Microsemi Corporation Producten

JAN2N5157

Microsemi Corporation

TRANS NPN 500V 3.5A TO3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3.5A
• Voltage - Collector Emitter Breakdown (Max): 500V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 700mA, 3.5A
• Current - Collector Cutoff (Max): 250µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V
• Power - Max: 5W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-204AA (TO-3)

package: TO-204AA, TO-3

1N4131 (DO35)

Microsemi Corporation

DIODE ZENER 75V 400MW DO35

• Voltage - Zener (Nom) (Vz): 75V
• Tolerance: ±5%
• Power - Max: 400mW
• Impedance (Max) (Zzt): 700 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 57V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

package: DO-204AH, DO-35, Axial

1N5375C/TR8

Microsemi Corporation

DIODE ZENER 82V 5W T18

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 64 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 59V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

package: T-18, Axial

JAN1N4615DUR-1

Microsemi Corporation

DIODE ZENER 2.0V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 2V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 1250 Ohms
• Current - Reverse Leakage @ Vr: 2.5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA

package: DO-213AA

JANTXV1N978D-1

Microsemi Corporation

DIODE ZENER 51V 500MW DO35

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 125 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 39V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

package: DO-204AH, DO-35, Axial

JANTXV1N984C-1

Microsemi Corporation

DIODE ZENER 91V 500MW DO35

• Voltage - Zener (Nom) (Vz): 91V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 400 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 69V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

package: DO-204AH, DO-35, Axial

1N979B

Microsemi Corporation

DIODE ZENER 56V 500MW DO7

• Voltage - Zener (Nom) (Vz): 56V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 150 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 42.6V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AA, DO-7, Axial
• Supplier Device Package: DO-7

package: DO-204AA, DO-7, Axial

1N6002B

Microsemi Corporation

DIODE ZENER 12V 500MW DO35

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 22 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

package: DO-204AH, DO-35, Axial

1PMT5954B/TR7

Microsemi Corporation

DIODE ZENER 160V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 160V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 700 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 121.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

package: DO-216AA

1PMT5950B/TR13

Microsemi Corporation

DIODE ZENER 110V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 110V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 83.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

package: DO-216AA

1N4763CE3/TR13

Microsemi Corporation

DIODE ZENER 91V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 91V
• Tolerance: ±2%
• Power - Max: 1W
• Impedance (Max) (Zzt): 250 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 69.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

2EZ91D5E3/TR8

Microsemi Corporation

DIODE ZENER 91V 2W DO204AL

• Voltage - Zener (Nom) (Vz): 91V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 125 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 69.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

1PMT5945CE3/TR7

Microsemi Corporation

DIODE ZENER 68V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±2%
• Power - Max: 3W
• Impedance (Max) (Zzt): 120 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 51.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

package: DO-216AA

1N5620US

Microsemi Corporation

DIODE GEN PURP 800V 1A D5A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 500nA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: D-5A
• Operating Temperature - Junction: -65°C ~ 200°C

package: SQ-MELF, A

MSAD60-16

Microsemi Corporation

DIODE MODULE 1.6KV 60A D1

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 1600V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: D1
• Supplier Device Package: D1

package: D1

MSD200-16

Microsemi Corporation

DIODE BRIDGE 1600V 200A SM3

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1600V
• Current - Average Rectified (Io): 200A
• Voltage - Forward (Vf) (Max) @ If: 1.55V @ 300A
• Current - Reverse Leakage @ Vr: 300µA @ 1600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M3
• Supplier Device Package: M3

package: M3

MSD50-08

Microsemi Corporation

DIODE BRIDGE 3PH 800V 50A SM1

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
• Current - Reverse Leakage @ Vr: 200µA @ 800V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: M1
• Supplier Device Package: MSD

package: M1

A54SX16A-FG144A

Microsemi Corporation

IC FPGA 111 I/O 144FBGA

• Number of LABs/CLBs: 1452
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 111
• Number of Gates: 24000
• Voltage - Supply: 2.25 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 144-LBGA
• Supplier Device Package: 144-FPBGA (13x13)

