Pagina 5 - Microsemi Corporation Producten - Transistoren - Bipolair (BJT) - RF

Onderdeelnummer	Fabrikant	Omschrijving	package	Voorraad	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MS2441	Microsemi Corporation	TRANS RF BIPO 1458W 22A M112 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.5dB Power - Max: 1458W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V Current - Collector (Ic) (Max): 22A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M112 Supplier Device Package: M112	package: M112	Voorraad4.896	65V	1.025GHz ~ 1.15GHz	-	6.5dB	1458W	5 @ 250mA, 5V	22A	200°C (TJ)	Chassis Mount	M112	M112
MSC1175M	Microsemi Corporation	TRANS RF BIPO 400W 12A M218 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 400W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	package: M218	Voorraad2.992	65V	1.025GHz ~ 1.15GHz	-	8dB	400W	15 @ 1A, 5V	12A	250°C (TJ)	Chassis Mount	M218	M218
MS2209	Microsemi Corporation	TRANS RF BIPO 220W 7A M218 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 225MHz Noise Figure (dB Typ @ f): - Gain: 8.4dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V Current - Collector (Ic) (Max): 7A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	package: M218	Voorraad5.776	65V	225MHz	-	8.4dB	220W	20 @ 2A, 5V	7A	200°C (TJ)	Chassis Mount	M218	M218
TPR400	Microsemi Corporation	TRANS RF BIPO 875W 30A 55CX1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 7.27dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 5V Current - Collector (Ic) (Max): 30A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CX Supplier Device Package: 55CX	package: 55CX	Voorraad5.552	55V	1.03GHz ~ 1.09GHz	-	7.27dB	875W	10 @ 2.5A, 5V	30A	200°C (TJ)	Chassis Mount	55CX	55CX
MPA201	Microsemi Corporation	TRANS RF BIPO 6W 300MA 55AU2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 22V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: 13dB Power - Max: 6W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AU Supplier Device Package: 55AU	package: 55AU	Voorraad6.480	22V	2GHz	-	13dB	6W	20 @ 100mA, 5V	300mA	200°C (TJ)	Chassis Mount	55AU	55AU
TAN150	Microsemi Corporation	TRANS RF BIPO 583W 15A 55AT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 583W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AT Supplier Device Package: 55AT	package: 55AT	Voorraad3.248	55V	960MHz ~ 1.215GHz	-	7dB	583W	10 @ 1A, 5V	15A	200°C (TJ)	Chassis Mount	55AT	55AT
MDS140L	Microsemi Corporation	TRANS RF BIPO 500W 12A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 500W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	package: 55AW	Voorraad4.064	70V	1.03GHz ~ 1.09GHz	-	9.5dB	500W	20 @ 1A, 5V	12A	200°C (TJ)	Chassis Mount	55AW	55AW
SD1536-08	Microsemi Corporation	TRANS RF BIPO 292W 10A M105 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8.4dB Power - Max: 292W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V Current - Collector (Ic) (Max): 10A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M105 Supplier Device Package: M105	package: M105	Voorraad3.792	65V	1.025GHz ~ 1.15GHz	-	8.4dB	292W	5 @ 100mA, 5V	10A	200°C (TJ)	Chassis Mount	M105	M105
S200-50	Microsemi Corporation	TRANS RF BIPO 110V 30A 55HX Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 110V Frequency - Transition: 1.5MHz ~ 30MHz Noise Figure (dB Typ @ f): - Gain: 12dB ~ 14.5dB Power - Max: 320W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 30A Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 55HX Supplier Device Package: 55HX	package: 55HX	Voorraad3.280	110V	1.5MHz ~ 30MHz	-	12dB ~ 14.5dB	320W	10 @ 1A, 5V	30A	150°C (TJ)	Chassis Mount	55HX	55HX
MDS150	Microsemi Corporation	TRANS RF BIPO 350W 4A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 350W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	package: 55AW	Voorraad3.888	60V	1.03GHz ~ 1.09GHz	-	10dB	350W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55AW	55AW
