Pagina 3 - Renesas Electronics America Producten - Transistors - FET's, MOSFET's - Single | Heisener Electronics
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Renesas Electronics America Producten - Transistors - FET's, MOSFET's - Single

Archief 341
Pagina  3/12
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot HAT2171H-EL-E
Renesas Electronics America

MOSFET N-CH 40V 40A 5LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad97.800
MOSFET (Metal Oxide)
40V
40A (Ta)
7V, 10V
-
52nC @ 10V
3750pF @ 10V
±20V
-
25W (Tc)
4.8 mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
H5N2522LSTL-E
Renesas Electronics America

MOSFET N-CH 250V 20A LDPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-LDPAK
  • Package / Case: SC-83
package: SC-83
Voorraad4.544
MOSFET (Metal Oxide)
250V
20A (Ta)
10V
-
47nC @ 10V
1300pF @ 25V
±30V
-
75W (Tc)
180 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
4-LDPAK
SC-83
hot HAT2160H-EL-E
Renesas Electronics America

MOSFET N-CH 20V 60A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 7750pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad30.960
MOSFET (Metal Oxide)
20V
60A (Ta)
4.5V, 10V
2.3V @ 1mA
54nC @ 4.5V
7750pF @ 10V
±20V
-
30W (Tc)
2.6 mOhm @ 30A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
HAT2279H-EL-E
Renesas Electronics America

MOSFET N-CH 80V 30A 5LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3520pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad6.656
MOSFET (Metal Oxide)
80V
30A (Ta)
4.5V, 10V
-
60nC @ 10V
3520pF @ 10V
±20V
-
25W (Tc)
12 mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
hot HAT2165H-EL-E
Renesas Electronics America

MOSFET N-CH 30V 55A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5180pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 27.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad274.104
MOSFET (Metal Oxide)
30V
55A (Ta)
4.5V, 10V
2.5V @ 1mA
33nC @ 4.5V
5180pF @ 10V
±20V
-
30W (Tc)
3.3 mOhm @ 27.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
RJK1576DPA-00#J5A
Renesas Electronics America

MOSFET N-CH 150V WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WPAK(3F) (5x6)
  • Package / Case: 8-PowerVDFN
package: 8-PowerVDFN
Voorraad6.368
MOSFET (Metal Oxide)
150V
25A (Ta)
10V
-
19nC @ 10V
1200pF @ 25V
±30V
-
65W (Tc)
58 mOhm @ 12.5A, 10V
150°C (TJ)
Surface Mount
WPAK(3F) (5x6)
8-PowerVDFN
RJK1575DPA-00#J5A
Renesas Electronics America

MOSFET N-CH 150V WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WPAK(3F) (5x6)
  • Package / Case: 8-PowerVDFN
package: 8-PowerVDFN
Voorraad2.672
MOSFET (Metal Oxide)
150V
25A (Ta)
10V
-
37nC @ 10V
2200pF @ 25V
±30V
-
65W (Tc)
48 mOhm @ 12.5A, 10V
150°C (TJ)
Surface Mount
WPAK(3F) (5x6)
8-PowerVDFN
NP82N055PUG-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 82A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 41A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad4.624
MOSFET (Metal Oxide)
55V
82A (Tc)
10V
4V @ 250µA
160nC @ 10V
9600pF @ 25V
±20V
-
1.8W (Ta), 143W (Tc)
5.2 mOhm @ 41A, 10V
175°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RJK6032DPH-E0#T2
Renesas Electronics America

MOSFET N-CH 600V 3A TO251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad7.216
MOSFET (Metal Oxide)
600V
3A (Ta)
10V
-
9nC @ 10V
285pF @ 25V
±30V
-
40.3W (Tc)
4.3 Ohm @ 1.5A, 10V
150°C (TJ)
Through Hole
TO-251
TO-251-3 Short Leads, IPak, TO-251AA
hot RJK2075DPA-00#J5A
Renesas Electronics America

