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Infineon Technologies |
IGBT 1200V ULTRA FAST DIE
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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package: - |
Voorraad6.848 |
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Infineon Technologies |
IGBT 600V 12A 68W TO252-3
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 12A
- Current - Collector Pulsed (Icm): 24A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
- Power - Max: 68W
- Switching Energy: 215µJ
- Input Type: Standard
- Gate Charge: 32nC
- Td (on/off) @ 25°C: 25ns/220ns
- Test Condition: 400V, 6A, 50 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad4.192 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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package: TO-220-3 |
Voorraad2.880 |
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Infineon Technologies |
MOSFET N-CH 75V 120A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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package: TO-220-3 |
Voorraad7.968 |
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Infineon Technologies |
MOSFET N-CH 25V 30A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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package: TO-220-3 |
Voorraad4.784 |
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Infineon Technologies |
MOSFET N-CH 30V 44A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 62W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad6.128 |
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Infineon Technologies |
MOSFET N-CH 100V 36A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
- Rds On (Max) @ Id, Vgs: 44 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad24.000 |
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Infineon Technologies |
MV POWER MOS
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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package: - |
Voorraad7.184 |
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Infineon Technologies |
MOSFET N-CH 600V 10.6A TO262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad2.512 |
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Infineon Technologies |
MOSFET N-CH 40V 50A TO252-3-313
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 17µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 25V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 46W (Tc)
- Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-313
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad6.960 |
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Infineon Technologies |
IC CTRL/REG SYNC BUCK 28-SOIC
- Applications: Controller, Intel Processor
- Voltage - Input: 5V, 12V
- Number of Outputs: 4
- Voltage - Output: 1.08 V ~ 1.85 V
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOIC
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package: 28-SOIC (0.295", 7.50mm Width) |
Voorraad4.544 |
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Infineon Technologies |
IC REG CTRLR DL BUCK PWM 48QFN
- Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
- Voltage - Input: 3.3V
- Number of Outputs: 2
- Voltage - Output: -
- Operating Temperature: -20°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-QFN (7x7)
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package: 48-VFQFN Exposed Pad |
Voorraad160.080 |
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Infineon Technologies |
IC REG LINEAR 3.3V 1A SOT223-4
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 15V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.4V @ 1A
- Current - Output: 1A
- Current - Quiescent (Iq): -
- Current - Supply (Max): 10mA
- PSRR: 65dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Short Circuit
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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package: TO-261-4, TO-261AA |
Voorraad5.536 |
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Infineon Technologies |
IC REG LINEAR 400MA
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 400mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: -
- Supplier Device Package: -
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package: - |
Voorraad5.184 |
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Infineon Technologies |
IC HIGH SIDE PWR SWITCH PDSO-12
- Switch Type: General Purpose
- Number of Outputs: 2
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 4.5 V ~ 28 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 3.5A
- Rds On (Typ): 45 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-12-2
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package: 12-BSOP (0.295", 7.50mm Width) Exposed Pad |
Voorraad2.272 |
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Infineon Technologies |
IC PWM CONTROLLER 8DIP
- Mode: -
- Frequency - Switching: 80kHz
- Current - Startup: 300µA
- Voltage - Supply: 11 V ~ 25 V
- Operating Temperature: -25°C ~ 125°C
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: PG-DIP-8
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package: 8-DIP (0.300", 7.62mm) |
Voorraad5.280 |
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Infineon Technologies |
IC MOSFET DRIVER N-CHAN 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 12 V ~ 18 V
- Logic Voltage - VIL, VIH: 2V, 2.15V
- Current - Peak Output (Source, Sink): 2A, 7A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 18ns, 10ns
- Operating Temperature: -25°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad13.404 |
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Infineon Technologies |
IC TXRX CAN 1MBPS PG-TSON-8
- Type: Transceiver
- Protocol: CAN
- Number of Drivers/Receivers: 1/1
- Duplex: Half
- Receiver Hysteresis: 100mV
- Data Rate: 1Mbps
- Voltage - Supply: 4.75 V ~ 5.25 V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-TDFN Exposed Pad
