Pagina 76 - Vishay Siliconix Producten | Heisener Electronics
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Vishay Siliconix Producten

Archief 5.544
Pagina  76/185
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
SST204-E3
Vishay Siliconix

JFET N-CH 25V .7MA SOT-23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
package: TO-236-3, SC-59, SOT-23-3
Voorraad4.160
2N6661JTXL02
Vishay Siliconix

MOSFET N-CH 90V 0.86A TO-205

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can
package: TO-205AD, TO-39-3 Metal Can
Voorraad4.928
hot SUP40N10-30-GE3
Vishay Siliconix

MOSFET N-CH 100V 38.5A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 38.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad119.400
hot SI7440DP-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 12A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
package: PowerPAK? SO-8
Voorraad135.300
hot SI5441DC-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 3.9A 1206-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 1206-8 ChipFET?
  • Package / Case: 8-SMD, Flat Lead
package: 8-SMD, Flat Lead
Voorraad3.896.664
SI4483EDY-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 10A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad3.568
hot SUD08P06-155L-E3
Vishay Siliconix

MOSFET P-CH 60V 8.4A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 155 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad558.192
SI5402BDC-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 4.9A 1206-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 1206-8 ChipFET?
  • Package / Case: 8-SMD, Flat Lead
package: 8-SMD, Flat Lead
Voorraad6.048
IRF1405ZTRR
Vishay Siliconix

MOSFET N-CH 55V 75A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad2.944
IRFZ44RSTRR
Vishay Siliconix

MOSFET N-CH 60V 50A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad3.312
hot IRFP350LC
Vishay Siliconix

MOSFET N-CH 400V 16A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 9.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad119.712
IRF9540STRL
Vishay Siliconix

MOSFET P-CH 100V 19A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad6.528
hot SUP85N03-3M6P-GE3
Vishay Siliconix

MOSFET N-CH 30V 85A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3535pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 78.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad62.268
hot SI7788DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 50A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
package: PowerPAK? SO-8
Voorraad59.856
hot IRLIZ24G
Vishay Siliconix

MOSFET N-CH 60V 14A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
package: TO-220-3 Full Pack, Isolated Tab
Voorraad6.544
SIHB8N50D-GE3
Vishay Siliconix

MOSFET N-CH 500V 8.7A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad2.336
SI4426DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 6.5A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 8.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad2.288
hot SIHB22N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 21A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad13.068
hot IRF620PBF
Vishay Siliconix

MOSFET N-CH 200V 5.2A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad93.288
SQD50P04-09L_GE3
Vishay Siliconix

MOSFET P-CH 40V 50A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6675pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad2.288
hot SIR164DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 50A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
package: PowerPAK? SO-8
Voorraad3.062.820
SISS40DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 36.5A PPAK 1212

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8S (3.3x3.3)
  • Package / Case: 8-PowerVDFN
package: 8-PowerVDFN
Voorraad29.826
SI4542DY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 30V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad3.392
SQJB00EP-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 60V SO8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Power - Max: 48W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
package: PowerPAK? SO-8 Dual
Voorraad6.688
SQJ200EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 20V 20A/60A PPAK SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 20A, 60A
  • Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
  • Power - Max: 27W, 48W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric
package: PowerPAK? SO-8 Dual
Voorraad28.530
hot DG413HSDJ
Vishay Siliconix

IC SWITCH QUAD SPST 16DIP

  • Switch Circuit: SPST - NO/NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 35 Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): 12V
  • Voltage - Supply, Dual (V±): ±5 V ~ 20 V
  • Switch Time (Ton, Toff) (Max): 105ns, 80ns
  • -3db Bandwidth: -
  • Charge Injection: 22pC
  • Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
  • Current - Leakage (IS(off)) (Max): 250pA
  • Crosstalk: -88dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
package: 16-DIP (0.300", 7.62mm)
Voorraad13.020
DG308BDQ
Vishay Siliconix

IC SWITCH QUAD SPST 16TSSOP

  • Switch Circuit: SPST - NO
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 85 Ohm
  • Channel-to-Channel Matching (ΔRon): 1.7 Ohm
  • Voltage - Supply, Single (V+): 4 V ~ 44 V
  • Voltage - Supply, Dual (V±): ±4 V ~ 22 V
  • Switch Time (Ton, Toff) (Max): 200ns, 150ns
  • -3db Bandwidth: -
  • Charge Injection: 1pC
  • Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
  • Current - Leakage (IS(off)) (Max): 500pA
  • Crosstalk: -95dB @ 100kHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-TSSOP
package: 16-TSSOP (0.173", 4.40mm Width)
Voorraad3.056
DG407BDN-E3
Vishay Siliconix

IC MUX CMOS ANLG DUAL 8CH 28PLCC

  • Switch Circuit: -
  • Multiplexer/Demultiplexer Circuit: 8:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 60 Ohm
  • Channel-to-Channel Matching (ΔRon): 3 Ohm
  • Voltage - Supply, Single (V+): 12V
  • Voltage - Supply, Dual (V±): ±5 V ~ 20 V
  • Switch Time (Ton, Toff) (Max): 107ns, 88ns
  • -3db Bandwidth: -
  • Charge Injection: 11pC
  • Channel Capacitance (CS(off), CD(off)): 6pF, 54pF
  • Current - Leakage (IS(off)) (Max): 500pA
  • Crosstalk: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 28-LCC (J-Lead)
  • Supplier Device Package: 28-PLCC (11.51x11.51)
package: 28-LCC (J-Lead)
Voorraad3.760
hot DG408DJ
Vishay Siliconix

IC MUX CMOS ANLG DUAL 8CH 16DIP

  • Switch Circuit: -
  • Multiplexer/Demultiplexer Circuit: 8:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 100 Ohm
  • Channel-to-Channel Matching (ΔRon): 15 Ohm (Max)
  • Voltage - Supply, Single (V+): 12V
  • Voltage - Supply, Dual (V±): ±5 V ~ 20 V
  • Switch Time (Ton, Toff) (Max): 150ns, 150ns
  • -3db Bandwidth: -
  • Charge Injection: 20pC
  • Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
  • Current - Leakage (IS(off)) (Max): 500pA
  • Crosstalk: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
package: 16-DIP (0.300", 7.62mm)
Voorraad46.872
DG612EEQ-T1-GE4
Vishay Siliconix

IC SWITCH QUAD SPST TSSOP16

  • Switch Circuit: SPST - NO
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 115 Ohm
  • Channel-to-Channel Matching (ΔRon): 600 mOhm
  • Voltage - Supply, Single (V+): 3 V ~ 12 V
  • Voltage - Supply, Dual (V±): ±3 V ~ 5 V
  • Switch Time (Ton, Toff) (Max): 50ns, 35ns
  • -3db Bandwidth: 1GHz
  • Charge Injection: 1.4pC
  • Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
  • Current - Leakage (IS(off)) (Max): 100pA
  • Crosstalk: -74dB @ 10MHz
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-TSSOP
package: 16-TSSOP (0.173", 4.40mm Width)
Voorraad2.336