Vishay has introduced a new TrenchFET 20V n-channel MOSFET in a chip-scale MICRO FOOT 0.8mm x 0.8mm package with an ultra-thin profile of only 0.357mm.
Vishay Siliconix Si8824EDB is designed to save space, reduce power consumption and expand battery usage in smartphones, tablets, wearables, solid-state drives, and portable medical devices (such as hearing aids), providing the industry's lowest on-resistance for any 20V device 1 square millimeter or <0.7mm square outline.
The Si8824EDB is optimized for use as a load switch, small signal switch, and high-speed switch in power management applications, with extremely low on-resistance: 75mohm at 4.5V, 82mohm at 2.5V, 90mohm at 1.8V, and 1.5 at 1.5V 125mohm V, and 175mohm at 1.2V. These ratings are 25% lower than the closest competitive 20V MOSFET in the same CSP package and 65% lower than the closest competitive 20V device in the 1mm x 0.6mm DFN package. MOSFET's 20 V VDS, ESD protection, down to 1.2V rating and low on-resistance provide a safety margin for lithium-ion battery-powered applications, a perfect combination of gate drive design flexibility and high performance.
The on-resistance surface of Si8824EDB is positively low, only 40mohm-mm², which is 28% lower than the closest competitor 20 V MOSFET in a DFN 1 mm square package-saving space and reducing battery power consumption in mobile applications. The device's low on-resistance means that the voltage drop at DC and pulse peak current is very low, so less power is wasted due to heat. The MOSFET's 2000V integrated ESD protection prevents electrostatic damage caused by operation or human contact.
The company said that samples and mass production batches of Si8824EDB are now available.