23A008	Microsemi Corporation	TRANS RF BIPO 5W 400MA55BT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 22V Frequency - Transition: 3.7GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 9.5dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	package: 55BT	Voorraad7.104	22V	3.7GHz	-	8.5dB ~ 9.5dB	5W	20 @ 100mA, 5V	400mA	200°C (TJ)	Chassis Mount	55BT	55BT
1014-12	Microsemi Corporation	TRANS RF BIPO 39W 5A 55LT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 6.8dB Power - Max: 39W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55LT Supplier Device Package: 55LT	package: 55LT	Voorraad7.008	50V	1GHz ~ 1.4GHz	-	6.8dB	39W	10 @ 200mA, 5V	5A	200°C (TJ)	Chassis Mount	55LT	55LT
MS1582	Microsemi Corporation	TRANS RF BIPO 135W 8A M173 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 135W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M173 Supplier Device Package: M173	package: M173	Voorraad7.360	30V	470MHz ~ 860MHz	-	9dB	135W	10 @ 3A, 5V	8A	200°C (TJ)	Chassis Mount	M173	M173
TAN75A	Microsemi Corporation	TRANS RF BIPO 290W 9A 55AZ1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 8.5dB Power - Max: 290W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15mA, 5V Current - Collector (Ic) (Max): 9A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AZ Supplier Device Package: 55AZ	package: 55AZ	Voorraad7.120	50V	960MHz ~ 1.215GHz	-	8dB ~ 8.5dB	290W	10 @ 15mA, 5V	9A	200°C (TJ)	Chassis Mount	55AZ	55AZ
1014-6A	Microsemi Corporation	TRANS RF BIPO 19W 1A 55LV1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 7.5dB Power - Max: 19W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55LV Supplier Device Package: 55LV	package: 55LV	Voorraad3.856	50V	1GHz ~ 1.4GHz	-	7dB ~ 7.5dB	19W	-	1A	200°C (TJ)	Chassis Mount	55LV	55LV
MS1509	Microsemi Corporation	TRANS RF BIPO 260W 15A M168 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 33V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: 5.5dBi Power - Max: 260W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M168 Supplier Device Package: M168	package: M168	Voorraad4.848	33V	500MHz	-	5.5dBi	260W	20 @ 1mA, 5V	15A	200°C (TJ)	Chassis Mount	M168	M168
0912-45	Microsemi Corporation	TRANS RF BIPO 225W 4.5A 55CT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 9dB Power - Max: 225W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Current - Collector (Ic) (Max): 4.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CT Supplier Device Package: 55CT	package: 55CT	Voorraad3.488	60V	960MHz ~ 1.215GHz	-	8dB ~ 9dB	225W	10 @ 300mA, 5V	4.5A	200°C (TJ)	Chassis Mount	55CT	55CT
MDS70	Microsemi Corporation	TRANS RF BIPO 225W 5A 55CX1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10.3dB ~ 11.65dB Power - Max: 225W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CX Supplier Device Package: 55CX	package: 55CX	Voorraad4.480	65V	1.03GHz ~ 1.09GHz	-	10.3dB ~ 11.65dB	225W	20 @ 500mA, 5V	5A	200°C (TJ)	Chassis Mount	55CX	55CX
2301	Microsemi Corporation	TRANS HBT RF BIPOLAR 55BT Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 2.3GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 5.6W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	package: 55BT	Voorraad1.660.800	45V	2.3GHz	-	8dB	5.6W	10 @ 100mA, 5V	300mA	200°C (TJ)	Chassis Mount	55BT	55BT
TAN15	Microsemi Corporation	TRANS RF BIPO 175W 2A 55LT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 8dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55LT Supplier Device Package: 55LT	package: 55LT	Voorraad4.320	50V	960MHz ~ 1.215GHz	-	7dB ~ 8dB	175W	-	2A	200°C (TJ)	Chassis Mount	55LT	55LT
10A060	Microsemi Corporation	TRANS RF BIPO 21W 3A 55FT-2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 24V Frequency - Transition: 1GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 8.5dB Power - Max: 21W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: 200°C (TJ) Mounting Type: Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	package: 55FT	Voorraad7.984	24V	1GHz	-	8dB ~ 8.5dB	21W	20 @ 400mA, 5V	3A	200°C (TJ)	Stud Mount	55FT	55FT
MS1004	Microsemi Corporation	TRANS RF BIPO 270W 20A TO-220AC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 14.5dB Power - Max: 330W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 6V Current - Collector (Ic) (Max): 40A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M177 Supplier Device Package: M177	package: M177	Voorraad6.848	55V	30MHz	-	14.5dB	330W	15 @ 10A, 6V	40A	200°C (TJ)	Chassis Mount	M177	M177
2304	Microsemi Corporation	TRANS BIPO 20V 4W 55BT Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 2.3GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 10.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Current - Collector (Ic) (Max): 600mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	package: 55BT	Voorraad813.336	45V	2.3GHz	-	8dB	10.2W	10 @ 300mA, 5V	600mA	200°C (TJ)	Chassis Mount	55BT	55BT
23A025	Microsemi Corporation	TRANS RF BIPO 9W 1.2A 55BT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 22V Frequency - Transition: 3.7GHz Noise Figure (dB Typ @ f): - Gain: 6dB ~ 6.3dB Power - Max: 9W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 420mA, 5V Current - Collector (Ic) (Max): 1.2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	package: 55BT	Voorraad2.896	22V	3.7GHz	-	6dB ~ 6.3dB	9W	20 @ 420mA, 5V	1.2A	200°C (TJ)	Chassis Mount	55BT	55BT
0912-7	Microsemi Corporation	TRANS RF BIPO 50W 1A 55CX Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 50W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CX Supplier Device Package: 55CX	package: 55CX	Voorraad7.104	60V	960MHz ~ 1.215GHz	-	8.5dB	50W	10 @ 100mA, 5V	1A	200°C (TJ)	Chassis Mount	55CX	55CX
23A005	Microsemi Corporation	TRANS RF BIPO 3W 400MA 55BT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 22V Frequency - Transition: 4.3GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 9.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	package: 55BT	Voorraad3.392	22V	4.3GHz	-	8.5dB ~ 9.5dB	3W	20 @ 100mA, 5V	400mA	200°C (TJ)	Chassis Mount	55BT	55BT
TPR175	Microsemi Corporation	TRANS RF BIPO 290W 9A 55CX1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 9dB Power - Max: 290W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 20mA, 5V Current - Collector (Ic) (Max): 9A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CX Supplier Device Package: 55CX	package: 55CX	Voorraad2.640	55V	1.03GHz ~ 1.09GHz	-	8dB ~ 9dB	290W	10 @ 20mA, 5V	9A	200°C (TJ)	Chassis Mount	55CX	55CX
MS3022	Microsemi Corporation	TRANS RF BIPO 7W 200MA M210 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 1GHz ~ 2GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 7W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M210 Supplier Device Package: M210	package: M210	Voorraad2.288	45V	1GHz ~ 2GHz	-	7dB	7W	15 @ 100mA, 5V	200mA	200°C (TJ)	Chassis Mount	M210	M210
2A8	Microsemi Corporation	TRANS RF BIPO 5.3W 300MA 55EU2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 21V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 9dB Power - Max: 5.3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 55EU Supplier Device Package: 55EU	package: 55EU	Voorraad2.560	21V	2GHz	-	7dB ~ 9dB	5.3W	20 @ 100mA, 5V	300mA	150°C (TJ)	Chassis Mount	55EU	55EU
1035MP	Microsemi Corporation	TRANS RF BIPO 125W 2.5A 55FW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10dB ~ 10.5dB Power - Max: 125W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55FW-1 Supplier Device Package: 55FW-1	package: 55FW-1	Voorraad7.664	65V	1.025GHz ~ 1.15GHz	-	10dB ~ 10.5dB	125W	20 @ 100mA, 5V	2.5A	200°C (TJ)	Chassis Mount	55FW-1	55FW-1