package: 144-LBGA

A54SX32A-FG144

Microsemi Corporation

IC FPGA 111 I/O 144FBGA

• Number of LABs/CLBs: 2880
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 111
• Number of Gates: 48000
• Voltage - Supply: 2.25 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 144-LBGA
• Supplier Device Package: 144-FPBGA (13x13)

package: 144-LBGA

A1440A-VQ100C

Microsemi Corporation

IC FPGA 83 I/O 100VQFP

• Number of LABs/CLBs: 564
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 83
• Number of Gates: 4000
• Voltage - Supply: 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 100-TQFP
• Supplier Device Package: 100-VQFP (14x14)

package: 100-TQFP

APA450-PQ208A

Microsemi Corporation

IC FPGA 158 I/O 208QFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 110592
• Number of I/O: 158
• Number of Gates: 450000
• Voltage - Supply: 2.375 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 125°C (TJ)
• Package / Case: 208-BFQFP
• Supplier Device Package: 208-PQFP (28x28)

package: 208-BFQFP

M2GL150TS-FCV484

Microsemi Corporation

IC FPGA 248 I/O 484VFBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 146124
• Total RAM Bits: 5120000
• Number of I/O: 248
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 484-BFBGA
• Supplier Device Package: 484-BGA

package: 484-BFBGA

JANTXV1N6126

Microsemi Corporation

TVS DIODE 51.7VWM BPKG AXIAL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 51.7V
• Voltage - Breakdown (Min): 61.37V
• Voltage - Clamping (Max) @ Ipp: 101.96V
• Current - Peak Pulse (10/1000µs): 4.85A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: B, Axial
• Supplier Device Package: Axial

package: B, Axial

MA15KP200CA

Microsemi Corporation

TVS DIODE 200VWM 322VC DO204AR

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 200V
• Voltage - Breakdown (Min): 222V
• Voltage - Clamping (Max) @ Ipp: 322V
• Current - Peak Pulse (10/1000µs): 47A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: DO-204AR

package: DO-204AR, Axial

P6KE100CAE3/TR13

Microsemi Corporation

TVS DIODE 85.5VWM 137VC AXIAL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 85.5V
• Voltage - Breakdown (Min): 95V
• Voltage - Clamping (Max) @ Ipp: 137V
• Current - Peak Pulse (10/1000µs): 4.4A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: Axial

package: T-18, Axial

MXPLAD30KP350A

Microsemi Corporation

TVS DIODE 350VWM 564VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 350V
• Voltage - Breakdown (Min): 389V
• Voltage - Clamping (Max) @ Ipp: 564V
• Current - Peak Pulse (10/1000µs): 53A
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

package: Nonstandard SMD

MXPLAD15KP150A

Microsemi Corporation

TVS DIODE 150VWM 243VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 150V
• Voltage - Breakdown (Min): 167V
• Voltage - Clamping (Max) @ Ipp: 243V
• Current - Peak Pulse (10/1000µs): 62A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

package: Nonstandard SMD

MXL1.5KE36A

Microsemi Corporation

TVS DIODE 30.8VWM 49.9VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 30.8V
• Voltage - Breakdown (Min): 34.2V
• Voltage - Clamping (Max) @ Ipp: 49.9V
• Current - Peak Pulse (10/1000µs): 30A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

package: DO-201AA, DO-27, Axial

MSMBG7.5AE3

Microsemi Corporation

TVS DIODE 7.5VWM 12.9VC DO215AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 7.5V
• Voltage - Breakdown (Min): 8.33V
• Voltage - Clamping (Max) @ Ipp: 12.9V
• Current - Peak Pulse (10/1000µs): 46.5A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

package: DO-215AA, SMB Gull Wing

SMDA03C-4E3/TR13

Microsemi Corporation

TVS DIODE 3.3VWM 9VC 8SOIC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 4
• Voltage - Reverse Standoff (Typ): 3.3V
• Voltage - Breakdown (Min): 4V
• Voltage - Clamping (Max) @ Ipp: 9V
• Current - Peak Pulse (10/1000µs): 5A (8/20µs)
• Power - Peak Pulse: 300W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 300pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

package: 8-SOIC (0.154", 3.90mm Width)