• Current - Output (Max): 10.3A
• Rds On (Typ): 8Ohm
• Input Type: Non-Inverting
• Features: Slew Rate Controlled
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-TSDSO-14-22

package: -

F4150R12N3H3FB11BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO3B-411

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

CY27410LTXI-025T

Infineon Technologies

INFINEON

• Type: -
• PLL: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Divider/Multiplier: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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ETD630N18P60HPSA1

Infineon Technologies

60 MM THYRISTOR/DIODE MODULE

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 628 A
• Current - On State (It (RMS)) (Max): 700 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 16800A, 20000A
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: 135°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

package: -

CY9AF341LAPMC-G-JNE2

Infineon Technologies

MULTI-MARKET MCUS

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 40MHz
• Connectivity: CSIO, I2C, UART/USART, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 51
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
• Data Converters: A/D 12x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (12x12)

package: -

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IPS105N03LG

Infineon Technologies

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 38W (Tc)
• Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO251-3-11
• Package / Case: TO-251-3 Stub Leads, IPAK

package: -

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TT162N12KOFHPSA1

Infineon Technologies

SCR MODULE 1.2KV 260A MODULE

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1.2 kV
• Current - On State (It (AV)) (Max): 162 A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 150 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

package: -

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IAUA250N04S6N006AUMA1

Infineon Technologies

MOSFET_(20V 40V) PG-HSOF-5

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 450A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
• Vgs(th) (Max) @ Id: 3V @ 145µA
• Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 11064 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 0.64mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HSOF-5-4
• Package / Case: 5-PowerSFN

package: -

D251N18BXPSA1

Infineon Technologies

DIODE GEN PURP 1.8KV 255A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800 V
• Current - Average Rectified (Io): 255A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 180°C

package: -

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TT260N22KOFHPSA1

Infineon Technologies

SCR MODULE 2.2KV 450A MODULE

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 2.2 kV
• Current - On State (It (AV)) (Max): 287 A
• Current - On State (It (RMS)) (Max): 450 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 200 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

package: -

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CY9AF344MAPMC-GNE2

Infineon Technologies

MM MCU

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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XDPS2201DXUMA1

Infineon Technologies

DIGITAL CHARGER/ADAPTER

• Output Type: Transistor Driver
• Function: Step-Up/Step-Down
• Output Configuration: Positive
• Topology: Flyback
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 10V ~ 24V
• Frequency - Switching: 20kHz ~ 250kHz
• Duty Cycle (Max): -
• Synchronous Rectifier: No
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Enable, Phase Control, Soft Start
• Operating Temperature: -25°C ~ 125°C (TJ)
• Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
• Supplier Device Package: PG-DSO-14-66

package: -

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