Rohm Semiconductor Producten

R6030KNZ1C9

Rohm Semiconductor

NCH 600V 30A POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 305W (Tc)
• Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

package: TO-247-3

RSS070P05FU6TB

Rohm Semiconductor

MOSFET P-CH 45V 7A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 45V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 47.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 27 mOhm @ 7A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

package: 8-SOIC (0.154", 3.90mm Width)

DTA124EUAT106

Rohm Semiconductor

TRANS PREBIAS PNP 200MW UMT3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: UMT3

package: SC-70, SOT-323

RFV8TJ6SGC9

Rohm Semiconductor

DIODE GEN PURP 600V 8A TO220ACFP

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 2.8V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 45ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: TO-220ACFP
• Operating Temperature - Junction: 150°C (Max)

package: TO-220-2 Full Pack

BD62014FS-E2

Rohm Semiconductor

IC FAN MOTOR CTLR 3PH 24SSOP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (3)
• Interface: Parallel
• Technology: -
• Step Resolution: -
• Applications: Fan Controller
• Current - Output: -
• Voltage - Supply: 10 V ~ 18 V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 110°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-SOP (0.213", 5.40mm Width)
• Supplier Device Package: 24-SSOPA

package: 24-SOP (0.213", 5.40mm Width)

MCR10EZPF4642

Rohm Semiconductor

RES SMD 46.4K OHM 1% 1/8W 0805

• Resistance: 46.4 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 0805 (2012 Metric)

MCR18EZHF2371

Rohm Semiconductor

RES SMD 2.37K OHM 1% 1/4W 1206

• Resistance: 2.37 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 1206 (3216 Metric)

MCR03EZPJ110

Rohm Semiconductor

RES SMD 11 OHM 5% 1/10W 0603

• Resistance: 11 Ohms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

package: 0603 (1608 Metric)

MCR03EZPFX1330

Rohm Semiconductor

RES SMD 133 OHM 1% 1/10W 0603

• Resistance: 133 Ohms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

package: 0603 (1608 Metric)

MCR50JZHJ4R7

Rohm Semiconductor

RES SMD 4.7 OHM 5% 1/2W 2010

• Resistance: 4.7 Ohms
• Tolerance: ±5%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±500ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 2010 (5025 Metric)
• Supplier Device Package: 2010
• Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

package: 2010 (5025 Metric)

ESR25JZPJ565

Rohm Semiconductor

RES SMD 5.6M OHM 5% 1/2W 1210

• Resistance: 5.6 MOhms
• Tolerance: ±5%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 1210 (3225 Metric)

ESR18EZPF12R7

Rohm Semiconductor

RES SMD 12.7 OHM 1% 1/3W 1206

• Resistance: 12.7 Ohms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 1206 (3216 Metric)

ESR03EZPF1R30

Rohm Semiconductor

RES SMD 1.3 OHM 1% 1/4W 0603

• Resistance: 1.3 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

package: 0603 (1608 Metric)

MCR18ERTF2202

Rohm Semiconductor

RES SMD 22K OHM 1% 1/4W 1206

• Resistance: 22 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 1206 (3216 Metric)

KTR10EZPF2001

Rohm Semiconductor

RES SMD 2K OHM 1% 1/8W 0805

• Resistance: 2 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 0805 (2012 Metric)

KTR25JZPF56R0

Rohm Semiconductor

RES SMD 56 OHM 1% 1/3W 1210

• Resistance: 56 Ohms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 1210 (3225 Metric)

KTR10EZPF6342

Rohm Semiconductor

RES SMD 63.4K OHM 1% 1/8W 0805

• Resistance: 63.4 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 0805 (2012 Metric)

MCR01MRTJ510

Rohm Semiconductor

RES SMD 51 OHM 5% 1/16W 0402

• Resistance: 51 Ohms
• Tolerance: ±5%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

package: 0402 (1005 Metric)

ESR18EZPJ244

Rohm Semiconductor

RES SMD 240K OHM 5% 1/3W 1206

• Resistance: 240 kOhms
• Tolerance: ±5%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 1206 (3216 Metric)

BR93G66FJ-3AGTE2

Rohm Semiconductor

MICROWIRE BUS 4KBIT(256X16BIT) E

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 4Kb (256 x 16)
• Memory Interface: SPI
• Clock Frequency: 3MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP-J

package: 8-SOIC (0.154", 3.90mm Width)

BD81A24EFV-ME2

Rohm Semiconductor

4CH WHITE LED DRIVER WITH BUCK-B

• Type: DC DC Controller
• Topology: Step-Down (Buck), Step-Up (Boost)
• Internal Switch(s): No
• Number of Outputs: 4
• Voltage - Supply (Min): 4.5V
• Voltage - Supply (Max): 35V
• Voltage - Output: -
• Current - Output / Channel: 120mA
• Frequency: 200kHz ~ 2.2MHz
• Dimming: PWM
• Applications: Automotive
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
• Supplier Device Package: 28-HTSSOP-B

package: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad

BD1HD500FVM-CTR

Rohm Semiconductor

1CH HIGH-SIDE SWITCH, 4-18V, 500

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): 4 V ~ 18 V
• Current - Output (Max): 3mA
• Rds On (Typ): 500 mOhm
• Input Type: CMOS
• Features: -
• Fault Protection: Over Current, Over Temperature, UVLO
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
• Supplier Device Package: 8-MSOP

package: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)

RBQ10BGE45ATL

Rohm Semiconductor

DIODE ARR SCHOTT 45V 10A TO252GE

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 70 µA @ 45 V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252GE

package: -

RB058RSM10STL1

Rohm Semiconductor

100V 3A, TO-277GE, ULTRA LOW IR

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A
• Operating Temperature - Junction: 175°C

package: -

2SCR563F3TR

Rohm Semiconductor

TRANS NPN 50V 6A HUML2020L3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 6 A
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
• Power - Max: 1 W
• Frequency - Transition: 200MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-UDFN Exposed Pad
• Supplier Device Package: HUML2020L3

package: -

RF201LAM4STR

Rohm Semiconductor

DIODE GEN PURP 400V 1.5A PMDTM

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: PMDTM
• Operating Temperature - Junction: 150°C (Max)

package: -

UMP11NFHTN

Rohm Semiconductor

DIODE ARRAY GP 80V 100MA UMD6

• Diode Configuration: 2 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80 V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4 ns
• Current - Reverse Leakage @ Vr: 100 nA @ 70 V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: UMD6

package: -

UT6JC5TCR

Rohm Semiconductor

MOSFET 2P-CH 60V 2.5A HUML2020L8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
• Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-PowerUDFN
• Supplier Device Package: HUML2020L8

package: -