Pagina 16 - Rohm Semiconductor Producten - Transistoren - Bipolair (BJT) - Enkelvoudig, Voorvertakkingen | Heisener Electronics
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Rohm Semiconductor Producten - Transistoren - Bipolair (BJT) - Enkelvoudig, Voorvertakkingen

Archief 468
Pagina  16/16
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1) (Ohms)
Resistor - Emitter Base (R2) (Ohms)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
DTB113ESTP
Rohm Semiconductor

TRANS PREBIAS PNP 300MW SPT

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 1k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: SC-72 Formed Leads
  • Supplier Device Package: SPT
package: SC-72 Formed Leads
Voorraad6.528
500mA
50V
1k
1k
33 @ 50mA, 5V
300mV @ 2.5mA, 50mA
500nA
200MHz
300mW
Through Hole
SC-72 Formed Leads
SPT
DTD123TSTP
Rohm Semiconductor

TRANS PREBIAS NPN 300MW SPT

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: SC-72 Formed Leads
  • Supplier Device Package: SPT
package: SC-72 Formed Leads
Voorraad6.928
500mA
40V
2.2k
-
100 @ 50mA, 5V
300mV @ 2.5mA, 50mA
500nA (ICBO)
200MHz
300mW
Through Hole
SC-72 Formed Leads
SPT
DTC114EBT2L
Rohm Semiconductor

TRANS PREBIAS NPN 150MW VMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-923F
  • Supplier Device Package: VMN3
package: SOT-923F
Voorraad6.176
100mA
50V
10k
10k
30 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
150mW
Surface Mount
SOT-923F
VMN3
DTC143ZKAT246
Rohm Semiconductor

TRANS PREBIAS NPN 200MW SMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3
package: TO-236-3, SC-59, SOT-23-3
Voorraad6.752
100mA
50V
4.7k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3
DTC144ESATP
Rohm Semiconductor

TRANS PREBIAS NPN 300MW SPT

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: SC-72 Formed Leads
  • Supplier Device Package: SPT
package: SC-72 Formed Leads
Voorraad7.776
30mA
50V
47k
47k
68 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
300mW
Through Hole
SC-72 Formed Leads
SPT
hot DTC323TUT106
Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: UMT3
package: SC-70, SOT-323
Voorraad48.876
600mA
15V
2.2k
-
100 @ 50mA, 5V
80mV @ 2.5mA, 50mA
500nA (ICBO)
200MHz
200mW
Surface Mount
SC-70, SOT-323
UMT3
hot DTC314TUT106
Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: UMT3
package: SC-70, SOT-323
Voorraad36.000
600mA
15V
10k
-
100 @ 50mA, 5V
80mV @ 2.5mA, 50mA
500nA (ICBO)
200MHz
200mW
Surface Mount
SC-70, SOT-323
UMT3
DTD133HKT146
Rohm Semiconductor

TRANS PREBIAS NPN 200MW SMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 3.3k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3
package: TO-236-3, SC-59, SOT-23-3
Voorraad4.896
500mA
50V
3.3k
10k
56 @ 50mA, 5V
300mV @ 2.5mA, 50mA
500nA
200MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3
DTD114ESTP
Rohm Semiconductor

TRANS PREBIAS NPN 300MW SPT

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: SC-72 Formed Leads
  • Supplier Device Package: SPT
package: SC-72 Formed Leads
Voorraad7.440
500mA
50V
10k
10k
56 @ 50mA, 5V
300mV @ 2.5mA, 50mA
500nA
200MHz
300mW
Through Hole
SC-72 Formed Leads
SPT
DTC363TKT146
Rohm Semiconductor

TRANS PREBIAS NPN 200MW SMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Resistor - Base (R1) (Ohms): 6.8k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3
package: TO-236-3, SC-59, SOT-23-3
Voorraad4.640
600mA
15V
6.8k
-
100 @ 50mA, 5V
80mV @ 2.5mA, 50mA
500nA (ICBO)
200MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3
DTC363EUT106
Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 6.8k
  • Resistor - Emitter Base (R2) (Ohms): 6.8k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: UMT3
package: SC-70, SOT-323
Voorraad7.680
600mA
20V
6.8k
6.8k
70 @ 50mA, 5V
80mV @ 2.5mA, 50mA
500nA
200MHz
200mW
Surface Mount
SC-70, SOT-323
UMT3
DTC144TSATP
Rohm Semiconductor

TRANS PREBIAS NPN 300MW SPT

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: SC-72 Formed Leads
  • Supplier Device Package: SPT
package: SC-72 Formed Leads
Voorraad2.528
100mA
50V
47k
-
100 @ 1mA, 5V
300mV @ 500µA, 5mA
500nA (ICBO)
250MHz
300mW
Through Hole
SC-72 Formed Leads
SPT
DTC143ZSATP
Rohm Semiconductor

TRANS PREBIAS NPN 300MW SPT

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: SC-72 Formed Leads
  • Supplier Device Package: SPT
package: SC-72 Formed Leads
Voorraad7.632
100mA
50V
4.7k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
300mW
Through Hole
SC-72 Formed Leads
SPT
DTC143XSATP
Rohm Semiconductor

TRANS PREBIAS NPN 300MW SPT

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: SC-72 Formed Leads
  • Supplier Device Package: SPT
package: SC-72 Formed Leads
Voorraad3.152
100mA
50V
4.7k
10k
30 @ 10mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
300mW
Through Hole
SC-72 Formed Leads
SPT
DTC143TSATP
Rohm Semiconductor

TRANS PREBIAS NPN 300MW SPT

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: SC-72 Formed Leads
  • Supplier Device Package: SPT
package: SC-72 Formed Leads
Voorraad2.576
100mA
50V
4.7k
-
100 @ 1mA, 5V
300mV @ 250µA, 5mA
500nA (ICBO)
250MHz
300mW
Through Hole
SC-72 Formed Leads
SPT
hot DTC143ESATP
Rohm Semiconductor

TRANS PREBIAS NPN 300MW SPT

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: SC-72 Formed Leads
  • Supplier Device Package: SPT
package: SC-72 Formed Leads
Voorraad420.000
100mA
50V
4.7k
4.7k
30 @ 10mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
300mW
Through Hole
SC-72 Formed Leads
SPT
DTC124ESATP
Rohm Semiconductor

TRANS PREBIAS NPN 300MW SPT

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: SC-72 Formed Leads
  • Supplier Device Package: SPT
package: SC-72 Formed Leads
Voorraad4.080
30mA
50V
22k
22k
56 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
300mW
Through Hole
SC-72 Formed Leads
SPT
DTC123JSATP
Rohm Semiconductor

TRANS PREBIAS NPN 300MW SPT

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: SC-72 Formed Leads
  • Supplier Device Package: SPT
package: SC-72 Formed Leads
Voorraad4.352
100mA
50V
2.2k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
300mW
Through Hole
SC-72 Formed Leads
SPT