MS2441

Microsemi Corporation

TRANS RF BIPO 1458W 22A M112

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.5dB
Power - Max: 1458W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V
Current - Collector (Ic) (Max): 22A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M112
Supplier Device Package: M112

package: M112

Voorraad4.896

65V

1.025GHz ~ 1.15GHz

-

6.5dB

1458W

5 @ 250mA, 5V

22A

200°C (TJ)

Chassis Mount

M112

MSC1175M

Microsemi Corporation

TRANS RF BIPO 400W 12A M218

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 400W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 12A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M218
Supplier Device Package: M218

package: M218

Voorraad2.992

65V

1.025GHz ~ 1.15GHz

-

8dB

400W

15 @ 1A, 5V

12A

250°C (TJ)

Chassis Mount

M218

MS2209

Microsemi Corporation

TRANS RF BIPO 220W 7A M218

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 225MHz
Noise Figure (dB Typ @ f): -
Gain: 8.4dB
Power - Max: 220W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V
Current - Collector (Ic) (Max): 7A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M218
Supplier Device Package: M218

package: M218

Voorraad5.776

65V

225MHz

-

8.4dB

220W

20 @ 2A, 5V

7A

200°C (TJ)

Chassis Mount

M218

TPR400

Microsemi Corporation

TRANS RF BIPO 875W 30A 55CX1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 7.27dB
Power - Max: 875W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 5V
Current - Collector (Ic) (Max): 30A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CX
Supplier Device Package: 55CX

package: 55CX

Voorraad5.552

55V

1.03GHz ~ 1.09GHz

-

7.27dB

875W

10 @ 2.5A, 5V

30A

200°C (TJ)

Chassis Mount

55CX

MPA201

Microsemi Corporation

TRANS RF BIPO 6W 300MA 55AU2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 22V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: 13dB
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AU
Supplier Device Package: 55AU

package: 55AU

Voorraad6.480

22V

2GHz

-

13dB

6W

20 @ 100mA, 5V

300mA

200°C (TJ)

Chassis Mount

55AU

TAN150

Microsemi Corporation

TRANS RF BIPO 583W 15A 55AT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 583W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 15A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AT
Supplier Device Package: 55AT

package: 55AT

Voorraad3.248

55V

960MHz ~ 1.215GHz

-

7dB

583W

10 @ 1A, 5V

15A

200°C (TJ)

Chassis Mount

55AT

MDS140L

Microsemi Corporation

TRANS RF BIPO 500W 12A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 9.5dB
Power - Max: 500W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 12A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

package: 55AW

Voorraad4.064

70V

1.03GHz ~ 1.09GHz

-

9.5dB

500W

20 @ 1A, 5V

12A

200°C (TJ)

Chassis Mount

55AW

SD1536-08

Microsemi Corporation

TRANS RF BIPO 292W 10A M105

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 8.4dB
Power - Max: 292W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V
Current - Collector (Ic) (Max): 10A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M105
Supplier Device Package: M105

package: M105

Voorraad3.792

65V

1.025GHz ~ 1.15GHz

-

8.4dB

292W

5 @ 100mA, 5V

10A

200°C (TJ)

Chassis Mount

M105

S200-50

Microsemi Corporation

TRANS RF BIPO 110V 30A 55HX

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 110V
Frequency - Transition: 1.5MHz ~ 30MHz
Noise Figure (dB Typ @ f): -
Gain: 12dB ~ 14.5dB
Power - Max: 320W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 30A
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55HX
Supplier Device Package: 55HX

package: 55HX

Voorraad3.280

110V

1.5MHz ~ 30MHz

-

12dB ~ 14.5dB

320W

10 @ 1A, 5V

30A

150°C (TJ)

Chassis Mount

55HX

MDS150

Microsemi Corporation

TRANS RF BIPO 350W 4A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 350W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

package: 55AW

Voorraad3.888

60V

1.03GHz ~ 1.09GHz

-

10dB

350W

20 @ 500mA, 5V

4A

200°C (TJ)

Chassis Mount

55AW

23A008

Microsemi Corporation

TRANS RF BIPO 5W 400MA55BT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 22V
Frequency - Transition: 3.7GHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB ~ 9.5dB
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55BT
Supplier Device Package: 55BT

package: 55BT

Voorraad7.104

22V

3.7GHz

-

8.5dB ~ 9.5dB

5W

20 @ 100mA, 5V

400mA

200°C (TJ)

Chassis Mount

55BT

1014-12

Microsemi Corporation

TRANS RF BIPO 39W 5A 55LT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 6.8dB
Power - Max: 39W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector (Ic) (Max): 5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55LT
Supplier Device Package: 55LT

package: 55LT

Voorraad7.008

50V

1GHz ~ 1.4GHz

-

6.8dB

39W

10 @ 200mA, 5V

5A

200°C (TJ)

Chassis Mount

55LT

MS1582

Microsemi Corporation

TRANS RF BIPO 135W 8A M173

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 135W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M173
Supplier Device Package: M173

package: M173

Voorraad7.360

30V

470MHz ~ 860MHz

-

9dB

135W

10 @ 3A, 5V

8A

200°C (TJ)

Chassis Mount

M173

TAN75A

Microsemi Corporation

TRANS RF BIPO 290W 9A 55AZ1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 8.5dB
Power - Max: 290W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15mA, 5V
Current - Collector (Ic) (Max): 9A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AZ
Supplier Device Package: 55AZ

package: 55AZ

Voorraad7.120

50V

960MHz ~ 1.215GHz

-

8dB ~ 8.5dB

290W

10 @ 15mA, 5V

9A

200°C (TJ)

Chassis Mount

55AZ

1014-6A

Microsemi Corporation

TRANS RF BIPO 19W 1A 55LV1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 7.5dB
Power - Max: 19W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55LV
Supplier Device Package: 55LV

package: 55LV

Voorraad3.856

50V

1GHz ~ 1.4GHz

-

7dB ~ 7.5dB

19W

-

1A

200°C (TJ)

Chassis Mount

55LV

MS1509

Microsemi Corporation

TRANS RF BIPO 260W 15A M168

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 33V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: 5.5dBi
Power - Max: 260W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 5V
Current - Collector (Ic) (Max): 15A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M168
Supplier Device Package: M168

package: M168

Voorraad4.848

33V

500MHz

-

5.5dBi

260W

20 @ 1mA, 5V

15A

200°C (TJ)

Chassis Mount

M168

0912-45

Microsemi Corporation

TRANS RF BIPO 225W 4.5A 55CT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 9dB
Power - Max: 225W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Current - Collector (Ic) (Max): 4.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CT
Supplier Device Package: 55CT

package: 55CT

Voorraad3.488

60V

960MHz ~ 1.215GHz

-

8dB ~ 9dB

225W

10 @ 300mA, 5V

4.5A

200°C (TJ)

Chassis Mount

55CT

MDS70

Microsemi Corporation

TRANS RF BIPO 225W 5A 55CX1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 10.3dB ~ 11.65dB
Power - Max: 225W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CX
Supplier Device Package: 55CX

package: 55CX

Voorraad4.480

65V

1.03GHz ~ 1.09GHz

-

10.3dB ~ 11.65dB

225W

20 @ 500mA, 5V

5A

200°C (TJ)

Chassis Mount

55CX

2301

Microsemi Corporation

TRANS HBT RF BIPOLAR 55BT

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 2.3GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 5.6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55BT
Supplier Device Package: 55BT

package: 55BT

Voorraad1.660.800

45V

2.3GHz

-

8dB

5.6W

10 @ 100mA, 5V

300mA

200°C (TJ)

Chassis Mount

55BT

TAN15

Microsemi Corporation

TRANS RF BIPO 175W 2A 55LT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 8dB
Power - Max: 175W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 2A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55LT
Supplier Device Package: 55LT

package: 55LT

Voorraad4.320

50V

960MHz ~ 1.215GHz

-

7dB ~ 8dB

175W

-

2A

200°C (TJ)