MOSFET N-CH 200V 20A WPAK(3F)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Ta)
  • Rds On (Max) @ Id, Vgs: 69 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WPAK(3F) (5x6)
  • Package / Case: 8-PowerVDFN
package: 8-PowerVDFN
Voorraad12.456
MOSFET (Metal Oxide)
200V
20A (Ta)
10V
-
38nC @ 10V
2200pF @ 25V
±30V
-
65W (Ta)
69 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
WPAK(3F) (5x6)
8-PowerVDFN
hot RJK1056DPB-00#J5
Renesas Electronics America

MOSFET N-CH 100V 25A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad24.744
MOSFET (Metal Oxide)
100V
25A (Ta)
10V
-
41nC @ 10V
3000pF @ 10V
±20V
-
65W (Tc)
14 mOhm @ 12.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
RJK0856DPB-00#J5
Renesas Electronics America

MOSFET N-CH 80V 35A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 17.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad3.232
MOSFET (Metal Oxide)
80V
35A (Ta)
10V
-
40nC @ 10V
3000pF @ 10V
±20V
-
65W (Tc)
8.9 mOhm @ 17.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
RJK0656DPB-00#J5
Renesas Electronics America

MOSFET N-CH 60V 40A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad6.928
MOSFET (Metal Oxide)
60V
40A (Ta)
10V
-
40nC @ 10V
3000pF @ 10V
±20V
-
65W (Tc)
5.6 mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
RJK0456DPB-00#J5
Renesas Electronics America

MOSFET N-CH 40V LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad6.304
MOSFET (Metal Oxide)
40V
50A (Ta)
10V
-
39nC @ 10V
3000pF @ 10V
±20V
-
65W (Tc)
3.2 mOhm @ 25A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
hot HAT2166H-EL-E
Renesas Electronics America

MOSFET N-CH 30V 45A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 22.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad90.000
MOSFET (Metal Oxide)
30V
45A (Ta)
4.5V, 10V
2.5V @ 1mA
27nC @ 4.5V
4400pF @ 10V
±20V
-
25W (Tc)
3.8 mOhm @ 22.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
RJK2076DPA-00#J5A
Renesas Electronics America

MOSFET N-CH 200V 20A WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WPAK(3F) (5x6)
  • Package / Case: 8-PowerVDFN
package: 8-PowerVDFN
Voorraad4.368
MOSFET (Metal Oxide)
200V
20A (Ta)
10V
-
19nC @ 10V
1200pF @ 25V
±30V
-
65W (Tc)
85 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
WPAK(3F) (5x6)
8-PowerVDFN
hot 2SK3484-AZ
Renesas Electronics America

MOSFET N-CH 100V MP-3/TO-251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (MP-3)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad27.264
MOSFET (Metal Oxide)
100V
16A (Tc)
4.5V, 10V
-
20nC @ 10V
900pF @ 10V
±20V
-
1W (Ta), 30W (Tc)
125 mOhm @ 8A, 10V
150°C (TJ)
Through Hole
TO-251 (MP-3)
TO-251-3 Short Leads, IPak, TO-251AA
HAT2261H-EL-E
Renesas Electronics America

MOSFET N-CH 30V 45A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 22.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad2.048
MOSFET (Metal Oxide)
30V
45A (Ta)
4.5V, 10V
-
27nC @ 4.5V
4400pF @ 10V
±20V
-
25W (Tc)
3.8 mOhm @ 22.5A, 10V
150°C (TJ)
Surface Mount
5-LFPAK
SC-100, SOT-669
hot HAT2164H-EL-E
Renesas Electronics America

MOSFET N-CH 30V 60A 5LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad29.928
MOSFET (Metal Oxide)
30V
60A (Ta)
4.5V, 10V
-
50nC @ 4.5V
7600pF @ 10V
±20V
-
30W (Tc)
3.1 mOhm @ 30A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
hot RJK0855DPB-00#J5
Renesas Electronics America

MOSFET N-CH 80V 30A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad7.848
MOSFET (Metal Oxide)
80V
30A (Ta)
10V
-
35nC @ 10V
2550pF @ 10V
±20V
-
60W (Tc)
11 mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
RJK0655DPB-00#J5
Renesas Electronics America

MOSFET N-CH 60V 35A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 17.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad6.768
MOSFET (Metal Oxide)
60V
35A (Ta)
10V
-
35nC @ 10V
2550pF @ 10V
±20V
-
60W (Tc)
6.7 mOhm @ 17.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
RJK0455DPB-00#J5
Renesas Electronics America

MOSFET N-CH 40V 45A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 22.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad7.952
MOSFET (Metal Oxide)
40V
45A (Ta)
10V
-
34nC @ 10V
2550pF @ 10V
±20V
-
60W (Tc)
3.8 mOhm @ 22.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
RJK0301DPB-02#J0
Renesas Electronics America

MOSFET N-CH 30V 60A 5-LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 10V
  • Vgs (Max): +16V, -12V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 30A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad2.448
MOSFET (Metal Oxide)
30V
60A (Ta)
4.5V, 10V
-
32nC @ 4.5V
5000pF @ 10V
+16V, -12V
-
65W (Tc)
2.8 mOhm @ 30A, 10V
150°C (TJ)
Surface Mount
5-LFPAK
SC-100, SOT-669
RJK03M5DNS-00#J5
Renesas Electronics America

MOSFET N-CH 30V 25A HWSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HWSON (3.3x3.3)
  • Package / Case: 8-PowerWDFN
package: 8-PowerWDFN
Voorraad6.976
MOSFET (Metal Oxide)
30V
25A (Ta)
4.5V, 10V
-
10.4nC @ 4.5V
1890pF @ 10V
±20V
-
15W (Tc)
6.3 mOhm @ 12.5A, 10V
150°C (TJ)
Surface Mount
8-HWSON (3.3x3.3)
8-PowerWDFN
hot HAT2266H-EL-E
Renesas Electronics America

MOSFET N-CH 60V 30A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 23W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad7.808
MOSFET (Metal Oxide)
60V
30A (Ta)
4.5V, 10V
2.5V @ 1mA
25nC @ 4.5V
3600pF @ 10V
±20V
-
23W (Tc)
12 mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
RJK0853DPB-00#J5
Renesas Electronics America

MOSFET N-CH 80V 40A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6170pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad6.224
MOSFET (Metal Oxide)
80V
40A (Ta)
4.5V, 10V
-
40nC @ 4.5V
6170pF @ 10V
±20V
-
65W (Tc)
8 mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
RJK0653DPB-00#J5
Renesas Electronics America

MOSFET N-CH 60V 45A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 22.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad6.464
MOSFET (Metal Oxide)
60V
45A (Ta)
4.5V, 10V
2.5V @ 1mA
42nC @ 4.5V
6100pF @ 10V
±20V
-
65W (Tc)
4.8 mOhm @ 22.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
RJK1054DPB-00#J5
Renesas Electronics America

MOSFET N-CH 100V LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad4.048
MOSFET (Metal Oxide)
100V
20A (Ta)
10V
-
27nC @ 10V
2000pF @ 10V
±20V
-
55W (Tc)
22 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
hot NP50P04SDG-E1-AY
Renesas Electronics America

MOSFET P-CH 40V 50A TO-252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 25A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (MP-3ZK)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad64.368
MOSFET (Metal Oxide)
40V
50A (Tc)
4.5V, 10V
2.5V @ 250µA
100nC @ 10V
5000pF @ 10V
±20V
-
1.2W (Ta), 84W (Tc)
9.6 mOhm @ 25A, 10V
175°C (TJ)
Surface Mount
TO-252 (MP-3ZK)
TO-252-3, DPak (2 Leads + Tab), SC-63
N0603N-S23-AY
Renesas Electronics America

MOSFET N-CH 60V 100A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7730pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 50A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
package: TO-262-3 Long Leads, I2Pak, TO-262AA
Voorraad5.392
MOSFET (Metal Oxide)
60V
100A (Ta)
10V
-
133nC @ 10V
7730pF @ 25V
±20V
-
1.5W (Ta), 156W (Tc)
4.6 mOhm @ 50A, 10V
150°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA