Afbeelding |
Onderdeelnummer |
Fabrikant |
Omschrijving |
package |
Voorraad |
Aantal |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-220AB
|
package: TO-220-3 |
Voorraad6.036 |
|
MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 3.5V @ 1.2mA | 40nC @ 10V | 2400pF @ 300V | ±30V | - | 180W (Tc) | 125 mOhm @ 7.5A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-247
|
package: TO-247-3 |
Voorraad6.384 |
|
MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | ±30V | - | 165W (Tc) | 175 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220AB
|
package: TO-220-3 |
Voorraad7.548 |
|
MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | ±30V | - | 130W (Tc) | 300 mOhm @ 6.9A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 6.5A TO220-3
|
package: TO-220-3 |
Voorraad9.276 |
|
MOSFET (Metal Oxide) | 800V | 6.5A (Ta) | 10V | 4V @ 280µA | 13nC @ 10V | 700pF @ 300V | ±20V | - | 110W (Tc) | 950 mOhm @ 3.3A, 10V | 150°C | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 80A TO220SIS
|
package: TO-220-3 Full Pack |
Voorraad11.208 |
|
MOSFET (Metal Oxide) | 75V | 80A (Ta) | 10V | 4V @ 1mA | 175nC @ 10V | 8200pF @ 10V | ±20V | - | 45W (Tc) | 4.5 mOhm @ 40A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 9.3A TO-220SIS
|
package: TO-220-3 Full Pack, Isolated Tab |
Voorraad6.432 |
|
MOSFET (Metal Oxide) | 650V | 9.3A (Ta) | 10V | 3.5V @ 350µA | 20nC @ 10V | 700pF @ 300V | ±30V | - | 30W (Tc) | 500 mOhm @ 4.6A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A TO-220SIS
|
package: TO-220-3 Full Pack, Isolated Tab |
Voorraad7.416 |
|
MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 4.5V @ 500µA | 25nC @ 10V | 720pF @ 300V | ±30V | - | 30W (Tc) | 450 mOhm @ 4.9A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
package: TO-220-3 Full Pack |
Voorraad16.392 |
|
MOSFET (Metal Oxide) | 60V | 68A | 4.5V, 10V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | ±20V | - | 36W (Tc) | 7.2 mOhm @ 15A, 4.5V | 175°C (TJ) | Surface Mount | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
package: TO-220-3 |
Voorraad17.868 |
|
MOSFET (Metal Oxide) | 60V | 80A | 4.5V, 10V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | ±20V | - | 87W (Tc) | 7.2 mOhm @ 15A, 4.5V | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 7.8A TO-220SIS
|
package: TO-220-3 Full Pack, Isolated Tab |
Voorraad7.088 |
|
MOSFET (Metal Oxide) | 650V | 7.8A (Ta) | 10V | 3.5V @ 300µA | 16nC @ 10V | 570pF @ 300V | ±30V | - | 30W (Tc) | 650 mOhm @ 3.9A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 8A TO-220SIS
|
package: TO-220-3 Full Pack, Isolated Tab |
Voorraad6.084 |
|
MOSFET (Metal Oxide) | 600V | 8A (Ta) | 10V | 4.5V @ 400µA | 22nC @ 10V | 590pF @ 300V | ±30V | - | 30W (Tc) | 540 mOhm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.8A TO-220SIS
|
package: TO-220-3 Full Pack, Isolated Tab |
Voorraad6.924 |
|
MOSFET (Metal Oxide) | 650V | 5.8A (Ta) | 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | ±30V | - | 30W (Tc) | 1 Ohm @ 2.9A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
package: TO-220-3 |
Voorraad16.980 |
|
MOSFET (Metal Oxide) | 40V | 100A | 4.5V, 10V | 2.4V @ 500µA | 63.4nC @ 10V | 4670pF @ 20V | ±20V | - | 87W (Tc) | 3.8 mOhm @ 30A, 4.5V | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
package: TO-220-3 Full Pack |
Voorraad18.396 |
|
MOSFET (Metal Oxide) | 40V | 82A | 4.5V, 10V | 2.4V @ 500µA | 63.4nC @ 10V | 4670pF @ 20V | ±20V | - | 36W (Tc) | 3.8 mOhm @ 30A, 4.5V | 175°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 6.8A TO-220SIS
|
package: TO-220-3 Full Pack, Isolated Tab |
Voorraad8.076 |
|
MOSFET (Metal Oxide) | 650V | 6.8A (Ta) | 10V | 3.5V @ 250µA | 15nC @ 10V | 490pF @ 300V | ±30V | - | 30W (Tc) | 780 mOhm @ 3.4A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.2A TO-220SIS
|
package: TO-220-3 Full Pack, Isolated Tab |
Voorraad2.100 |
|
MOSFET (Metal Oxide) | 650V | 5.2A (Ta) | 10V | 3.5V @ 170µA | 10.5nC @ 10V | 380pF @ 300V | ±30V | - | 30W (Tc) | 1.2 Ohm @ 2.6A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
package: TO-220-3 Full Pack |
Voorraad15.744 |
|
MOSFET (Metal Oxide) | 60V | 50A | 4.5V, 10V | 2.5V @ 300µA | 28.4nC @ 10V | 1990pF @ 25V | ±20V | - | 36W (Tc) | 11.4 mOhm @ 8A, 4.5V | 175°C (TJ) | Surface Mount | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET TRANSISTOR TO-220SIS PD
|
package: TO-220-3 Full Pack |
Voorraad6.656 |
|
MOSFET (Metal Oxide) | 600V | 11.5A (Tc) | 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | ±30V | - | 35W (Tc) | 290 mOhm @ 5.8A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 7.8A IPAK
|
package: TO-251-3 Stub Leads, IPak |
Voorraad11.808 |
|
MOSFET (Metal Oxide) | 650V | 7.8A (Ta) | 10V | 3.5V @ 300µA | 16nC @ 10V | 570pF @ 300V | ±30V | - | 80W (Tc) | 670 mOhm @ 3.9A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
||
Toshiba Semiconductor and Storage |
MOSFET TRANSISTOR TO-220SIS PD
|
package: TO-220-3 Full Pack |
Voorraad7.764 |
|
MOSFET (Metal Oxide) | 650V | 11.5A (Tc) | 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | ±30V | - | 35W (Tc) | 290 mOhm @ 5.8A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET TRANSISTOR TO-220SIS PD
|
package: TO-220-3 Full Pack |
Voorraad7.536 |
|
MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | ±30V | - | 30W | 560 mOhm @ 3.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET TRANSISTOR TO-220SIS PD
|
package: TO-220-3 Full Pack |
Voorraad6.792 |
|
MOSFET (Metal Oxide) | 600V | 9.7A (Tc) | 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | ±30V | - | 30W | 380 mOhm @ 4.9A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.8A IPAK-OS
|
package: TO-251-3 Stub Leads, IPak |
Voorraad8.172 |
|
MOSFET (Metal Oxide) | 650V | 5.8A (Ta) | 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | ±30V | - | 60W (Tc) | 1.05 Ohm @ 2.9A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
||
Toshiba Semiconductor and Storage |
MOSFET TRANSISTOR TO-220SIS PD
|
package: TO-220-3 Full Pack |
Voorraad7.752 |
|
MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | ±30V | - | 30W | 560 mOhm @ 3.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.2A IPAK
|
package: TO-251-3 Stub Leads, IPak |
Voorraad6.324 |
|
MOSFET (Metal Oxide) | 650V | 5.2A (Ta) | 10V | 3.5V @ 170µA | 10.5nC @ 10V | 380pF @ 300V | ±30V | - | 60W (Tc) | 1.22 Ohm @ 2.6A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 38.8A TO-3P
|
package: TO-3P-3, SC-65-3 |
Voorraad6.072 |
|
MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 3.7V @ 1.9mA | 110nC @ 10V | 4100pF @ 300V | ±30V | Super Junction | 270W (Tc) | 65 mOhm @ 19.4A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8A TO-3P(N)
|
package: TO-3P-3, SC-65-3 |
Voorraad6.564 |
|
MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | ±30V | Super Junction | 230W (Tc) | 88 mOhm @ 15.4A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 35A TO-220
|
package: TO-220-3 Full Pack, Isolated Tab |
Voorraad7.744 |
|
MOSFET (Metal Oxide) | 650V | 35A (Ta) | 10V | 3.5V @ 2.1mA | 100nC @ 10V | 4100pF @ 300V | ±30V | - | 50W (Tc) | 80 mOhm @ 17.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 80V 72A TO-220
|
package: TO-220-3 |
Voorraad6.780 |
|
MOSFET (Metal Oxide) | 80V | 72A (Ta) | 10V | 4V @ 1mA | 81nC @ 10V | 5500pF @ 40V | ±20V | - | 192W (Tc) | 4.3 mOhm @ 36A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 34A TO-220
|
package: TO-220-3 Full Pack, Isolated Tab |
Voorraad5.472 |
|
MOSFET (Metal Oxide) | 100V | 34A (Tc) | 10V | 4V @ 500µA | 38nC @ 10V | 2600pF @ 50V | ±20V | - | 35W (Tc) | 9.5 mOhm @ 17A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |