Infineon OptiMOS 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. The devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements.
Infineon’s BTN8962TA integrated high-current half-bridge for motor-drive applications is part of the NovalithIC family, combining one p-channel high-side MOSFET and one n-channel low-side MOSFET with an integrated driver IC in one package.
Infineon’s IFX54441 wide input range low-noise LDO regulators. The micropower, low-noise, low dropout voltage regulators that are available in compact SMD packages. Each device is capable of supplying an output current of 300mA with a dropout voltage of only 270mV.
Infineon’s compact signal power MOSFETs are in seven industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. The devices are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements.
