Memory

S25FL064P0XNFV000M

Cypress Semiconductor Corp

IC FLASH NOR

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mb (8M x 8)
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 104MHz
• Write Cycle Time - Word, Page: 5µs, 3ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

EDFA164A2PF-JD-F-R TR

Micron Technology Inc.

IC SDRAM 16GBIT 933MHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR3
• Memory Size: 16Gb (256M x 64)
• Memory Interface: Parallel
• Clock Frequency: 933MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

M29W128GL7AZS6E

Micron Technology Inc.

IC FLASH 128MBIT 70NS 64FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (16M x 8, 8M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-FBGA (11x13)

package: 64-LBGA

MT41K256M16HA-125 AIT:E TR

Micron Technology Inc.

IC SDRAM 4GBIT 800MHZ 96FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 4Gb (256M x 16)
• Memory Interface: Parallel
• Clock Frequency: 800MHz
• Write Cycle Time - Word, Page: -
• Access Time: 13.75ns
• Voltage - Supply: 1.283 V ~ 1.45 V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (9x14)

package: 96-TFBGA

CY14B101P-SFXIT

Cypress Semiconductor Corp

IC NVSRAM 1MBIT 40MHZ 16SOIC

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 1Mb (128K x 8)
• Memory Interface: SPI
• Clock Frequency: 40MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

package: 16-SOIC (0.295", 7.50mm Width)

CAT28C16AW-20T

ON Semiconductor

IC EEPROM 16KBIT 200NS 24SOIC

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 16Kb (2K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 10ms
• Access Time: 200ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 24-SOIC

package: 24-SOIC (0.295", 7.50mm Width)

M29W128GL70ZS6E

Micron Technology Inc.

IC FLASH 128MBIT 70NS 64FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (16M x 8, 8M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-FBGA (11x13)

package: 64-LBGA

IDT71V3559SA85BQ8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8.5NS 165CABGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous ZBT
• Memory Size: 4.5Mb (256K x 18)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 8.5ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-TBGA
• Supplier Device Package: 165-CABGA (13x15)

package: 165-TBGA

IS61LV6416-10T-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 10NS 44TSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 1Mb (64K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 10ns
• Access Time: 10ns
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 44-TSOP II

package: 44-TSOP (0.400", 10.16mm Width)

IS42S32400B-6TL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 86TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 128Mb (4M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Supplier Device Package: 86-TSOP II

package: 86-TFSOP (0.400", 10.16mm Width)

CY7C1383D-100AXCT

Cypress Semiconductor Corp

IC SRAM 18MBIT 100MHZ 100LQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 18Mb (1M x 18)
• Memory Interface: Parallel
• Clock Frequency: 100MHz
• Write Cycle Time - Word, Page: -
• Access Time: 8.5ns
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x20)

package: 100-LQFP

MT46V128M4FN-75:D

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 60FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 512Mb (128M x 4)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 750ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-FBGA (10x12.5)

package: 60-TFBGA

CY7C1021CV33-10ZXC

Cypress Semiconductor Corp

IC SRAM 1MBIT 10NS 44TSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 1Mb (64K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 10ns
• Access Time: 10ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 44-TSOP II

package: 44-TSOP (0.400", 10.16mm Width)

DS1250YP-70IND

Maxim Integrated

IC NVSRAM 4MBIT 70NS 34PCM

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 4Mb (512K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 34-PowerCap? Module
• Supplier Device Package: 34-PowerCap Module

package: 34-PowerCap? Module

AT28C64E-12SC

Microchip Technology

IC EEPROM 64KBIT 120NS 28SOIC

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 64Kb (8K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 200µs
• Access Time: 120ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 28-SOIC

package: 28-SOIC (0.295", 7.50mm Width)

MT29F32G08AFACAWP-Z:C

Micron Technology Inc.

IC FLASH 32GBIT TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 32Gb (4G x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

package: 48-TFSOP (0.724", 18.40mm Width)

MX29LV800CBMC-70G

Macronix

IC FLASH 8MBIT 70NS 44SOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 8Mb (1M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-SOIC (0.496", 12.60mm Width)
• Supplier Device Package: 44-SOP

package: 44-SOIC (0.496", 12.60mm Width)

M25P10-AVMN6TP TR

Micron Technology Inc.

IC FLASH 1MBIT 50MHZ 8SO

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 1Mb (128K x 8)
• Memory Interface: SPI
• Clock Frequency: 50MHz
• Write Cycle Time - Word, Page: 15ms, 5ms
• Access Time: -
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

package: 8-SOIC (0.154", 3.90mm Width)

25LC010A-I/ST

Microchip Technology

IC EEPROM 1KBIT 10MHZ 8TSSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 1Kb (128 x 8)
• Memory Interface: SPI
• Clock Frequency: 10MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP

package: 8-TSSOP (0.173", 4.40mm Width)

93LC46A-E/MS

Microchip Technology

IC EEPROM 1KBIT 2MHZ 8MSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 1Kb (128 x 8)
• Memory Interface: SPI
• Clock Frequency: 2MHz
• Write Cycle Time - Word, Page: 6ms
• Access Time: -
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 8-MSOP

package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

SFEM016GB1EA1TO-I-GE-111-STD

Swissbit

INDUSTRIAL EMBEDDED MMC, EM-20,

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 128Gb (16G x 8)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

S26KS512SDABHV030

Cypress Semiconductor Corp

IC FLASH 512MBIT 100MHZ 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 512Mb (64M x 8)
• Memory Interface: Parallel
• Clock Frequency: 100MHz
• Write Cycle Time - Word, Page: -
• Access Time: 96ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

package: 24-VBGA

FT25C08A-USR-T

Fremont Micro Devices USA

IC EEPROM 8KBIT 20MHZ 8SOIC

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 8Kb (1K x 8)
• Memory Interface: SPI
• Clock Frequency: 20MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

package: 8-SOIC (0.154", 3.90mm Width)

AS4C32M16SB-7TIN

Alliance Memory, Inc.

IC SDRAM 512MBIT 143MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: 14ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

package: 54-TSOP (0.400", 10.16mm Width)

S29XS256RABBHW013

Cypress Semiconductor Corp

IC NOR

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

MX25L12865EZNI-10G

Macronix

IC FLASH 128MBIT

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (16M x 8)
• Memory Interface: SPI
• Clock Frequency: 104MHz
• Write Cycle Time - Word, Page: 300µs, 5ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-WSON (8x6)

package: 8-WDFN Exposed Pad

MTFC64GAPALNA-AAT

Micron Technology Inc.

EMMC 512G MMC5.1 J58X AAT

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

7005L15PFI

IDT, Integrated Device Technology Inc

IC SRAM 64K PARALLEL 64TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 64Kb (8K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 15ns
• Access Time: 15ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (14x14)

package: 64-LQFP

MT29F4G16ABAFAWP-ITES:F TR

Micron Technology Inc.

IC FLASH 4G PARALLEL TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 4Gb (256M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

MT40A256M16LY-062E AUT:F

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 4Gb (256M x 16)
• Memory Interface: Parallel
• Clock Frequency: 1.6GHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 19ns
• Voltage - Supply: 1.14V ~ 1.26V
• Operating Temperature: -40°C ~ 125°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (7.5x13.5)

package: 96-TFBGA