Chassis Mount

55LT

10A060

Microsemi Corporation

TRANS RF BIPO 21W 3A 55FT-2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 24V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 8.5dB
Power - Max: 21W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 5V
Current - Collector (Ic) (Max): 3A
Operating Temperature: 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

package: 55FT

Voorraad7.984

24V

1GHz

-

8dB ~ 8.5dB

21W

20 @ 400mA, 5V

3A

200°C (TJ)

Stud Mount

55FT

MS1004

Microsemi Corporation

TRANS RF BIPO 270W 20A TO-220AC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 14.5dB
Power - Max: 330W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 6V
Current - Collector (Ic) (Max): 40A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M177
Supplier Device Package: M177

package: M177

Voorraad6.848

55V

30MHz

-

14.5dB

330W

15 @ 10A, 6V

40A

200°C (TJ)

Chassis Mount

M177

2304

Microsemi Corporation

TRANS BIPO 20V 4W 55BT

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 2.3GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 10.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Current - Collector (Ic) (Max): 600mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55BT
Supplier Device Package: 55BT

package: 55BT

Voorraad813.336

45V

2.3GHz

-

8dB

10.2W

10 @ 300mA, 5V

600mA

200°C (TJ)

Chassis Mount

55BT

23A025

Microsemi Corporation

TRANS RF BIPO 9W 1.2A 55BT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 22V
Frequency - Transition: 3.7GHz
Noise Figure (dB Typ @ f): -
Gain: 6dB ~ 6.3dB
Power - Max: 9W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 420mA, 5V
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55BT
Supplier Device Package: 55BT

package: 55BT

Voorraad2.896

22V

3.7GHz

-

6dB ~ 6.3dB

9W

20 @ 420mA, 5V

1.2A

200°C (TJ)

Chassis Mount

55BT

0912-7

Microsemi Corporation

TRANS RF BIPO 50W 1A 55CX

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB
Power - Max: 50W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CX
Supplier Device Package: 55CX

package: 55CX

Voorraad7.104

60V

960MHz ~ 1.215GHz

-

8.5dB

50W

10 @ 100mA, 5V

1A

200°C (TJ)

Chassis Mount

55CX

23A005

Microsemi Corporation

TRANS RF BIPO 3W 400MA 55BT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 22V
Frequency - Transition: 4.3GHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB ~ 9.5dB
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55BT
Supplier Device Package: 55BT

package: 55BT

Voorraad3.392

22V

4.3GHz

-

8.5dB ~ 9.5dB

3W

20 @ 100mA, 5V

400mA

200°C (TJ)

Chassis Mount

55BT

TPR175

Microsemi Corporation

TRANS RF BIPO 290W 9A 55CX1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 9dB
Power - Max: 290W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 20mA, 5V
Current - Collector (Ic) (Max): 9A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CX
Supplier Device Package: 55CX

package: 55CX

Voorraad2.640

55V

1.03GHz ~ 1.09GHz

-

8dB ~ 9dB

290W

10 @ 20mA, 5V

9A

200°C (TJ)

Chassis Mount

55CX

MS3022

Microsemi Corporation

TRANS RF BIPO 7W 200MA M210

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 1GHz ~ 2GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 7W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M210
Supplier Device Package: M210

package: M210

Voorraad2.288

45V

1GHz ~ 2GHz

-

7dB

7W

15 @ 100mA, 5V

200mA

200°C (TJ)

Chassis Mount

M210

2A8

Microsemi Corporation

TRANS RF BIPO 5.3W 300MA 55EU2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 21V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 9dB
Power - Max: 5.3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55EU
Supplier Device Package: 55EU

package: 55EU

Voorraad2.560

21V

2GHz

-

7dB ~ 9dB

5.3W

20 @ 100mA, 5V

300mA

150°C (TJ)

Chassis Mount

55EU

1035MP

Microsemi Corporation

TRANS RF BIPO 125W 2.5A 55FW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB ~ 10.5dB
Power - Max: 125W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 2.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55FW-1
Supplier Device Package: 55FW-1

package: 55FW-1

Voorraad7.664

65V

1.025GHz ~ 1.15GHz

-

10dB ~ 10.5dB

125W

20 @ 100mA, 5V

2.5A

200°C (TJ)

Chassis Mount

55FW-1