Afbeelding |
Onderdeelnummer |
Fabrikant |
Omschrijving |
package |
Voorraad |
Aantal |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor |
MOSFET N-CH 30V 8A TSMT6
|
package: - |
Voorraad4.650 |
|
MOSFET (Metal Oxide) | 30 V | 8A (Ta) | 2.5V, 4.5V | 1.5V @ 2mA | 16.2 nC @ 4.5 V | 1810 pF @ 15 V | ±12V | - | 950mW (Ta) | 16.5mOhm @ 8A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
SICFET N-CH 650V 29A TO263-7
|
package: - |
Voorraad2.757 |
|
SiCFET (Silicon Carbide) | 650 V | 29A (Tc) | - | 5.6V @ 5mA | 48 nC @ 18 V | 571 pF @ 500 V | +22V, -4V | - | 125W | 104mOhm @ 10A, 18V | 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Rohm Semiconductor |
650V 24A TO-247, LOW-NOISE POWER
|
package: - |
Voorraad1.425 |
|
MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 4V @ 750µA | 70 nC @ 10 V | 1650 pF @ 25 V | ±20V | - | 245W (Tc) | 185mOhm @ 11.3A, 10V | 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
NCH 600V 49A, TO-220AB, POWER MO
|
package: - |
Voorraad3.000 |
|
MOSFET (Metal Oxide) | 600 V | 49A (Tc) | 10V, 12V | 6V @ 2.9mA | 65 nC @ 10 V | 2940 pF @ 100 V | ±30V | - | 448W (Tc) | 82mOhm @ 11A, 12V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Rohm Semiconductor |
650V 7A TO-220FM, HIGH-SPEED SWI
|
package: - |
Voorraad2.937 |
|
MOSFET (Metal Oxide) | 650 V | 7A (Ta) | 10V | 5V @ 200µA | 14.5 nC @ 10 V | 470 pF @ 25 V | ±20V | - | 46W (Tc) | 665mOhm @ 2.4A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
||
Rohm Semiconductor |
MOSFET N-CH 60V 2A TSMT3
|
package: - |
Voorraad23.979 |
|
MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 4V, 10V | 2.5V @ 1mA | 2.7 nC @ 5 V | 180 pF @ 10 V | ±20V | - | 700mW (Ta) | 170mOhm @ 2A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 650V 35A TO3
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 5V @ 1.21mA | 72 nC @ 10 V | 3000 pF @ 25 V | ±20V | - | 102W (Tc) | 115mOhm @ 18.1A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
650V 30A TO-247, LOW-NOISE POWER
|
package: - |
Voorraad1.458 |
|
MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 4V @ 960µA | 90 nC @ 10 V | 2100 pF @ 25 V | ±20V | - | 305W (Tc) | 140mOhm @ 14.5A, 10V | 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
750V, 13M, 4-PIN THD, TRENCH-STR
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package: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 750 V | 105A (Tc) | 18V | 4.8V @ 30.8mA | 170 nC @ 18 V | 4580 pF @ 500 V | +21V, -4V | - | 312W | 16.9mOhm @ 58A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Rohm Semiconductor |
MOSFET N-CH 650V 9A LPTS
|
package: - |
Voorraad261 |
|
MOSFET (Metal Oxide) | 650 V | 9A (Tc) | 10V | 5V @ 230µA | 16.5 nC @ 10 V | 540 pF @ 25 V | ±20V | - | 94W (Tc) | 585mOhm @ 2.8A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 45V 2.5A TSMT3
|
package: - |
Voorraad17.631 |
|
MOSFET (Metal Oxide) | 45 V | 2.5A (Ta) | 4V, 10V | 3V @ 1mA | 3.6 nC @ 5 V | 260 pF @ 10 V | ±20V | - | 700mW (Ta) | 100mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 30V 2.5A TSMT3
|
package: - |
Voorraad15.165 |
|
MOSFET (Metal Oxide) | 30 V | 2.5A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 4.6 nC @ 4.5 V | 220 pF @ 10 V | ±12V | - | 700mW (Ta) | 92mOhm @ 2.5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
SICFET N-CH 650V 70A TO263-7
|
package: - |
Voorraad1.311 |
|
SiCFET (Silicon Carbide) | 650 V | 70A (Tc) | - | 5.6V @ 13.3mA | 104 nC @ 18 V | 1526 pF @ 500 V | +22V, -4V | - | 267W | 39mOhm @ 27A, 18V | 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Rohm Semiconductor |
NCH 30V 13A AUTOMOTIVE POWER MOS
|
package: - |
Voorraad6.600 |
|
MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4V, 10V | 2.5V @ 1mA | 35 nC @ 5 V | 2000 pF @ 10 V | ±20V | - | 2W (Ta) | 8.3mOhm @ 13A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Rohm Semiconductor |
200V 45A, NCH, TO-263S, POWER MO
|
package: - |
Voorraad2.970 |
|
MOSFET (Metal Oxide) | 200 V | 45A (Tc) | 10V | 5V @ 1mA | 80 nC @ 10 V | 4200 pF @ 25 V | ±30V | - | 1.56W (Ta), 211W (Tc) | 55mOhm @ 22.5A, 10V | 150°C (TJ) | Surface Mount | TO-263S | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Rohm Semiconductor |
650V 4A TO-252, LOW-NOISE POWER
|
package: - |
Voorraad4.500 |
|
MOSFET (Metal Oxide) | 650 V | 4A (Tc) | 10V | 4V @ 130µA | 15 nC @ 10 V | 220 pF @ 25 V | ±20V | - | 58W (Tc) | 1.05Ohm @ 1.5A, 10V | 150°C | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
NCH 60V 70A, TO-220AB, POWER MO
|
package: - |
Voorraad2.769 |
|
MOSFET (Metal Oxide) | 60 V | 70A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 47 nC @ 10 V | 2950 pF @ 30 V | ±20V | - | 89W (Tc) | 4.6mOhm @ 70A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Rohm Semiconductor |
MOSFET N-CH 650V 20A TO247
|
package: - |
Voorraad1.002 |
|
MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 5V @ 630µA | 40 nC @ 10 V | 1550 pF @ 25 V | ±20V | - | 231W (Tc) | 205mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Rohm Semiconductor |
MOSFET N-CH 30V 2.5A TSMT3
|
package: - |
Voorraad7.248 |
|
MOSFET (Metal Oxide) | 30 V | 2.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 4.1 nC @ 5 V | 165 pF @ 10 V | ±20V | - | 700mW (Ta) | 70mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
||
Rohm Semiconductor |
1200V, 22A, THD, SILICON-CARBIDE
|
package: - |
Voorraad1.320 |
|
SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 18V | 4V @ 2.5mA | 62 nC @ 18 V | 1200 pF @ 800 V | +22V, -6V | - | 165W (Tc) | 208mOhm @ 7A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
||
Rohm Semiconductor |
MOSFET P-CH 30V 2.5A TSMT3
|
package: - |
Voorraad9.378 |
|
MOSFET (Metal Oxide) | 30 V | 2.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 5.4 nC @ 5 V | 460 pF @ 10 V | ±20V | - | 700mW (Ta) | 98mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
||
Rohm Semiconductor |
600V 20A TO-220FM, HIGH-SPEED SW
|
package: - |
Voorraad2.319 |
|
MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 5V @ 1mA | 40 nC @ 10 V | 1550 pF @ 25 V | ±20V | - | 68W (Tc) | 196mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
||
Rohm Semiconductor |
MOSFET N-CH 60V 5A TO252
|
package: - |
Voorraad7.176 |
|
MOSFET (Metal Oxide) | 60 V | 5A (Ta) | 4V, 10V | 3V @ 1mA | 8 nC @ 10 V | 290 pF @ 10 V | ±20V | - | 15W (Ta) | 109mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
MOSFET N-CH 80V 3A TSMT6
|
package: - |
Voorraad17.475 |
|
MOSFET (Metal Oxide) | 80 V | 3A (Ta) | 4V, 10V | 2.5V @ 1mA | 6.5 nC @ 5 V | 550 pF @ 10 V | ±20V | - | 950mW (Ta) | 131mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
||
Rohm Semiconductor |
MOSFET N-CH 30V 28A/80A 8HSOP
|
package: - |
Voorraad2.820 |
|
MOSFET (Metal Oxide) | 30 V | 28A (Ta), 80A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 94 nC @ 10 V | 5100 pF @ 15 V | ±20V | - | 3W (Ta) | 2.3mOhm @ 28A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
||
Rohm Semiconductor |
PCH -60V -56A, HSOP8, POWER MOSF
|
package: - |
Voorraad31.371 |
|
MOSFET (Metal Oxide) | 60 V | 56A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 130 nC @ 10 V | 6900 pF @ 30 V | ±20V | - | 3W (Ta) | 11.3mOhm @ 15A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
||
Rohm Semiconductor |
600V 15A TO-220FM, LOW-NOISE POW
|
package: - |
Voorraad3.000 |
|
MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 4V @ 1mA | 40 nC @ 10 V | 910 pF @ 25 V | ±20V | - | 60W (Tc) | 290mOhm @ 6.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
||
Rohm Semiconductor |
SICFET N-CH 1200V 17A TO263-7
|
package: - |
Voorraad11.775 |
|
SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | - | 5.6V @ 2.5mA | 42 nC @ 18 V | 398 pF @ 800 V | +22V, -4V | - | 100W | 208mOhm @ 5A, 18V | 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |