|
|
Infineon Technologies |
IGBT 330V 28A 43W TO220ABFP
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 330V
- Current - Collector (Ic) (Max): 28A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 28A
- Power - Max: 43W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 39ns/120ns
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
|
package: TO-220-3 |
Voorraad4.864 |
|
|
|
Infineon Technologies |
IGBT 600V 13A 60W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 13A
- Current - Collector Pulsed (Icm): 52A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
- Power - Max: 60W
- Switching Energy: 160µJ (on), 130µJ (off)
- Input Type: Standard
- Gate Charge: 27nC
- Td (on/off) @ 25°C: 39ns/93ns
- Test Condition: 480V, 6.5A, 50 Ohm, 15V
- Reverse Recovery Time (trr): 37ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad3.968 |
|
|
|
Infineon Technologies |
IGBT 1200V 50A COPAK247
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 50A
- Current - Collector Pulsed (Icm): 60A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
- Power - Max: 180W
- Switching Energy: 1.06mJ (on), 620µJ (off)
- Input Type: Standard
- Gate Charge: 85nC
- Td (on/off) @ 25°C: 30ns/160ns
- Test Condition: 600V, 20A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 105ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
|
package: TO-247-3 |
Voorraad5.136 |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 80A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.8V @ 91µA
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 37.5V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad2.032 |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 50A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad4.080 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 20A TSDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerVDFN
|
package: 8-PowerVDFN |
Voorraad4.352 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 1.6A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
|
package: TO-261-4, TO-261AA |
Voorraad5.200 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 10A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad31.440 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 120A D2PAK-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (7-Lead)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
|
package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Voorraad7.696 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 24A PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (5x6)
- Package / Case: 8-PowerVDFN
|
package: 8-PowerVDFN |
Voorraad7.264 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 118µA
- Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad6.512 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 103A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 48V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
|
package: TO-220-3 Full Pack |
Voorraad6.180 |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 14.5A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 95W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad120.012 |
|
|
|
Infineon Technologies |
MOSFET N-CH DUAL 8V 25MA SOT363
- Transistor Type: 2 N-Channel (Dual)
- Frequency: 800MHz
- Gain: 24dB
- Voltage - Test: 5V
- Current Rating: 25mA
- Noise Figure: 1.1dB
- Current - Test: 10mA
- Power - Output: -
- Voltage - Rated: 8V
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
|
package: 6-VSSOP, SC-88, SOT-363 |
Voorraad3.712 |
|
|
|
Infineon Technologies |
IC REG LIN 5V 450MA TO252-5-11
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 42V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 300mA
- Current - Output: 450mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 230µA ~ 25mA
- PSRR: 60dB (100Hz)
- Control Features: Delay, Power Good
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: PG-TO252-5-11
|
package: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Voorraad391.644 |
|
|
|
Infineon Technologies |
IC DRIVER HALF-BRIDGE 600V 8-DIP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 100ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
|
package: 8-DIP (0.300", 7.62mm) |
Voorraad9.528 |
|
|
|
Infineon Technologies |
IC MCU 32BIT 1MB FLASH 144LQFP
- Core Processor: ARM? Cortex?-M4
- Core Size: 32-Bit
- Speed: 120MHz
- Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, SPI, UART, USB
- Peripherals: DMA, I2S, LED, POR, PWM, WDT
- Number of I/O: 91
- Program Memory Size: 1MB (1M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 160K x 8
- Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
- Data Converters: A/D 32x12b, D/A 2x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 144-LQFP Exposed Pad
- Supplier Device Package: 144-LQFP (20x20)
|
package: 144-LQFP Exposed Pad |
Voorraad6.096 |
|
|
|
Infineon Technologies |
IC MCU 16BIT 64KB FLASH 100TQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 40MHz
- Connectivity: EBI/EMI, SPI, UART/USART
- Peripherals: PWM, WDT
- Number of I/O: 79
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 6K x 8
- Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
- Data Converters: A/D 14x8/10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
|
package: 100-LQFP |
Voorraad2.272 |
|
|
|
Infineon Technologies |
IC MMIC 24GHZ TWIN IQ RX 32QFN
- Function: Receiver
- Frequency: 24GHz
- RF Type: General Purpose
- Secondary Attributes: -
- Package / Case: 32-VFQFN Exposed Pad
- Supplier Device Package: 32-VQFN (5.5x4.5)
|
package: 32-VFQFN Exposed Pad |
Voorraad8.964 |
|
|
|
Infineon Technologies |
IC AMP MMIC RF FM RADIO TSNP-7
- Frequency: 10MHz ~ 1GHz
- P1dB: -6dBm
- Gain: 13.5dB
- Noise Figure: 1.2dB
- RF Type: FM
- Voltage - Supply: 3V
- Current - Supply: 2.8mA
- Test Frequency: 100MHz
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: TSNP-7-6
|
package: 6-XFDFN Exposed Pad |
Voorraad4.320 |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 20.2A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 630µ
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 151W (Tc)
- Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
|
package: - |
Voorraad9.558 |
|
|
|
Infineon Technologies |
IC SRAM 8MBIT PARALLEL 48VFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45 ns
- Voltage - Supply: 2.2V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-VFBGA
- Supplier Device Package: 48-VFBGA (6x8)
|
package: - |
Request a Quote |
|
|
|
Infineon Technologies |
LED PX3746HDNSM1401XTMA1
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
package: - |
Request a Quote |
|
|
|
Infineon Technologies |
SIC 1200V 200A AG-HYBRIDD
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 200A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-HYBRIDD-2
|
package: - |
Voorraad30 |
|
|
|
Infineon Technologies |
CIPOS TINY
- Type: IGBT
- Configuration: 3 Phase Inverter
- Current: 6 A
- Voltage: 600 V
- Voltage - Isolation: 2000Vrms
- Package / Case: 26-PowerDIP Module (1.043", 26.50mm)
|
package: - |
Request a Quote |
|
|
|
Infineon Technologies |
TRENCH 40<-<100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 223A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 129µA
- Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-U02
- Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
|
package: - |
Voorraad1.284 |
|
|
|
Infineon Technologies |
FZ1500R33 - INSULATED GATE BIPOL
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
package: - |
Request a Quote |
|
|
|
Infineon Technologies |
IC FLASH 2GBIT SPI/DUAL 24BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 2Gbit
- Memory Interface: SPI - Dual I/O
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: PG-BGA-24-805
|
package: - |
Voorraad270 |
|
|
|
Infineon Technologies |
MULTI-MARKET MCUS
- Core Processor: ARM® Cortex®-M3
- Core Size: 32-Bit
- Speed: 144MHz
- Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
- Peripherals: DMA, LVD, POR, PWM, WDT
- Number of I/O: 103
- Program Memory Size: 512KB (512K x 8)
- Program Memory Type: FLASH
- EEPROM Size: 32K x 8
- RAM Size: 64K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 16x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 120-LQFP
- Supplier Device Package: 120-LQFP (16x16)
|
package: - |
Request a Quote |
|
|
|
Infineon Technologies |
SCR MODULE 1800V 900A MODULE
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1.8 kV
- Current - On State (It (AV)) (Max): 500 A
- Current - On State (It (RMS)) (Max): 900 A
- Voltage - Gate Trigger (Vgt) (Max): 2.2 V
- Current - Gate Trigger (Igt) (Max): 250 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
- Current - Hold (Ih) (Max): 300 mA
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
|
package: - |
Voorraad6 |
|