- Supplier Device Package: PG-TSON-8
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package: 8-TDFN Exposed Pad |
Voorraad3.248 |
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Infineon Technologies |
SENSOR LINEAR ANALOG SSO4
- Type: Linear
- Technology: Hall Effect
- Axis: Single
- Output Type: Analog Voltage
- Sensing Range: 0mT ~ 400mT
- Voltage - Supply: 4.5 V ~ 5.5 V
- Current - Supply (Max): 5.5mA
- Current - Output (Max): 1.2mA
- Resolution: -
- Bandwidth: -
- Operating Temperature: -40°C ~ 150°C (TA)
- Features: Programmable, Temperature Compensated
- Package / Case: 4-SIP, SSO-4-01
- Supplier Device Package: P-SSO-4-1
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package: 4-SIP, SSO-4-01 |
Voorraad2.304 |
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Infineon Technologies |
IC MEMORY CHIP 1KBYTE S-MFCC1-2
- Type: RFID Transponder
- Frequency: 13.56MHz
- Standards: ISO 14443
- Interface: -
- Voltage - Supply: -
- Operating Temperature: -
- Package / Case: MFCC1 Chip Card Module
- Supplier Device Package: P-MCC2-2-1
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package: MFCC1 Chip Card Module |
Voorraad4.086 |
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Infineon Technologies |
IC AMP RF LDMOS 40W DSO-20
- Frequency: 1.8GHz ~ 2.1GHz
- P1dB: -
- Gain: 30dB
- Noise Figure: -
- RF Type: -
- Voltage - Supply: -
- Current - Supply: -
- Test Frequency: -
- Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-20-63
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package: 20-SOIC (0.433", 11.00mm Width) Exposed Pad |
Voorraad6.732 |
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Infineon Technologies |
INFINEON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: HyperFlash
- Memory Size: 512Mbit
- Memory Interface: HyperBus
- Clock Frequency: 100 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 96 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-VFBGA (6x8)
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package: - |
Request a Quote |
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Infineon Technologies |
IC PSOC4 8SOIC
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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package: - |
Request a Quote |
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Infineon Technologies |
SIC 2N-CH 1200V 375A AG-62MM
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
- Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V
- Vgs(th) (Max) @ Id: 5.15V @ 168mA
- Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-62MM
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package: - |
Request a Quote |
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Infineon Technologies |
SCR MODULE 1800V 1750A DO200AB
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 1.8 kV
- Current - On State (It (AV)) (Max): 880 A
- Current - On State (It (RMS)) (Max): 1750 A
- Voltage - Gate Trigger (Vgt) (Max): 2.2 V
- Current - Gate Trigger (Igt) (Max): 250 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
- Current - Hold (Ih) (Max): 300 mA
- Operating Temperature: -40°C ~ 120°C
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
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package: - |
Request a Quote |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 24MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
- Number of I/O: 34
- Program Memory Size: 16KB (16K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 4K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 40-UFQFN Exposed Pad
- Supplier Device Package: 40-QFN (6x6)
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package: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 2.5MB FLASH 176LQFP
- Core Processor: TriCore™
- Core Size: 32-Bit Single-Core
- Speed: 180MHz
- Connectivity: ASC, CANbus, FlexRay, MLI, MSC, SSC
- Peripherals: DMA, POR, WDT
- Number of I/O: 86
- Program Memory Size: 2.5MB (2.5M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 128K x 8
- RAM Size: 176K x 8
- Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V
- Data Converters: A/D 36x10b/12b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 176-LQFP
- Supplier Device Package: PG-LQFP-176-20
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package: - |
Voorraad1.485 |
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Infineon Technologies |
IC MCU 32BIT 1MB FLASH 128TQFP
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
- Core Size: 32-Bit Dual-Core
- Speed: 100MHz, 150MHz
- Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
- Peripherals: Brown-out Detect/Reset, CapSense, I2S, LCD, LVD, POR, PWM, WDT
- Number of I/O: 102
- Program Memory Size: 1MB (1M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 512K x 8
- Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
- Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 128-LQFP
- Supplier Device Package: 128-TQFP (14x20)
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package: - |
Request a Quote |
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Infineon Technologies |
SCR MODULE 2.6KV 800A MODULE
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 2.6 kV
- Current - On State (It (AV)) (Max): 510 A
- Current - On State (It (RMS)) (Max): 800 A
- Voltage - Gate Trigger (Vgt) (Max): 2.2 V
- Current - Gate Trigger (Igt) (Max): 250 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
- Current - Hold (Ih) (Max): 300 mA
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
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package: - |
Request a Quote |
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Infineon Technologies |
IC FLASH 512MBIT SPI/QUAD 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 512Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (6x8)
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package: - |
Request a Quote |
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